Invention Application
- Patent Title: METHOD FOR MANUFACTURING RESISTANCE RAM DEVICE
- Patent Title (中): 制造电阻RAM器件的方法
-
Application No.: US12427819Application Date: 2009-04-22
-
Publication No.: US20100167462A1Publication Date: 2010-07-01
- Inventor: Yu Jin LEE
- Applicant: Yu Jin LEE
- Priority: KR10-2008-0137336 20081230
- Main IPC: H01L21/28
- IPC: H01L21/28

Abstract:
Manufacturing a resistance RAM device includes the steps of forming an insulation layer on a semiconductor substrate having a bottom electrode contact; etching the insulation layer to define a hole exposing the bottom electrode contact; depositing sequentially a bottom electrode material layer and a TMO material layer selectively within the hole; depositing a top electrode material layer within the hole and on the insulation layer in such a way as to completely fill the hole in which the bottom electrode material layer and the TMO material layer are formed; removing partial thicknesses of the top electrode material layer and the insulation layer to form a stack pattern comprising a bottom electrode, a TMO, and a top electrode.
Public/Granted literature
- US07833898B2 Method for manufacturing resistance RAM device Public/Granted day:2010-11-16
Information query
IPC分类: