摘要:
A process for forming metallic nitride film by atomic layer deposition (ALD), which comprises steps for feeding into a reaction space vapor phase alternated pulses of metal source material and silicon source material in a plurality of cycles, and feeding into the reaction space vapor phase pulses of nitrogen source material. wherein a nitrogen source pulse is fed intermittently in selected cycles such that a ratio of nitrogen source pulses to silicon source pulses is less than 1:1 and a ratio of nitrogen source pulses to metal source pulses is less than 1:1, the ratio selected to produce the thin film with a resistivity between 1,000 μΩcm and 15,000 μΩcm.
摘要:
Atomic layer deposition (ALD) processes for forming thin films comprising GaN are provided. In some embodiments, ALD processes for forming doped GaN thin films are provided. The thin films may find use, for example, in light-emitting diodes.
摘要:
Films are deposited on a substrate by a process in which atomic layer deposition (ALD) is used to deposit one layer of the film and pulsed chemical vapor deposition (CVD) is used to deposit another layer of the film. During the ALD part of the process, a layer is formed by flowing sequential and alternating pulses of mutually reactive reactants that deposit self-limitingly on a substrate. During the pulsed CVD part of the process, another layer is deposited by flowing two CVD reactants into a reaction chamber, with at least a first of the CVD reactants flowed into the reaction chamber in pulses, with those pulses overlapping at least partially with the flow of a second of the CVD reactants. The ALD and CVD parts of the process ca be used to deposit layers with different compositions, thereby forming, e.g., nanolaminate films. Preferably, high quality layers are formed by flowing the second CVD reactant into the reaction chamber for a longer total duration than the first CVD reactant. In some embodiments, the pulses of the third reactant at separated by a duration at least about 1.75 times the length of the pulse. Preferably, less than about 8 monolayers of material are deposited per pulse of the first CVD reactant.
摘要:
A process for producing metal nitride thin films comprising doping the metal nitride thin films by atomic layer deposition (ALD) with silicon or boron or a combination thereof. The work function of metal nitride thin films, which are used in metal electrode applications, can efficiently be tuned.
摘要:
The present method provides tools for growing conformal metal nitride, metal carbide and metal thin films, and nanolaminate structures incorporating these films, from aggressive chemicals. The amount of corrosive chemical compounds, such as hydrogen halides, is reduced during the deposition of transition metal, transition metal carbide and transition metal nitride thin films on various surfaces, such as metals and oxides. Getter compounds protect surfaces sensitive to hydrogen halides and ammonium halides, such as aluminum, copper, silicon oxide and the layers being deposited, against corrosion. Nanolaminate structures (20) incorporating metal nitrides, such as titanium nitride (30) and tungsten nitride (40), and metal carbides, and methods for forming the same, are also disclosed.
摘要:
Atomic layer deposition (ALD) processes for forming thin films comprising GaN are provided. In some embodiments, ALD processes for forming doped GaN thin films are provided. The thin films may find use, for example, in light-emitting diodes.
摘要:
Methods of forming a roughened metal surface on a substrate are provided, along with structures comprising such roughened surfaces. In preferred embodiments roughened surfaces are formed by selectively depositing metal or metal oxide on a substrate surface to form discrete, three-dimensional islands. Selective deposition may be obtained, for example, by modifying process conditions to cause metal agglomeration or by treating the substrate surface to provide a limited number of discontinuous reactive sites. The roughened metal surface may be used, for example, in the manufacture of integrated circuits.
摘要:
Methods of forming a roughened metal surface on a substrate are provided, along with structures comprising such roughened surfaces. In preferred embodiments roughened surfaces are formed by selectively depositing metal or metal oxide on a substrate surface to form discrete, three-dimensional islands. Selective deposition may be obtained, for example, by modifying process conditions to cause metal agglomeration or by treating the substrate surface to provide a limited number of discontinuous reactive sites. The roughened metal surface may be used, for example, in the manufacture of integrated circuits.
摘要:
The invention relates generally to processes for enhancing the deposition of noble metal thin films on a substrate by atomic layer deposition. Treatment with gaseous halides or metalorganic compounds reduces the incubation time for deposition of noble metals on particular surfaces. The methods may be utilized to facilitate selective deposition. For example, selective deposition of noble metals on high-k materials relative to insulators can be enhanced by pretreatment with halide reactants. In addition, halide treatment can be used to avoid deposition on the quartz walls of the reaction chamber.
摘要:
Germanium has higher mobility than silicon and therefore is considered to be a good alternative semiconductor for CMOS technology. Surface treatments a can facilitate atomic layer deposition (ALD) of thin films, such as high-k dielectric layers, on germanium substrates. Surface treatment can comprise the formation of a thin layer of GeOx or GeOxNy. After surface treatment and prior to deposition of the desired thin film, a passivation layer may be deposited on the substrate. The passivation layer may be, for example, a metal oxide layer deposited by ALD.
摘要翻译:锗具有比硅更高的迁移率,因此被认为是用于CMOS技术的良好替代半导体。 表面处理a可以促进在锗衬底上的诸如高k电介质层的薄膜的原子层沉积(ALD)。 表面处理可以包括形成GeO层或GeO x N层的薄层。 在表面处理之后并且在沉积所需的薄膜之前,可以在衬底上沉积钝化层。 钝化层可以是例如由ALD沉积的金属氧化物层。