发明申请
- 专利标题： COMPOUND-TYPE THIN FILM, METHOD OF FORMING THE SAME, AND ELECTRONIC DEVICE USING THE SAME
- 专利标题（中）： 化合物薄膜，其形成方法和使用该薄膜的电子设备
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申请号： US12601684申请日： 2008-05-02
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公开(公告)号： US20100139762A1公开(公告)日： 2010-06-10
- 发明人: Tadahiro Ohmi , Hirokazu Asahara , Atsutoshi Inokuchi , Kohei Watanuki
- 申请人： Tadahiro Ohmi , Hirokazu Asahara , Atsutoshi Inokuchi , Kohei Watanuki
- 申请人地址： JP Sendai-shi, Miyagi JP Kyoto-shi, Kyoto JP Tokyo JP Ube-shi, Yamaguchi
- 专利权人： NATIONAL UNIVERSITY CORP TOHOKU UNIVERSITY,ROHM CO., LTD.,TOKYO ELECTRON LIMITED,UBE INDUSTRIES, LTD.
- 当前专利权人： NATIONAL UNIVERSITY CORP TOHOKU UNIVERSITY,ROHM CO., LTD.,TOKYO ELECTRON LIMITED,UBE INDUSTRIES, LTD.
- 当前专利权人地址： JP Sendai-shi, Miyagi JP Kyoto-shi, Kyoto JP Tokyo JP Ube-shi, Yamaguchi
- 优先权： JP2007-139412 20070525
- 国际申请： PCT/JP2008/058405 WO 20080502
- 主分类号： H01L31/04
- IPC分类号： H01L31/04 ; C23C16/513 ; B32B9/04 ; C30B25/02
摘要：
An organometal material gas is supplied into a low electron temperature and high density plasma excited by microwaves to form a thin film of a compound on a substrate as a film forming object. In this case, the temperature of a supply system for the organometal material gas is controlled by taking advantage of the relationship between the vapor pressure and temperature of the organometal material gas.