发明申请
- 专利标题： Resist underlayer composition and method of manufacturing semiconductor integrated circuit device using the same
- 专利标题（中）： 抗蚀剂底层组合物和使用其制造半导体集成电路器件的方法
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申请号： US12654737申请日： 2009-12-30
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公开(公告)号： US20100167203A1公开(公告)日： 2010-07-01
- 发明人: Hyeon-Mo Cho , Sang-Kyun Kim , Chang-Soo Woo , Mi-Young Kim , Sang-Ran Koh , Hui-Chan Yun , Woo-Jin Lee , Jong-Seob Kim
- 申请人： Hyeon-Mo Cho , Sang-Kyun Kim , Chang-Soo Woo , Mi-Young Kim , Sang-Ran Koh , Hui-Chan Yun , Woo-Jin Lee , Jong-Seob Kim
- 优先权： KR10-2008-0137227 20081230
- 主分类号： G03F7/20
- IPC分类号： G03F7/20 ; G03F7/004
摘要：
A resist underlayer composition and a method of manufacturing a semiconductor integrated circuit device, the composition including a solvent and an organosilane polymer, the organosilane polymer being a condensation polymerization product of at least one first compound represented by Chemical Formulae 1 and 2 and at least one second compound represented by Chemical Formulae 3 to 5.
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