Invention Application
US20100167462A1 METHOD FOR MANUFACTURING RESISTANCE RAM DEVICE 有权
制造电阻RAM器件的方法

  • Patent Title: METHOD FOR MANUFACTURING RESISTANCE RAM DEVICE
  • Patent Title (中): 制造电阻RAM器件的方法
  • Application No.: US12427819
    Application Date: 2009-04-22
  • Publication No.: US20100167462A1
    Publication Date: 2010-07-01
  • Inventor: Yu Jin LEE
  • Applicant: Yu Jin LEE
  • Priority: KR10-2008-0137336 20081230
  • Main IPC: H01L21/28
  • IPC: H01L21/28
METHOD FOR MANUFACTURING RESISTANCE RAM DEVICE
Abstract:
Manufacturing a resistance RAM device includes the steps of forming an insulation layer on a semiconductor substrate having a bottom electrode contact; etching the insulation layer to define a hole exposing the bottom electrode contact; depositing sequentially a bottom electrode material layer and a TMO material layer selectively within the hole; depositing a top electrode material layer within the hole and on the insulation layer in such a way as to completely fill the hole in which the bottom electrode material layer and the TMO material layer are formed; removing partial thicknesses of the top electrode material layer and the insulation layer to form a stack pattern comprising a bottom electrode, a TMO, and a top electrode.
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