发明申请
- 专利标题： DRY ETCHING METHOD
- 专利标题（中）： 干蚀刻方法
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申请号： US12597645申请日： 2008-05-08
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公开(公告)号： US20100133233A1公开(公告)日： 2010-06-03
- 发明人: Yasuhiro Morikawa , Koukou Suu , Toshio Hayashi , Tadayuki Satou
- 申请人： Yasuhiro Morikawa , Koukou Suu , Toshio Hayashi , Tadayuki Satou
- 优先权： JP2007-127789 20070514
- 国际申请： PCT/JP2008/058534 WO 20080508
- 主分类号： B44C1/22
- IPC分类号： B44C1/22
摘要：
A dry etching method by which a substrate can be dry-etched on both sides without a crack is provided.The dry etching method includes: introducing an etching gas having a fluorocarbon gas and a rare gas into a vacuum chamber; generating plasma in the vacuum chamber having a predetermined pressure; and etching a substrate to be processed adhered on an adhesive surface of a heat-conductive sheet disposed on a substrate table.
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