发明申请
- 专利标题： METHOD AND APPARATUS FOR MANUFACTURING EPITAXIAL SILICON WAFER
- 专利标题（中）： 用于制造外延硅片的方法和装置
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申请号： US12632032申请日： 2009-12-07
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公开(公告)号： US20100143579A1公开(公告)日： 2010-06-10
- 发明人: Kazuhiro NARAHARA
- 申请人： Kazuhiro NARAHARA
- 申请人地址： JP Nagasaki
- 专利权人： SUMCO TECHXIV CORPORATION
- 当前专利权人： SUMCO TECHXIV CORPORATION
- 当前专利权人地址： JP Nagasaki
- 优先权： JP2008-315108 20081210; JP2008-315109 20081210
- 主分类号： C23C16/52
- IPC分类号： C23C16/52 ; C23C16/00
摘要：
A method of manufacturing an epitaxial wafer in which an epitaxial layer is grown over a main surface of a silicon wafer placed substantially horizontally on a susceptor is provided. The method comprises: a growing step of the epitaxial layer; and a cooling step of cooling the epitaxial wafer having the epitaxial layer. The cooling step comprises: a wafer measurement step of measuring a temperature of the epitaxial wafer; a susceptor measurement step of measuring a temperature of the susceptor; and a control step of controlling a heater capable of heating at least the susceptor or the epitaxial wafer such that difference between a temperature of the epitaxial wafer and a temperature of the susceptor is within a predetermined range.
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