发明申请
US20100155778A1 METHOD FOR ENHANCING GROWTH OF SEMIPOLAR (AL,IN,GA,B)N VIA METALORGANIC CHEMICAL VAPOR DEPOSITION
有权
用于增强半成品（AL，IN，GA，B）N生长的方法通过金属化学气相沉积
- 专利标题： METHOD FOR ENHANCING GROWTH OF SEMIPOLAR (AL,IN,GA,B)N VIA METALORGANIC CHEMICAL VAPOR DEPOSITION
- 专利标题（中）： 用于增强半成品（AL，IN，GA，B）N生长的方法通过金属化学气相沉积
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申请号： US12716670申请日： 2010-03-03
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公开(公告)号： US20100155778A1公开(公告)日： 2010-06-24
- 发明人: Hitoshi Sato , John F. Kaeding , Michael Iza , Troy J. Baker , Benjamin A. Haskell , Steven P. DenBaars , Shuji Nakamura
- 申请人： Hitoshi Sato , John F. Kaeding , Michael Iza , Troy J. Baker , Benjamin A. Haskell , Steven P. DenBaars , Shuji Nakamura
- 申请人地址： US CA Oakland
- 专利权人： THE REGENTS OF THE UNIVERSITY OF CALIFORNIA
- 当前专利权人： THE REGENTS OF THE UNIVERSITY OF CALIFORNIA
- 当前专利权人地址： US CA Oakland
- 主分类号： H01L29/20
- IPC分类号： H01L29/20 ; H01L21/203
摘要：
A method for enhancing growth of device-quality planar semipolar nitride semiconductor thin films via metalorganic chemical vapor deposition (MOCVD) by using an (Al, In, Ga)N nucleation layer containing at least some indium. Specifically, the method comprises loading a substrate into a reactor, heating the substrate under a flow of nitrogen and/or hydrogen and/or ammonia, depositing an InxGa1-xN nucleation layer on the heated substrate, depositing a semipolar nitride semiconductor thin film on the InxGa1-xN nucleation layer, and cooling the substrate under a nitrogen overpressure.
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