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1.发明申请RESIST UNDERLAYER COMPOSITION AND METHOD OF MANUFACTURING INTEGRATED CIRCUIT DEVICE USING THE SAME 审中-公开耐蚀组合物及使用其制造集成电路装置的方法公开(公告)号：US20100167212A1
公开(公告)日：2010-07-01
申请号：US12654742
申请日：2009-12-30
Applicant: Hyeon-Mo Cho , Sang-Kyun Kim , Mi-Young Kim , Sang-Ran Koh , Hui-Chang Yun , Yong-Jin Chung , Jong-Seob Kim , In-Sun Jung
Inventor： Hyeon-Mo Cho , Sang-Kyun Kim , Mi-Young Kim , Sang-Ran Koh , Hui-Chang Yun , Yong-Jin Chung , Jong-Seob Kim , In-Sun Jung
IPC: G03F7/20 , C08L61/00 , C08L83/00 , C08K5/3432 , C08G77/00
CPC classification number: G03F7/11 , C08K5/54 , G03F7/0752
Abstract: A resist underlayer composition and a method of manufacturing a semiconductor integrated circuit device, the resist underlayer composition including a solvent and an organosilane-based polymer, the organosilane-based polymer being a polymerization product of at least one first compound represented Chemical Formulae 1 to 3 and at least one second compound represented by Chemical Formulae 4 and 5.
Abstract translation: 抗蚀剂下层组合物和半导体集成电路器件的制造方法，所述抗蚀剂底层组合物包含溶剂和有机硅烷系聚合物，所述有机硅烷类聚合物为至少一种化学式1〜3的第一化合物的聚合产物 和由化学式4和5表示的至少一种第二化合物。
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2.发明授权Resist underlayer composition and method of manufacturing semiconductor integrated circuit device using the same 有权抗蚀剂底层组合物和使用其制造半导体集成电路器件的方法公开(公告)号：US09291899B2
公开(公告)日：2016-03-22
申请号：US12654737
申请日：2009-12-30
Applicant: Hyeon-Mo Cho , Sang-Kyun Kim , Chang-Soo Woo , Mi-Young Kim , Sang-Ran Koh , Hui-Chan Yun , Woo-Jin Lee , Jong-Seob Kim
Inventor： Hyeon-Mo Cho , Sang-Kyun Kim , Chang-Soo Woo , Mi-Young Kim , Sang-Ran Koh , Hui-Chan Yun , Woo-Jin Lee , Jong-Seob Kim
IPC: G03F7/075 , G03F7/09 , G03F7/11 , G03F7/30 , G03F7/36 , C08G77/50 , C08G77/52 , C08K5/00 , C08L83/04 , C08L83/14 , C09D183/04 , C09D183/14 , C08G77/12 , C08G77/14 , C08G77/16 , C08G77/18 , C08G77/20 , C08G77/24 , C08G77/26 , C08G77/00
CPC classification number: G03F7/0752 , C08G77/12 , C08G77/14 , C08G77/16 , C08G77/18 , C08G77/20 , C08G77/24 , C08G77/26 , C08G77/50 , C08G77/52 , C08G77/70 , C08K5/0008 , C08L83/04 , C08L83/14 , C09D183/04 , C09D183/14 , G03F7/0757 , G03F7/09 , G03F7/091 , G03F7/094 , G03F7/11 , G03F7/30 , G03F7/36
Abstract: A resist underlayer composition and a method of manufacturing a semiconductor integrated circuit device, the composition including a solvent and an organosilane polymer, the organosilane polymer being a condensation polymerization product of at least one first compound represented by Chemical Formulae 1 and 2 and at least one second compound represented by Chemical Formulae 3 to 5.
Abstract translation: 抗蚀剂下层组合物和半导体集成电路器件的制造方法，所述组合物包括溶剂和有机硅烷聚合物，所述有机硅烷聚合物是至少一种由化学式1和2表示的第一化合物的缩聚产物和至少一种 化学式3〜5表示的第二化合物。
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3.发明授权Silicon-based hardmask composition and process of producing semiconductor integrated circuit device using the same 有权基于硅的硬掩模组成和使用其的半导体集成电路器件的制造工艺公开(公告)号：US08524851B2
公开(公告)日：2013-09-03
申请号：US12805081
申请日：2010-07-12
Applicant: Sang Kyun Kim , Hyeon Mo Cho , Sang Ran Koh , Mi Young Kim , Hui Chan Yun , Yong Jin Chung , Jong Seob Kim
Inventor： Sang Kyun Kim , Hyeon Mo Cho , Sang Ran Koh , Mi Young Kim , Hui Chan Yun , Yong Jin Chung , Jong Seob Kim
IPC: C08G77/60
CPC classification number: H01L21/31144 , C08G77/16 , C08G77/50 , C08G77/52 , C08G77/70 , H01L21/02126 , H01L21/02216 , H01L21/02282 , H01L21/0332 , H01L21/3081 , H01L21/3122 , H01L21/32139
Abstract: A silicon-based hardmask composition, including an organosilane polymer represented by Formula 1: {(SiO1.5—Y—SiO1.5)x(R3SiO1.5)y(XSiO1.5)z}(OH)e(OR6)f (1).
Abstract translation: 一种硅基硬掩模组合物，包括由式1表示的有机硅烷聚合物：{（SiO 1.5-Y-SiO 1.5）x（R 3 SiO 1.5）y（XSiO 1.5）z}（OH）e（OR 6）f （1）。
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4.发明申请Resist underlayer composition and method of manufacturing semiconductor integrated circuit device using the same 有权抗蚀剂底层组合物和使用其制造半导体集成电路器件的方法公开(公告)号：US20100167203A1
公开(公告)日：2010-07-01
申请号：US12654737
申请日：2009-12-30
Applicant: Hyeon-Mo Cho , Sang-Kyun Kim , Chang-Soo Woo , Mi-Young Kim , Sang-Ran Koh , Hui-Chan Yun , Woo-Jin Lee , Jong-Seob Kim
Inventor： Hyeon-Mo Cho , Sang-Kyun Kim , Chang-Soo Woo , Mi-Young Kim , Sang-Ran Koh , Hui-Chan Yun , Woo-Jin Lee , Jong-Seob Kim
CPC classification number: G03F7/0752 , C08G77/12 , C08G77/14 , C08G77/16 , C08G77/18 , C08G77/20 , C08G77/24 , C08G77/26 , C08G77/50 , C08G77/52 , C08G77/70 , C08K5/0008 , C08L83/04 , C08L83/14 , C09D183/04 , C09D183/14 , G03F7/0757 , G03F7/09 , G03F7/091 , G03F7/094 , G03F7/11 , G03F7/30 , G03F7/36
Abstract: A resist underlayer composition and a method of manufacturing a semiconductor integrated circuit device, the composition including a solvent and an organosilane polymer, the organosilane polymer being a condensation polymerization product of at least one first compound represented by Chemical Formulae 1 and 2 and at least one second compound represented by Chemical Formulae 3 to 5.
Abstract translation: 抗蚀剂下层组合物和半导体集成电路器件的制造方法，所述组合物包括溶剂和有机硅烷聚合物，所述有机硅烷聚合物是至少一种由化学式1和2表示的第一化合物的缩聚产物和至少一种 化学式3〜5表示的第二化合物。
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5.发明授权Resist underlayer composition and process of producing integrated circuit devices using the same 有权抗蚀底层组合物和使用其制造集成电路器件的工艺公开(公告)号：US09140986B2
公开(公告)日：2015-09-22
申请号：US13539760
申请日：2012-07-02
Applicant: Mi-Young Kim , Sang-Kyun Kim , Hyeon-Mo Cho , Sang-Ran Koh , Hui-Chan Yun , Yong-Jin Chung , Jong-Seob Kim
Inventor： Mi-Young Kim , Sang-Kyun Kim , Hyeon-Mo Cho , Sang-Ran Koh , Hui-Chan Yun , Yong-Jin Chung , Jong-Seob Kim
IPC: C08G77/08 , G03F7/075 , G03F7/11 , H01L21/02 , H01L21/033 , C08L83/04 , C08G77/16 , C08G77/18 , C08L83/06
CPC classification number: G03F7/0752 , C08G77/16 , C08G77/18 , C08L83/04 , C08L83/06 , G03F7/11 , H01L21/02126 , H01L21/02216 , H01L21/02282 , H01L21/0332
Abstract: A resist underlayer composition includes a solvent and an organosilane condensation polymerization product, the organosilane condensation polymerization product including about 40 to about 80 mol % of a structural unit represented by the following Chemical Formula 1,
Abstract translation: 抗蚀剂底层组合物包括溶剂和有机硅烷缩聚产物，所述有机硅烷缩聚产物包含约40至约80mol％的由以下化学式1表示的结构单元，
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Patent Agency Ranking
6.发明申请公开(公告)号：US20120282776A1
公开(公告)日：2012-11-08
申请号：US13540111
申请日：2012-07-02
Applicant: Mi-Young KIM , Sang-Kyun KIM , Hyeon-Mo CHO , Chang-Soo WOO , Sang-Ran KOH , Hui-Chan YUN , Woo-Jin LEE , Jong-Seob KIM
Inventor： Mi-Young KIM , Sang-Kyun KIM , Hyeon-Mo CHO , Chang-Soo WOO , Sang-Ran KOH , Hui-Chan YUN , Woo-Jin LEE , Jong-Seob KIM
IPC: C09D183/06 , H01L21/311
CPC classification number: G03F7/0752 , G03F7/09 , G03F7/11
Abstract: A photoresist underlayer composition includes a solvent, and a polysiloxane resin represented by Chemical Formula 1: {(SiO1.5—Y—SiO1.5)(SiO2)y(XSiO1.5)z}(OH)e(OR1)f. [Chemical Formula 1]
Abstract translation: 光致抗蚀剂底层组合物包括溶剂和由化学式1表示的聚硅氧烷树脂：{（SiO 1.5-Y-SiO 1.5）（SiO 2）y（XSiO 1.5）z}（OH）e（OR 1）f。 [化学式1]
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7.发明申请RESIST UNDERLAYER COMPOSITION AND PROCESS OF PRODUCING INTEGRATED CIRCUIT DEVICES USING THE SAME 有权使用相同的底层组合物和制造集成电路装置的方法公开(公告)号：US20120267766A1
公开(公告)日：2012-10-25
申请号：US13539760
申请日：2012-07-02
Applicant: Mi-Young KIM , Sang-Kyun KIM , Hyeon-Mo CHO , Sang-Ran KOH , Hui-Chan YUN , Yong-Jin CHUNG , Jong-Seob KIM
Inventor： Mi-Young KIM , Sang-Kyun KIM , Hyeon-Mo CHO , Sang-Ran KOH , Hui-Chan YUN , Yong-Jin CHUNG , Jong-Seob KIM
IPC: C08K5/101 , H01L21/31 , H01L29/02 , C08K5/3432
CPC classification number: G03F7/0752 , C08G77/16 , C08G77/18 , C08L83/04 , C08L83/06 , G03F7/11 , H01L21/02126 , H01L21/02216 , H01L21/02282 , H01L21/0332
Abstract: A resist underlayer composition includes a solvent and an organosilane condensation polymerization product, the organosilane condensation polymerization product including about 40 to about 80 mol % of a structural unit represented by the following Chemical Formula 1,
Abstract translation: 抗蚀剂底层组合物包括溶剂和有机硅烷缩聚产物，所述有机硅烷缩聚产物包含约40至约80mol％的由以下化学式1表示的结构单元，
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8.发明申请Silicon-based hardmask composition and process of producing semiconductor integrated circuit device using the same 有权基于硅的硬掩模组成和使用其的半导体集成电路器件的制造工艺公开(公告)号：US20100279509A1
公开(公告)日：2010-11-04
申请号：US12805081
申请日：2010-07-12
Applicant: Sang Kyun Kim , Hyeon Mo Cho , Sang Ran Koh , Mi Young Kim , Hui Chan Yun , Yong Jin Chung , Jong Seob Kim
Inventor： Sang Kyun Kim , Hyeon Mo Cho , Sang Ran Koh , Mi Young Kim , Hui Chan Yun , Yong Jin Chung , Jong Seob Kim
IPC: H01L21/306 , C08L83/06
CPC classification number: H01L21/31144 , C08G77/16 , C08G77/50 , C08G77/52 , C08G77/70 , H01L21/02126 , H01L21/02216 , H01L21/02282 , H01L21/0332 , H01L21/3081 , H01L21/3122 , H01L21/32139
Abstract: A silicon-based hardmask composition, including an organosilane polymer represented by Formula 1: {(SiO1.5—Y—SiO1.5)x(R3SiO1.5)y(XSiO1.5)z}(OH)e(OR6)f (1).
Abstract translation: 一种硅基硬掩模组合物，包括由式1表示的有机硅烷聚合物：{（SiO 1.5-Y-SiO 1.5）x（R 3 SiO 1.5）y（XSiO 1.5）z}（OH）e（OR 6）f （1）。
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9.发明授权公开(公告)号：US08758981B2
公开(公告)日：2014-06-24
申请号：US13540111
申请日：2012-07-02
Applicant: Mi-Young Kim , Sang-Kyun Kim , Hyeon-Mo Cho , Chang-Soo Woo , Sang-Ran Koh , Hui-Chan Yun , Woo-Jin Lee , Jong-Seob Kim
Inventor： Mi-Young Kim , Sang-Kyun Kim , Hyeon-Mo Cho , Chang-Soo Woo , Sang-Ran Koh , Hui-Chan Yun , Woo-Jin Lee , Jong-Seob Kim
CPC classification number: G03F7/0752 , G03F7/09 , G03F7/11
Abstract: A photoresist underlayer composition includes a solvent, and a polysiloxane resin represented by Chemical Formula 1: {(SiO1.5—Y—SiO1.5)x(SiO2)y(XSiO1.5)z}(OH)e(OR1)f. [Chemical Formula 1]
Abstract translation: 光致抗蚀剂底层组合物包括溶剂和由化学式1表示的聚硅氧烷树脂：{（SiO 1.5-Y-SiO 1.5）x（SiO 2）y（XSiO 1.5）z}（OH）e（OR 1）f 。 [化学式1]
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10.发明申请RESIST UNDERLAYER COMPOSITION AND METHOD OF MANUFACTURING SEMICONDUCTOR INTEGRATED CIRCUIT DEVICES USING THE SAME 审中-公开耐蚀组合物及使用其制造半导体集成电路器件的方法公开(公告)号：US20120270143A1
公开(公告)日：2012-10-25
申请号：US13539894
申请日：2012-07-02
Applicant: Hui-Chan YUN , Sang-Kyun KIM , Hyeon-Mo CHO , Mi-Young KIM , Sang-Ran KOH , Yong-Jin CHUNG , Jong-Seob KIM
Inventor： Hui-Chan YUN , Sang-Kyun KIM , Hyeon-Mo CHO , Mi-Young KIM , Sang-Ran KOH , Yong-Jin CHUNG , Jong-Seob KIM
IPC: C08L83/04 , G03F7/20 , B32B3/30 , C08K5/3432
CPC classification number: G03F7/0752 , G03F7/094 , G03F7/11
Abstract: A resist underlayer composition, including a solvent, and an organosilane condensation polymerization product including about 10 to about 40 mol % of a structural unit represented by Chemical Formula 1:
Abstract translation: 包括溶剂的抗蚀剂底层组合物和包含由化学式1表示的结构单元的约10至约40mol％的有机硅烷缩聚产物：
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