发明申请
- 专利标题: PROCESS FOR FORMING HIGH RESISTIVITY THIN METALLIC FILM
- 专利标题(中): 形成高电阻薄金属膜的方法
-
申请号: US12326000申请日: 2008-12-01
-
公开(公告)号: US20100136313A1公开(公告)日: 2010-06-03
- 发明人: Akira Shimizu , Akiko Kobayashi , Suvi Haukka
- 申请人: Akira Shimizu , Akiko Kobayashi , Suvi Haukka
- 申请人地址: JP Tama
- 专利权人: ASM JAPAN K.K.
- 当前专利权人: ASM JAPAN K.K.
- 当前专利权人地址: JP Tama
- 主分类号: C23C16/34
- IPC分类号: C23C16/34 ; B32B9/00 ; C01B33/00
摘要:
A process for forming metallic nitride film by atomic layer deposition (ALD), which comprises steps for feeding into a reaction space vapor phase alternated pulses of metal source material and silicon source material in a plurality of cycles, and feeding into the reaction space vapor phase pulses of nitrogen source material. wherein a nitrogen source pulse is fed intermittently in selected cycles such that a ratio of nitrogen source pulses to silicon source pulses is less than 1:1 and a ratio of nitrogen source pulses to metal source pulses is less than 1:1, the ratio selected to produce the thin film with a resistivity between 1,000 μΩcm and 15,000 μΩcm.