发明申请
US20100155786A1 Methods and devices for forming nanostructure monolayers and devices including such monolayers
有权
用于形成纳米结构单层的方法和装置以及包括这种单层的装置
- 专利标题： Methods and devices for forming nanostructure monolayers and devices including such monolayers
- 专利标题（中）： 用于形成纳米结构单层的方法和装置以及包括这种单层的装置
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申请号： US11881739申请日： 2007-07-27
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公开(公告)号： US20100155786A1公开(公告)日： 2010-06-24
- 发明人: David L. Heald , Jian Chen , Karen Chu Cruden , Xiangfeng Duan , Chao Liu , Madhuri L. Nallabolu , J. Wallace Parce , Srikanth Ranganathan
- 申请人： David L. Heald , Jian Chen , Karen Chu Cruden , Xiangfeng Duan , Chao Liu , Madhuri L. Nallabolu , J. Wallace Parce , Srikanth Ranganathan
- 申请人地址： US CA Palo Alto
- 专利权人： NANOSYS, Inc.
- 当前专利权人： NANOSYS, Inc.
- 当前专利权人地址： US CA Palo Alto
- 主分类号： H01L29/772
- IPC分类号： H01L29/772 ; H01L21/302 ; H01L21/31
摘要：
Methods for forming or patterning nanostructure arrays are provided. The methods involve formation of arrays on coatings comprising nanostructure association groups, formation of arrays in spin-on-dielectrics, solvent annealing after nanostructure deposition, patterning using resist, and/or use of devices that facilitate array formation. Related devices for forming nanostructure arrays are also provided, as are devices including nanostructure arrays (e.g., memory devices). Methods for protecting nanostructures from fusion during high temperature processing are also provided.
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