发明申请
US20100123224A1 HIGH MECHANICAL STRENGTH ADDITIVES FOR POROUS ULTRA LOW-K MATERIAL
有权
用于多孔超低K材料的高机械强度添加剂
- 专利标题： HIGH MECHANICAL STRENGTH ADDITIVES FOR POROUS ULTRA LOW-K MATERIAL
- 专利标题（中）： 用于多孔超低K材料的高机械强度添加剂
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申请号： US12271617申请日： 2008-11-14
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公开(公告)号： US20100123224A1公开(公告)日： 2010-05-20
- 发明人: Bo-Jiun Lin , Ching-Yu Lo , Hai-Ching Chen , Tien-I Bao , Chen-Hua Yu
- 申请人： Bo-Jiun Lin , Ching-Yu Lo , Hai-Ching Chen , Tien-I Bao , Chen-Hua Yu
- 申请人地址： TW Hsin-Chu
- 专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 当前专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 当前专利权人地址： TW Hsin-Chu
- 主分类号： H01L23/58
- IPC分类号： H01L23/58 ; H01L21/312
摘要：
A semiconductor device and method for making such that provides improved mechanical strength is disclosed. The semiconductor device comprises a semiconductor substrate; an adhesion layer disposed over the semiconductor substrate; and a porous low-k film disposed over the semiconductor substrate, wherein the porous low-k film comprises a porogen and a composite bonding structure including at least one Si—O—Si bonding group and at least one bridging organic functional group.
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