发明申请
- 专利标题： METAL POLISHING SLURRY AND POLISHING METHOD
- 专利标题（中）： 金属抛光浆和抛光方法
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申请号： US12527607申请日： 2008-02-22
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公开(公告)号： US20100120250A1公开(公告)日： 2010-05-13
- 发明人: Jin Amanokura , Takafumi Sakurada , Sou Anzai , Takashi Shinoda , Shigeru Nobe
- 申请人： Jin Amanokura , Takafumi Sakurada , Sou Anzai , Takashi Shinoda , Shigeru Nobe
- 申请人地址： JP Tokyo
- 专利权人： HITACHI CHEMICAL CO., LTD.
- 当前专利权人： HITACHI CHEMICAL CO., LTD.
- 当前专利权人地址： JP Tokyo
- 优先权： JP2007-047007 20070227; JP2007-125840 20070510
- 国际申请： PCT/JP2008/053065 WO 20080222
- 主分类号： H01L21/302
- IPC分类号： H01L21/302 ; H01L21/304 ; H01L21/306 ; C09K13/00 ; C09K13/04 ; C09K13/06
摘要：
The present invention relates to a metal polishing slurry containing abrasive grains, a metal-oxide-dissolving agent, and water, wherein the abrasive grains contain two or more abrasive grain species different from each other in average secondary particle diameter. Using the metal polishing slurry of the present invention, a metal polishing slurry can be obtained which gives a large polishing rate of an interlayer dielectric layer, and is high in the flatness of the polished surface. This metal polishing slurry can provide suitable method for a semiconductor device which is excellent in being made finer and thinner and in dimension precision and in electric characteristics, is high in reliability, and can attain a decrease in costs.
公开/授权文献
- US08821750B2 Metal polishing slurry and polishing method 公开/授权日：2014-09-02
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