发明申请
US20100144117A1 Semiconductor device having device characteristics improved by straining surface of active region and its manufacture method
有权
具有通过有源区域的表面变形而改善了器件特性的半导体器件及其制造方法
- 专利标题： Semiconductor device having device characteristics improved by straining surface of active region and its manufacture method
- 专利标题（中）： 具有通过有源区域的表面变形而改善了器件特性的半导体器件及其制造方法
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申请号： US12708519申请日： 2010-02-18
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公开(公告)号： US20100144117A1公开(公告)日： 2010-06-10
- 发明人: Sadahiro Kishii , Hirofumi Watatani , Masanori Terahara , Ryo Tanabe , Kaina Suzuki , Shigeo Satoh
- 申请人： Sadahiro Kishii , Hirofumi Watatani , Masanori Terahara , Ryo Tanabe , Kaina Suzuki , Shigeo Satoh
- 申请人地址： JP Kawasaki-shi
- 专利权人： FUJITSU LIMITED
- 当前专利权人： FUJITSU LIMITED
- 当前专利权人地址： JP Kawasaki-shi
- 优先权： JP2006-094704 20060330
- 主分类号： H01L21/762
- IPC分类号： H01L21/762
摘要：
A trench is formed in a surface layer of a semiconductor substrate, the trench surrounding an active region. A lower insulating film made of insulating material is deposited over the semiconductor device, the lower insulating film filling a lower region of the trench and leaving an empty space in an upper region. An upper insulating film made of insulating material having therein a tensile stress is deposited on the lower insulating film, the upper insulating film filling the empty space left in the upper space. The upper insulating film and the lower insulating film deposited over the semiconductor substrate other than in the trench are removed.
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