- 专利标题： Semiconductor device and method of manufacturing the same
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申请号： US12659250申请日： 2010-03-02
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公开(公告)号： US20100159686A1公开(公告)日： 2010-06-24
- 发明人: Akio Kaneko , Seiji Inumiya , Katsuyuki Sekine , Kazuhiro Eguchi , Motoyuki Sato
- 申请人： Akio Kaneko , Seiji Inumiya , Katsuyuki Sekine , Kazuhiro Eguchi , Motoyuki Sato
- 专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人： Kabushiki Kaisha Toshiba
- 优先权： JP2003-335966 20030926
- 主分类号： H01L21/28
- IPC分类号： H01L21/28
摘要：
A semiconductor device according to the present invention comprises a semiconductor substrate, a gate insulating film which is composed of a material whose main component is a tetravalent metal oxide, a mixture of a tetravalent metal oxide and SiO2, or a mixture of a tetravalent metal oxide and SiON and which containing B when it is in an nMOS structure on the semiconductor substrate or containing at least one of P and As when it is in a pMOS structure on the semiconductor substrate, and a gate electrode made of a metal having a work function of 4 eV to 5.5 eV.
公开/授权文献
- US07968397B2 Semiconductor device and method of manufacturing the same 公开/授权日：2011-06-28
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