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公开(公告)号：US20100133233A1
公开(公告)日：2010-06-03
申请号：US12597645
申请日：2008-05-08
申请人： Yasuhiro Morikawa , Koukou Suu , Toshio Hayashi , Tadayuki Satou
发明人： Yasuhiro Morikawa , Koukou Suu , Toshio Hayashi , Tadayuki Satou
IPC分类号： B44C1/22
CPC分类号： H01L21/306 , H01L41/332 , H03H3/02
摘要： A dry etching method by which a substrate can be dry-etched on both sides without a crack is provided.The dry etching method includes: introducing an etching gas having a fluorocarbon gas and a rare gas into a vacuum chamber; generating plasma in the vacuum chamber having a predetermined pressure; and etching a substrate to be processed adhered on an adhesive surface of a heat-conductive sheet disposed on a substrate table.
摘要翻译： 提供了一种干法蚀刻方法，通过该方法可以在两面上进行干蚀刻而不产生裂纹。 干蚀刻方法包括：将具有碳氟化合物气体和稀有气体的蚀刻气体引入真空室; 在具有预定压力的真空室中产生等离子体; 以及将被处理基板附着在设置在基板台上的导热片的粘接面上。
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公开(公告)号：US08153926B2
公开(公告)日：2012-04-10
申请号：US12750877
申请日：2010-03-31
申请人： Yasuhiro Morikawa , Toshio Hayashi , Koukou Suu
发明人： Yasuhiro Morikawa , Toshio Hayashi , Koukou Suu
IPC分类号： B23K10/00
CPC分类号： H01L21/30655 , B81C1/00595 , B81C2201/014 , H01J37/3255 , H01J2237/334
摘要： An etching method and an etching system are adapted to produce a high etch selectivity for a mask, an excellent anisotropic profile and a large etching depth. An etching system according to the invention comprises a floating electrode arranged vis-à-vis a substrate electrode in a vacuum chamber and held in a floating state in terms of electric potential, a material arranged at the side of the floating electrode facing the substrate electrode to form an anti-etching film and a control unit for intermittently applying high frequency power to the floating electrode. An etching method according to the invention uses a material arranged at the side of the floating electrode opposite to the substrate electrode to form an anti-etching film as target and only rare gas as main gas and is adapted to repeat a step of forming a film on the substrate by sputtering by applying high frequency power to the floating electrode and a step of subsequently etching the substrate by suspending the application of high frequency power to the floating electrode and introducing etching gas into the vacuum chamber in a predetermined sequence.
摘要翻译： 蚀刻方法和蚀刻系统适于产生掩模的高蚀刻选择性，优异的各向异性轮廓和大的蚀刻深度。 根据本发明的蚀刻系统包括相对于真空室中的基板电极布置并且在电位方面保持为浮置状态的浮动电极，布置在浮置电极的面向基板电极的一侧的材料 形成抗蚀刻膜和用于间歇地向浮动电极施加高频电力的控制单元。 根据本发明的蚀刻方法使用布置在与基板电极相对的浮动电极侧的材料以形成作为目标的抗蚀刻膜，并且仅将稀有气体作为主要气体，并且适于重复形成膜的步骤 通过向浮动电极施加高频电力而通过溅射在衬底上，以及通过将高频电力施加到浮动电极并以预定顺序将蚀刻气体引入真空室中而随后蚀刻衬底的步骤。
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公开(公告)号：US07728252B2
公开(公告)日：2010-06-01
申请号：US11571600
申请日：2005-06-23
申请人： Yasuhiro Morikawa , Toshio Hayashi , Koukou Suu
发明人： Yasuhiro Morikawa , Toshio Hayashi , Koukou Suu
IPC分类号： B23K10/00
CPC分类号： H01L21/30655 , B81C1/00595 , B81C2201/014 , H01J37/3255 , H01J2237/334
摘要： An etching method and an etching system are adapted to produce a high etch selectivity for a mask, an excellent anisotropic profile and a large etching depth. An etching system according to the invention comprises a floating electrode arranged vis-à-vis a substrate electrode in a vacuum chamber and held in a floating state in terms of electric potential, a material arranged at the side of the floating electrode facing the substrate electrode to form an anti-etching film and a control unit for intermittently applying high frequency power to the floating electrode. An etching method according to the invention uses a material arranged at the side of the floating electrode opposite to the substrate electrode to form an anti-etching film as target and only rare gas as main gas and is adapted to repeat a step of forming a film on the substrate by sputtering by applying high frequency power to the floating electrode and a step of subsequently etching the substrate by suspending the application of high frequency power to the floating electrode and introducing etching gas into the vacuum chamber in a predetermined sequence (FIG. 1).
摘要翻译： 蚀刻方法和蚀刻系统适于产生掩模的高蚀刻选择性，优异的各向异性轮廓和大的蚀刻深度。 根据本发明的蚀刻系统包括相对于真空室中的基板电极布置并且在电位方面保持为浮置状态的浮动电极，布置在浮置电极的面对基板电极的一侧的材料 形成抗蚀刻膜和用于间歇地向浮动电极施加高频电力的控制单元。 根据本发明的蚀刻方法使用布置在与基板电极相对的浮动电极侧的材料以形成作为目标的抗蚀刻膜，并且仅将稀有气体作为主要气体，并且适于重复形成膜的步骤 通过向浮动电极施加高频电力而通过溅射在衬底上，以及通过将浮动电极悬浮施加高频电力并以预定顺序将蚀刻气体引入真空室中，随后蚀刻衬底的步骤（图1 ）。
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公开(公告)号：US20070166844A1
公开(公告)日：2007-07-19
申请号：US11571600
申请日：2005-06-23
申请人： Yasuhiro Morikawa , Toshio Hayashi , Koukou Suu
发明人： Yasuhiro Morikawa , Toshio Hayashi , Koukou Suu
IPC分类号： H01L21/00
CPC分类号： H01L21/30655 , B81C1/00595 , B81C2201/014 , H01J37/3255 , H01J2237/334
摘要： An etching method and an etching system are adapted to produce a high etch selectivity for a mask, an excellent anisotropic profile and a large etching depth. An etching system according to the invention comprises a floating electrode arranged vis-à-vis a substrate electrode in a vacuum chamber and held in a floating state in terms of electric potential, a material arranged at the side of the floating electrode facing the substrate electrode to form an anti-etching film and a control unit for intermittently applying high frequency power to the floating electrode. An etching method according to the invention uses a material arranged at the side of the floating electrode opposite to the substrate electrode to form an anti-etching film as target and only rare gas as main gas and is adapted to repeat a step of forming a film on the substrate by sputtering by applying high frequency power to the floating electrode and a step of subsequently etching the substrate by suspending the application of high frequency power to the floating electrode and introducing etching gas into the vacuum chamber in a predetermined sequence (FIG. 1).
摘要翻译： 蚀刻方法和蚀刻系统适于产生掩模的高蚀刻选择性，优异的各向异性轮廓和大的蚀刻深度。 根据本发明的蚀刻系统包括相对于真空室中的基板电极布置并且在电位方面保持为浮置状态的浮动电极，布置在浮置电极的面向基板电极的一侧的材料 形成抗蚀刻膜和用于间歇地向浮动电极施加高频电力的控制单元。 根据本发明的蚀刻方法使用布置在与基板电极相对的浮动电极侧的材料以形成作为目标的抗蚀刻膜，并且仅将稀有气体作为主要气体，并且适于重复形成膜的步骤 通过向浮动电极施加高频电力而通过溅射在衬底上，并且通过将浮动电极悬浮施加高频电力并以预定顺序将蚀刻气体引入真空室中，随后蚀刻衬底的步骤（图1 ）。
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公开(公告)号：US20100133235A1
公开(公告)日：2010-06-03
申请号：US12597637
申请日：2008-05-08
申请人： Yasuhiro Morikawa , Koukou Suu , Toshio Hayashi
发明人： Yasuhiro Morikawa , Koukou Suu , Toshio Hayashi
CPC分类号： H01J37/3266 , C23C4/00 , C23C4/11 , H01J37/16 , H01J37/321
摘要： A dry etching apparatus having excellent in-plane uniformity and a high etching rate and a dry etching method are provided. A dry etching apparatus includes a vacuum chamber having an upper plasma generation chamber and a lower substrate processing chamber; a magnetic field coil disposed outside a sidewall of the plasma generation chamber; an antenna coil disposed between the magnetic field coil and the outside of the sidewall and connected to a high-frequency power source; and means for introducing an etching gas disposed on top of the plasma generation chamber, wherein the sidewall is formed of a material having a relative dielectric constant of 4 or more.
摘要翻译： 提供了具有优异的面内均匀性和高蚀刻速率的干蚀刻装置以及干蚀刻方法。 干蚀刻装置包括具有上等离子体产生室和下基板处理室的真空室; 设置在所述等离子体产生室的侧壁外侧的磁场线圈; 天线线圈，设置在所述磁场线圈和所述侧壁的外侧之间并连接到高频电源; 以及用于引入设置在等离子体产生室顶部的蚀刻气体的装置，其中所述侧壁由相对介电常数为4以上的材料形成。
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6.发明授权Method for etching organic film, method for fabricating semiconductor device and pattern formation method 失效蚀刻有机膜的方法，制造半导体器件的方法和图案形成方法公开(公告)号：US06828247B2
公开(公告)日：2004-12-07
申请号：US10214754
申请日：2002-08-09
IPC分类号： H01L21302
CPC分类号： H01L21/7681 , H01L21/31138 , H01L21/76804 , H01L21/76831 , Y10S438/905
摘要： An organic film is etched by using plasma generated from an etching gas including a first gas containing, as a principal constituent, a compound including carbon, hydrogen and nitrogen and a second gas including a nitrogen component.
摘要翻译： 通过使用由包括以包含碳，氢和氮的化合物为主要成分的第一气体和包含氮成分的第二气体的蚀刻气体产生的等离子体蚀刻有机膜。
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7.发明申请Semiconductor device and method for manufacturing the same, dry-etching process, method for making electrical connections, and etching apparatus 审中-公开半导体装置及其制造方法，干法蚀刻工艺，电连接方法和蚀刻装置公开(公告)号：US20090102025A1
公开(公告)日：2009-04-23
申请号：US11664091
申请日：2006-04-07
IPC分类号： H01L21/461 , H01L29/10
CPC分类号： H01L29/7833 , H01L21/28061 , H01L21/31116 , H01L21/76802 , H01L29/6659
摘要： A method for manufacturing a semiconductor device comprises dry-etching a thin film using a resist mask carrying patterns in which at least one of the width of each pattern and the space between neighboring two patterns ranges from 32 to 130 nm using a halogenated carbon-containing compound gas with the halogen being at least two members selected from the group consisting of F, I and Br. The ratio of at least one of I and Br is not more than 26% of the total amount of the halogen atoms as expressed in terms of the atomic compositional ratio to transfer the patterns onto the thin film. Such etching of a thin film avoids causing damage to the resist mask used. The resulting thin film carrying the transferred patterns is used as a mask for subjecting the underlying material to dry-etching.
摘要翻译： 一种用于制造半导体器件的方法包括使用具有图案的抗蚀剂掩模对薄膜进行干法蚀刻，其中每个图案的宽度和相邻两个图案之间的空间中的至少一个范围为32至130nm，使用含卤素的 具有卤素的复合气体是选自F，I和Br中的至少两种。 I和Br中的至少一个的比例不超过卤素原子总量的26％，如以将原料组成比转移到薄膜上的原子组成比来表示的。 这种薄膜的蚀刻避免了对所使用的抗蚀剂掩模的损害。 所得到的带有转印图案的薄膜用作对下面的材料进行干蚀刻的掩模。
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公开(公告)号：US08125069B2
公开(公告)日：2012-02-28
申请号：US12830995
申请日：2010-07-06
IPC分类号： H01L23/48
CPC分类号： H01L21/31116 , H01L21/3081 , H01L21/31144 , H01L21/32139
摘要： A method for manufacturing a semiconductor device comprises dry-etching a thin film using a resist mask carrying patterns in which at least one of the width of each pattern and the space between neighboring two patterns ranges from 32 to 130 nm using a halogenated carbon-containing compound gas with the halogen being at least two members selected from the group consisting of F, I and Br. The ratio of at least one of I and Br is not more than 26% of the total amount of the halogen atoms as expressed in terms of the atomic compositional ratio to transfer the patterns onto the thin film. Such etching of a thin film avoids causing damage to the resist mask used. The resulting thin film carrying the transferred patterns is used as a mask for subjecting the underlying material to dry-etching.
摘要翻译： 一种用于制造半导体器件的方法包括使用具有图案的抗蚀剂掩模对薄膜进行干法蚀刻，其中每个图案的宽度和相邻两个图案之间的空间中的至少一个范围为32至130nm，使用含卤素的 具有卤素的复合气体是选自F，I和Br中的至少两种。 I和Br中的至少一个的比例不超过卤素原子总量的26％，如以将原料组成比转移到薄膜上的原子组成比来表示的。 这种薄膜的蚀刻避免了对所使用的抗蚀剂掩模的损害。 所得到的带有转印图案的薄膜用作对下面的材料进行干蚀刻的掩模。
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9.发明授权Method for etching organic film, method for fabricating semiconductor device and pattern formation method 有权蚀刻有机膜的方法，制造半导体器件的方法和图案形成方法公开(公告)号：US06451620B2
公开(公告)日：2002-09-17
申请号：US09854579
申请日：2001-05-15
IPC分类号： H01L2100
CPC分类号： H01L21/7681 , H01L21/31138 , H01L21/76804 , H01L21/76831 , Y10S438/905
摘要： An organic film is etched by using plasma generated from an etching gas including a first gas containing, as a principal constituent, a compound including carbon, hydrogen and nitrogen and a second gas including a nitrogen component.
摘要翻译： 通过使用由包括以包含碳，氢和氮的化合物为主要成分的第一气体和包含氮成分的第二气体的蚀刻气体产生的等离子体蚀刻有机膜。
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公开(公告)号：US08267073B2
公开(公告)日：2012-09-18
申请号：US13137881
申请日：2011-09-20
IPC分类号： F01M13/00
CPC分类号： F02M25/06 , F02D9/1035 , F02M35/02 , F02M35/10032 , F02M35/10137 , F02M35/10144 , F02M35/10222 , F02M35/10268 , Y02T10/121
摘要： A housing has an intake passage extending substantially in a vertical direction of a vehicle. A valve is configured to open and close the intake passage. A shaft supports the valve. A bearing supports the shaft. A hose is connected with an upper side of the housing in the vertical direction and configured to lead intake air into the intake passage. A communication passage configured to communicate an inside of an internal combustion engine of the vehicle with the hose. The communication passage has an opening in the vicinity of a point directly above the bearing. The hose has a wall surface defining a condensate passage, which connects the opening with a target location from which condensate is to be dropped.
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