公开(公告)号：US08188468B2

公开(公告)日：2012-05-29

申请号：US12601684

申请日：2008-05-02

申请人： Tadahiro Ohmi ,  Hirokazu Asahara ,  Atsutoshi Inokuchi ,  Kohei Watanuki

发明人： Tadahiro Ohmi ,  Hirokazu Asahara ,  Atsutoshi Inokuchi ,  Kohei Watanuki

IPC分类号： H01L21/00

CPC分类号： C23C16/511 ,  C23C16/18 ,  C23C16/45565 ,  H01L21/0242 ,  H01L21/02422 ,  H01L21/02458 ,  H01L21/02472 ,  H01L21/0254 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/0262 ,  H01L29/7869 ,  H01L31/1804 ,  H01L31/1828 ,  H01L31/184 ,  H01L31/1884 ,  H01L31/206 ,  H01L33/0066 ,  H01L33/0087 ,  H01L33/02 ,  H01L2924/0002 ,  Y02E10/543 ,  Y02E10/544 ,  Y02E10/547 ,  Y02P70/521 ,  H01L2924/00

摘要： An organometal material gas is supplied into a low electron temperature and high density plasma excited by microwaves to form a thin film of a compound on a substrate as a film forming object. In this case, the temperature of a supply system for the organometal material gas is controlled by taking advantage of the relationship between the vapor pressure and temperature of the organometal material gas.

摘要翻译： 将有机金属材料气体供给到由微波激发的低电子温度和高密度等离子体中，以形成作为成膜体的基板上的化合物的薄膜。 在这种情况下，通过利用有机金属材料气体的蒸汽压力和温度之间的关系来控制有机金属材料气体的供给系统的温度。

公开(公告)号：US20100139762A1

公开(公告)日：2010-06-10

申请号：US12601684

申请日：2008-05-02

申请人： Tadahiro Ohmi ,  Hirokazu Asahara ,  Atsutoshi Inokuchi ,  Kohei Watanuki

发明人： Tadahiro Ohmi ,  Hirokazu Asahara ,  Atsutoshi Inokuchi ,  Kohei Watanuki

IPC分类号： H01L31/04 ,  C23C16/513 ,  B32B9/04 ,  C30B25/02

CPC分类号： C23C16/511 ,  C23C16/18 ,  C23C16/45565 ,  H01L21/0242 ,  H01L21/02422 ,  H01L21/02458 ,  H01L21/02472 ,  H01L21/0254 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/0262 ,  H01L29/7869 ,  H01L31/1804 ,  H01L31/1828 ,  H01L31/184 ,  H01L31/1884 ,  H01L31/206 ,  H01L33/0066 ,  H01L33/0087 ,  H01L33/02 ,  H01L2924/0002 ,  Y02E10/543 ,  Y02E10/544 ,  Y02E10/547 ,  Y02P70/521 ,  H01L2924/00

摘要： An organometal material gas is supplied into a low electron temperature and high density plasma excited by microwaves to form a thin film of a compound on a substrate as a film forming object. In this case, the temperature of a supply system for the organometal material gas is controlled by taking advantage of the relationship between the vapor pressure and temperature of the organometal material gas.

摘要翻译： 将有机金属材料气体供给到由微波激发的低电子温度和高密度等离子体中，以形成作为成膜体的基板上的化合物的薄膜。 在这种情况下，通过利用有机金属材料气体的蒸汽压力和温度之间的关系来控制有机金属材料气体的供给系统的温度。

公开(公告)号：US20110127075A1

公开(公告)日：2011-06-02

申请号：US12673543

申请日：2008-08-14

申请人： Tadahiro Ohmi ,  Takaaki Matsuoka ,  Atsutoshi Inokuchi ,  Kohei Watanuki ,  Tadashi Koike ,  Tatsuhiko Adachi

发明人： Tadahiro Ohmi ,  Takaaki Matsuoka ,  Atsutoshi Inokuchi ,  Kohei Watanuki ,  Tadashi Koike ,  Tatsuhiko Adachi

IPC分类号： H05K1/11 ,  H05K3/46 ,  H05K3/36 ,  H05K1/00

CPC分类号： H01L23/5329 ,  H01L21/0212 ,  H01L21/02126 ,  H01L21/022 ,  H01L21/02274 ,  H01L21/02304 ,  H01L21/02362 ,  H01L21/3121 ,  H01L21/316 ,  H01L21/76807 ,  H01L21/76819 ,  H01L21/76829 ,  H01L21/76832 ,  H01L21/76835 ,  H01L21/7684 ,  H01L21/76897 ,  H01L23/53238 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

摘要： An insulative coat film comprising one or two or more kinds of oxides having a dielectric constant (k) of 2.5 or smaller and expressed by a general formula of ((CH3)nSiO2-n/2)x(SiO2)1-x (where n=1 to 3, x≦1) is used to form an interlayer insulation film. The insulative coat film applied by spin-coating is flat without reflecting underlying unevenness, and the heat-treated film has surface roughness of 1 nm or less in Ra and 20 nm or less in a P-V value. The interlayer insulation film containing the insulative coat film can have a wiring structure and an electrode formed only by etching without need of a CMP process.

摘要翻译： 包含介电常数（k）为2.5或更小并由通式（（CH 3）n SiO 2 -n / 2）x（SiO 2）1-x表示的一种或两种以上的氧化物的绝缘涂膜，其中 n = 1〜3，x＆lt; 1; 1）用于形成层间绝缘膜。 通过旋涂施加的绝缘涂膜是平坦的，没有反射下面的不均匀，并且热处理膜在Ra中的表面粗糙度为1nm以下，P-V值为20nm以下。 包含绝缘涂膜的层间绝缘膜可以具有布线结构和仅通过蚀刻形成的电极，而不需要CMP工艺。

公开(公告)号：US20110215384A1

公开(公告)日：2011-09-08

申请号：US12673550

申请日：2008-08-14

申请人： Tadahiro Ohmi ,  Takaaki Matsuoka ,  Atsutoshi Inokuchi ,  Kohei Watanuki ,  Tadashi Koike ,  Tatsuhiko Adachi

发明人： Tadahiro Ohmi ,  Takaaki Matsuoka ,  Atsutoshi Inokuchi ,  Kohei Watanuki ,  Tadashi Koike ,  Tatsuhiko Adachi

IPC分类号： H01L29/78 ,  H01L29/06 ,  H01L21/762 ,  H01L21/336

CPC分类号： H01L21/02255 ,  H01L21/02118 ,  H01L21/02126 ,  H01L21/02164 ,  H01L21/02167 ,  H01L21/0217 ,  H01L21/022 ,  H01L21/02271 ,  H01L21/02282 ,  H01L21/3121 ,  H01L21/316 ,  H01L21/76807 ,  H01L21/76828 ,  H01L21/76835 ,  H01L21/76897 ,  H01L21/823425 ,  H01L21/823475 ,  H01L21/823481 ,  H01L21/823871 ,  H01L21/823878 ,  H01L23/53295 ,  H01L24/19 ,  H01L24/96 ,  H01L2224/32145 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/1461 ,  H01L2924/181 ,  H01L2924/19105 ,  H01L2924/3511 ,  H01L2924/00

摘要： In manufacturing processes of a semiconductor device including a shallow trench element isolation region and an interlayer insulating film of a multilayer structure, it is necessary to repeatedly use CMP, but since the CMP itself is costly, the repeated use of the CMP is a cause to increase the manufacturing cost.As an insulating film for use in a shallow trench (ST) element isolation region and/or a lowermost-layer interlayer insulating film, use is made of an insulating coating film that can be coated by spin coating. The insulating coating film has a composition expressed by ((CH3)nSiO2-n/2)x(SiO2)1-x(where n=1 to 3 and 0≦x≦1.0) and a film with a different relative permittivity k is formed by selecting heat treatment conditions. The STI element isolation region can be formed by modifying the insulating coating film completely to a SiO2 film, while the interlayer insulating film with a small relative permittivity k can be formed by converting it to a state not completely modified.

摘要翻译： 在包括浅沟槽元件隔离区域和多层结构的层间绝缘膜的半导体器件的制造工艺中，需要重复使用CMP，但是由于CMP本身是昂贵的，所以重复使用CMP是造成 增加制造成本。 作为用于浅沟槽（ST）元件隔离区域和/或最下层层间绝缘膜的绝缘膜，可以使用可通过旋涂进行涂覆的绝缘涂膜。 绝缘涂膜具有由（（CH 3）n SiO 2 -n / 2）x（SiO 2）1-x（其中n = 1至3和0＆nlE; x＆nlE; 1.0）表示的组成，并且具有不同相对介电常数k的膜 通过选择热处理条件形成。 可以通过将绝缘涂膜完全改性为SiO 2膜来形成STI元件隔离区域，而具有小相对介电常数k的层间绝缘膜可以通过将其转换为未完全改性的状态来形成。

公开(公告)号：US20120037407A1

公开(公告)日：2012-02-16

申请号：US13266269

申请日：2010-04-10

申请人： Tadahiro Ohmi ,  Hirokazu Asahara ,  Kohei Watanuki ,  Kouji Tanaka

发明人： Tadahiro Ohmi ,  Hirokazu Asahara ,  Kohei Watanuki ,  Kouji Tanaka

IPC分类号： H05K1/03 ,  C23C16/50 ,  B32B17/06 ,  C23C16/40

CPC分类号： H01L31/1884 ,  H01L31/022483 ,  H01L31/075 ,  Y02E10/548

摘要： It has been found out that, among transparent conductive layers, a zinc oxide layer has a function of preventing diffusion of sodium. An electronic apparatus is obtained which uses the zinc oxide layer as an electrode of the electronic apparatus and also as a diffusion preventing layer for preventing diffusion of sodium from a glass substrate.

摘要翻译： 已经发现，在透明导电层中，氧化锌层具有防止钠扩散的功能。 获得使用氧化锌层作为电子设备的电极的电子设备，并且还用作防止钠从玻璃基板扩散的扩散防止层。

公开(公告)号：US20100059820A1

公开(公告)日：2010-03-11

申请号：US12520317

申请日：2007-12-19

申请人： Tadahiro Ohmi ,  Koichi Sugitani ,  Tadashi Koike ,  Akinori Bamba ,  Akihiro Kobayashi ,  Kohei Watanuki

发明人： Tadahiro Ohmi ,  Koichi Sugitani ,  Tadashi Koike ,  Akinori Bamba ,  Akihiro Kobayashi ,  Kohei Watanuki

IPC分类号： H01L29/786 ,  H01L21/28 ,  C09D7/12

CPC分类号： H01L29/4908 ,  H01L27/1292 ,  H01L29/78639

摘要： A thin-film transistor (TFT) has a gate insulating film excellent in transparency and flatness. The gate insulating film is formed by a transparent insulating film (131) which is composed of an oxide represented by RxMOy and which is arranged between a gate electrode and a semiconductor layer. The transparent insulating film (131) is made of a coating agent which is composed of one mixed liquid obtained by dissolving or dispersing a condensate, which is obtained by subjecting a compound represented by RxMXm-x (where R represents a non-hydrolyzable substituent, M represents Si, Ti, Al, Zr, Zn, Sn or In, X represents a hydrolyzable substituent, x represents an integer of 0-3, and m represents the valence of M) to a hydrolysis-condensation reaction, in an organic solvent, water or their mixed solvent, or alternatively a coating agent which is obtained by mixing two or more of such mixed liquids.

摘要翻译： 薄膜晶体管（TFT）具有透明性和平坦度优异的栅极绝缘膜。 栅极绝缘膜由透明绝缘膜（131）形成，该绝缘膜由RxMOy表示的氧化物构成，并且配置在栅电极和半导体层之间。 透明绝缘膜（131）由涂布剂构成，该涂布剂是将通过使由RxMXm-x（其中R表示不可水解取代基的R表示不可水解取代基）表示的化合物 在有机溶剂中，M表示Si，Ti，Al，Zr，Zn，Sn或In，X表示可水解取代基，x表示0-3的整数，m表示M表示水解缩合反应的化合价） ，水或其混合溶剂，或者通过混合两种或更多种这样的混合液而获得的涂层剂。

公开(公告)号：US08573151B2

公开(公告)日：2013-11-05

申请号：US12393724

申请日：2009-02-26

申请人： Tadahiro Ohmi ,  Masaki Hirayama ,  Tetsuya Goto ,  Yasuyuki Shirai ,  Masafumi Kitano ,  Kohei Watanuki ,  Takaaki Matsuoka ,  Shigemi Murakawa

发明人： Tadahiro Ohmi ,  Masaki Hirayama ,  Tetsuya Goto ,  Yasuyuki Shirai ,  Masafumi Kitano ,  Kohei Watanuki ,  Takaaki Matsuoka ,  Shigemi Murakawa

IPC分类号： C23C16/00 ,  C23F1/00 ,  H01L21/306 ,  B05D5/06 ,  B05D3/02

CPC分类号： H01J37/32192 ,  H01J37/32238

摘要： A conventional microwave plasma processing apparatus, even when krypton (Kr) is used as a plasma-generation gas, can only obtain an oxide film or a nitride film having the same level of characteristics as those obtained when a rare gas such as argon (Ar) is used as a plasma-generation gas. Accordingly, instead of forming a dielectric window of a microwave plasma processing apparatus with only a ceramic member, a planarization film capable of obtaining a stoichiometric SiO2 composition by thermal treatment is coated on one of a plurality of surfaces of the ceramic member, the surface facing a process space, and then thermally-treated, thereby forming a planarization insulation film having a very flat and dense surface. A corrosion-resistant film is formed on the planarization insulation film.

摘要翻译： 传统的微波等离子体处理装置即使使用氪（Kr）作为等离子体产生气体，也只能得到与稀有气体例如氩气（Ar）相同的特性水平的氧化膜或氮化物膜 ）用作等离子体发生气体。 因此，代替形成仅具有陶瓷构件的微波等离子体处理装置的介电窗口，可以通过热处理获得化学计量的SiO 2组成的平坦化膜涂覆在陶瓷构件的多个表面中的一个表面上， 处理空间，然后热处理，从而形成具有非常平坦和致密表面的平坦化绝缘膜。 在平坦化绝缘膜上形成耐腐蚀膜。

公开(公告)号：US20110094781A1

公开(公告)日：2011-04-28

申请号：US13001807

申请日：2009-06-25

申请人： Tadahiro Ohmi ,  Kohei Watanuki ,  Hirokazu Suzuki

发明人： Tadahiro Ohmi ,  Kohei Watanuki ,  Hirokazu Suzuki

IPC分类号： H05K1/03 ,  B05D5/12

CPC分类号： H01J5/08 ,  C03C17/23 ,  C03C17/25 ,  C03C17/36 ,  C03C17/3678 ,  C03C2217/213 ,  C03C2218/11 ,  G02F1/1333 ,  G02F2001/133337 ,  H01J2211/34 ,  H01J2329/88 ,  H01L31/0392 ,  Y02E10/50

摘要： An electronic device comprises a glass substrate (10) containing sodium, and a sodium diffusion-preventing film (11) which is a planarization coating film formed on the glass substrate (10). An electronic element (12) is formed on the sodium diffusion-preventing film (11).

摘要翻译： 电子装置包括含有钠的玻璃基板（10）和形成在玻璃基板（10）上的平坦化涂膜的钠扩散防止膜（11）。 在钠扩散防止膜（11）上形成电子元件（12）。

公开(公告)号：US20100203713A1

公开(公告)日：2010-08-12

申请号：US12733595

申请日：2008-09-05

申请人： Tadahiro Ohmi ,  Makoto Fujimura ,  Tadashi Koike ,  Akinori Bamba ,  Akihiro Kobayashi ,  Kohei Watanuki

发明人： Tadahiro Ohmi ,  Makoto Fujimura ,  Tadashi Koike ,  Akinori Bamba ,  Akihiro Kobayashi ,  Kohei Watanuki

IPC分类号： H01L21/28 ,  H01L21/20

CPC分类号： H05K3/048 ,  H01L21/0331 ,  H01L27/1288 ,  H01L29/66765 ,  H05K1/0306 ,  H05K3/107 ,  H05K2201/0166 ,  H05K2201/0175

摘要： An object of this invention is to provide a method for manufacturing an electronic device wherein a conductor layer is uniformly formed on a substrate having a super large area. In the method for manufacturing the electronic device, a metal film for forming a gate electrode is selectively embedded in a transparent resin film formed on a substrate, and the metal film is formed by sputtering directly on the substrate at the gate electrode portion, and on an insulating coat film on portions other than the gate electrode portion. The metal film on the insulating coat film is removed by chemical liftoff with removal of the insulating coat film by etching.

摘要翻译： 本发明的目的是提供一种电子器件的制造方法，其中导体层均匀地形成在具有超大面积的基片上。 在电子设备的制造方法中，用于形成栅电极的金属膜选择性地嵌入到形成在基板上的透明树脂膜中，并且金属膜通过在栅电极部分处直接溅射在基板上而形成， 在除了栅电极部分之外的部分上的绝缘涂膜。 通过化学剥离除去绝缘涂膜上的金属膜，通过蚀刻除去绝缘涂膜。