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公开(公告)号：US09091725B2
公开(公告)日：2015-07-28
申请号：US12829996
申请日：2010-07-02
Applicant: Joong-Ki Jeong , Yu-Jin Lee , Seung-Jun Lee , Bong-Ha Hwang
Inventor： Joong-Ki Jeong , Yu-Jin Lee , Seung-Jun Lee , Bong-Ha Hwang
CPC classification number: G01R31/309 , G01B11/2531 , G06T7/521
Abstract: An inspection method includes photographing a measurement target to acquire image data for each pixel of the measurement target, acquiring height data for each pixel of the measurement target, acquiring visibility data for each pixel of the measurement target, multiplying the acquired image data by at least one of the height data and the visibility data for each pixel to produce a result value, and setting a terminal area by using the produced result value. Thus, the terminal area may be accurately determined.
Abstract translation: 检查方法包括拍摄测量对象以获取测量对象的每个像素的图像数据，获取测量对象的每个像素的高度数据，获取测量对象的每个像素的可见度数据，至少将所获取的图像数据乘以 为每个像素生成结果值的高度数据和可见度数据之一，以及通过使用所产生的结果值来设置终端区域。 因此，终端区域可以被准确地确定。
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公开(公告)号：US08383437B2
公开(公告)日：2013-02-26
申请号：US13223958
申请日：2011-09-01
Applicant: Ji-Young Park , Shin-Il Choi , Jong-Hyun Choung , Sang Gab Kim , Seon-Il Kim , Sang-Tae Kim , Joon-Woo Lee , Young-Chul Park , Young-Jun Jin , Kyong-Min Kang , Suck-Jun Lee , O-Byoung Kwon , In-Ho Yu , Sang-Hoon Jang , Min-Ki Lim , Yu-Jin Lee
Inventor： Ji-Young Park , Shin-Il Choi , Jong-Hyun Choung , Sang Gab Kim , Seon-Il Kim , Sang-Tae Kim , Joon-Woo Lee , Young-Chul Park , Young-Jun Jin , Kyong-Min Kang , Suck-Jun Lee , O-Byoung Kwon , In-Ho Yu , Sang-Hoon Jang , Min-Ki Lim , Yu-Jin Lee
IPC: H01L21/00
CPC classification number: C09K13/08 , C23F1/18 , C23F1/26 , C23F1/44 , H01L21/32134 , H01L27/1259 , H01L29/41733
Abstract: An etchant according to exemplary embodiments of the present invention includes about 0.5 wt % to about 20 wt % of persulfate, about 0.01 wt % to about 2 wt % of a fluorine compound, about 1 wt % to about 10 wt % of inorganic acid, about 0.5 wt % to about 5 wt % of a cyclic amine compound, about 0.1 wt % to about 5 wt % of a chlorine compound, about 0.05 wt % to about 3 wt % of copper salt, about 0.1 wt % to about 10 wt % of organic acid or organic acid salt, and water.
Abstract translation: 根据本发明的示例性实施方案的蚀刻剂包括约0.5重量％至约20重量％的过硫酸盐，约0.01重量％至约2重量％的氟化合物，约1重量％至约10重量％的无机酸， 约0.5重量％至约5重量％的环胺化合物，约0.1重量％至约5重量％的氯化合物，约0.05重量％至约3重量％的铜盐，约0.1重量％至约10重量％ ％的有机酸或有机酸盐，和水。
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公开(公告)号：US20120134420A1
公开(公告)日：2012-05-31
申请号：US13302998
申请日：2011-11-22
Applicant: Sung-Jae Cho , Yu-Jin Lee , Hyun-Soo Kim
Inventor： Sung-Jae Cho , Yu-Jin Lee , Hyun-Soo Kim
IPC: H04N7/26
CPC classification number: H04N19/17 , H04N19/129 , H04N19/137 , H04N19/154 , H04N19/162 , H04N19/176
Abstract: An apparatus and method transmit video data in a video device. The apparatus includes a controller and an encoding unit. The controller is configured to control the encoding unit, divide a video data input screen into a plurality of regions, and transmit encoded data on the divided videos to a remote system. The encoding unit is configured to encode the divided videos into video data.
Abstract translation: 一种在视频设备中发送视频数据的装置和方法。 该装置包括控制器和编码单元。 控制器被配置为控制编码单元，将视频数据输入屏幕划分为多个区域，并将分割的视频上的编码数据发送到远程系统。 编码单元被配置为将分割的视频编码为视频数据。
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公开(公告)号：US20110147694A1
公开(公告)日：2011-06-23
申请号：US12971583
申请日：2010-12-17
Applicant: Seok-Pyo SONG , Yu-Jin Lee
Inventor： Seok-Pyo SONG , Yu-Jin Lee
CPC classification number: H01L45/04 , H01L27/101 , H01L45/145
Abstract: A resistive memory device includes a plurality of resistive units, each resistive unit including: a lower electrode formed over a substrate; a resistive layer formed over the lower electrode; and an upper electrode formed over the resistive layer, wherein edge parts of the lower and upper electrodes, which come in contact with the resistive layer, is formed with a rounding shape.
Abstract translation: 电阻式存储器件包括多个电阻单元，每个电阻单元包括：形成在衬底上的下电极; 形成在下电极上的电阻层; 以及形成在电阻层上的上电极，其中与电阻层接触的下电极和上电极的边缘部分形成为圆形。
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公开(公告)号：US20110095259A1
公开(公告)日：2011-04-28
申请号：US12697507
申请日：2010-02-01
Applicant: Yu-Jin Lee
Inventor： Yu-Jin Lee
IPC: H01L45/00
CPC classification number: H01L45/1233 , H01L45/08 , H01L45/146 , H01L45/1641
Abstract: A resistance changing device includes a resistive layer of a hetero structure interposed between a lower electrode and an upper electrode, and including a plurality of resistive material layers, each having a different resistivity, stacked therein, wherein resistivities of the resistive material layers decrease from the lower electrode toward the upper electrode. Since the resistive layer has a hetero structure in which a plurality of resistive material layers, each having a different resistivity, are stacked in such a manner that the resistivity decreases as it goes from the lower electrode to the upper electrode, it is possible to improve the distributions of the set/reset voltage and the set/reset current, while reducing a reset current of a resistance changing device at the same time.
Abstract translation: 电阻改变装置包括插入在下电极和上电极之间的异质结构的电阻层，并且包括堆叠在其中的电阻率不同的多个电阻材料层，其中电阻材料层的电阻率从 下电极朝向上电极。 由于电阻层具有异质结构，其中，具有不同电阻率的多个电阻材料层以这样的方式堆叠，使得电阻随着从下电极到上电极的降低而降低，可以提高 设置/复位电压和设置/复位电流的分布，同时减少电阻变化器件的复位电流。
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Patent Agency Ranking
公开(公告)号：US20110002529A1
公开(公告)日：2011-01-06
申请号：US12829670
申请日：2010-07-02
Applicant: Joong-Ki Jeong , Yu-Jin Lee , Seung-Jun Lee
Inventor： Joong-Ki Jeong , Yu-Jin Lee , Seung-Jun Lee
IPC: G06K9/00
CPC classification number: G06T7/001 , G01B11/25 , G01B11/2531 , G06K9/6202 , G06T7/521
Abstract: An inspection method for inspecting a device mounted on a substrate, includes generating a shape template of the device, acquiring height information of each pixel by projecting grating pattern light onto the substrate through a projecting section, generating a contrast map corresponding to the height information of each pixel, and comparing the contrast map with the shape template. Thus, a measurement object may be exactly extracted.
Abstract translation: 一种用于检查安装在基板上的装置的检查方法，包括：生成装置的形状模板，通过投影部分将光栅图案光投影到基板上，获取每个像素的高度信息，生成对应于 每个像素，并将对比度图与形状模板进行比较。 因此，可以精确地提取测量对象。
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公开(公告)号：US20100252530A1
公开(公告)日：2010-10-07
申请号：US12721903
申请日：2010-03-11
Applicant: Robert Jeffrey Durante , Seung Jin Lee , Thomas Peter Tufano , Young Chul Park , Jun Woo Lee , Seung Yong Lee , Hyun Kyu Lee , Yu Jin Lee , Sang Hoon Jang
Inventor： Robert Jeffrey Durante , Seung Jin Lee , Thomas Peter Tufano , Young Chul Park , Jun Woo Lee , Seung Yong Lee , Hyun Kyu Lee , Yu Jin Lee , Sang Hoon Jang
CPC classification number: C23F1/18 , C23F1/02 , C23F1/26 , C23F1/44 , H01L21/32134 , H05K3/067 , H05K3/388
Abstract: The present invention provides an etchant composition comprising A) high strength potassium monopersulfate providing from about 0.025% to about 0.8% by weight of active oxygen; B) from about 0.01% to about 30% by weight of the composition of B1) an organic acid, alkali metal salt of an organic acid, ammonium salt of an organic acid, or a homopolymer of an organic acid, or B2) a halogen or nitrate salt of phosphonium, tetrazolium, or benzolium, or B3) a mixture of component B1) and B2); and C) from about 0% to about 97.49% by weight of the composition of water; and a method of etching a substrate using said composition.
Abstract translation: 本发明提供一种蚀刻剂组合物，其包含A）高强度单硫酸钾，其提供约0.025重量％至约0.8重量％的活性氧; B）占组合物重量的约0.01％至约30％B1）有机酸，有机酸的碱金属盐，有机酸的铵盐或有机酸的均聚物，或B2）卤素 或鏻，四唑或苯并三唑的硝酸盐，或B3）组分B1）和B2的混合物）; 和C）占组合物水重量的约0％至约97.49％; 以及使用所述组合物蚀刻衬底的方法。
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公开(公告)号：US20100019219A1
公开(公告)日：2010-01-28
申请号：US12411128
申请日：2009-03-25
Applicant: Yu-Jin Lee
Inventor： Yu-Jin Lee
CPC classification number: H01L45/08 , H01L45/1233 , H01L45/1253 , H01L45/145 , H01L45/146 , H01L45/147
Abstract: A resistive memory device and a method for manufacturing the same are disclosed. The resistive memory device includes a lower electrode formed over a substrate, a resistive layer disposed over the lower electrode, an upper electrode formed over the resistive layer, and an oxygen-diffusion barrier pattern provided in an interface between the resistive layer and the upper electrode. The above-described resistive memory device and a method for manufacturing the same may prevent the out diffusion of oxygen in the interface of the upper electrode to avoid set-stuck phenomenon occurring upon the operation of the resistive memory device, thereby improving the endurance of the resistive memory device.
Abstract translation: 公开了一种电阻式存储器件及其制造方法。 电阻性存储器件包括形成在衬底上的下电极，设置在下电极上的电阻层，形成在电阻层上的上电极，以及设置在电阻层和上电极之间的界面中的氧扩散阻挡图案 。 上述电阻式存储器件及其制造方法可以防止上电极的界面中的氧的扩散，以避免在电阻式存储器件的操作时发生的固定现象，从而提高 电阻式存储器件。
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公开(公告)号：US20080023755A1
公开(公告)日：2008-01-31
申请号：US11819858
申请日：2007-06-29
Applicant: Yu Jin Lee
Inventor： Yu Jin Lee
IPC: H01L29/78 , H01L21/3205
CPC classification number: H01L29/4236 , H01L21/76232 , H01L21/763 , H01L21/823807 , H01L21/823828 , H01L27/10876 , H01L29/66621
Abstract: A method for fabricating a semiconductor device is provided. In the method, a bulb type recess is formed on a semiconductor substrate in an active region. A gate insulating film is formed over the semiconductor substrate and on a surface of the recess. A first polysilicon layer is formed over the gate insulating film. A silicon-on-dielectric (“SOD”) barrier film is formed on the first polysilicon layer at a lower part of the recess. A second polysilicon layer is formed over the semiconductor substrate and filling the recess. Impurity ions are injected into the second polysilicon layer. An annealing process is performed on the semiconductor substrate. A metal layer and a gate hard mask layer is formed and patterned over the second polysilicon layer to form a gate including the SOD barrier film.
Abstract translation: 提供一种制造半导体器件的方法。 在该方法中，在活性区域中的半导体衬底上形成灯泡型凹部。 在半导体衬底上和凹部的表面上形成栅极绝缘膜。 在栅绝缘膜上形成第一多晶硅层。 在凹部的下部的第一多晶硅层上形成有硅上电介质（“SOD”）阻挡膜。 第二多晶硅层形成在半导体衬底上并填充凹槽。 杂质离子注入第二多晶硅层。 对半导体基板进行退火处理。 在第二多晶硅层上形成并图案化金属层和栅极硬掩模层，以形成包括SOD阻挡膜的栅极。
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10.发明申请公开(公告)号：US20120252148A1
公开(公告)日：2012-10-04
申请号：US13223958
申请日：2011-09-01
Applicant: Ji-Young PARK , Shin-Il CHOI , Jong-Hyun CHOUNG , Sang Gab KIM , Seon-Il KIM , Sang-Tae KIM , Joon-Woo LEE , Young-Chul PARK , Young-Jun JIN , Kyong-Min KANG , Suck-Jun LEE , O-Byoung KWON , In-Ho YU , Sang-Hoon JANG , Min-Ki LIM , Yu-Jin LEE
Inventor： Ji-Young PARK , Shin-Il CHOI , Jong-Hyun CHOUNG , Sang Gab KIM , Seon-Il KIM , Sang-Tae KIM , Joon-Woo LEE , Young-Chul PARK , Young-Jun JIN , Kyong-Min KANG , Suck-Jun LEE , O-Byoung KWON , In-Ho YU , Sang-Hoon JANG , Min-Ki LIM , Yu-Jin LEE
CPC classification number: C09K13/08 , C23F1/18 , C23F1/26 , C23F1/44 , H01L21/32134 , H01L27/1259 , H01L29/41733
Abstract: An etchant according to exemplary embodiments of the present invention includes about 0.5 wt % to about 20 wt % of persulfate, about 0.01 wt % to about 2 wt % of a fluorine compound, about 1 wt % to about 10 wt % of inorganic acid, about 0.5 wt % to about 5 wt % of a cyclic amine compound, about 0.1 wt % to about 5 wt % of a chlorine compound, about 0.05 wt % to about 3 wt % of copper salt, about 0.1 wt % to about 10 wt % of organic acid or organic acid salt, and water.
Abstract translation: 根据本发明的示例性实施方案的蚀刻剂包括约0.5重量％至约20重量％的过硫酸盐，约0.01重量％至约2重量％的氟化合物，约1重量％至约10重量％的无机酸， 约0.5重量％至约5重量％的环胺化合物，约0.1重量％至约5重量％的氯化合物，约0.05重量％至约3重量％的铜盐，约0.1重量％至约10重量％ ％的有机酸或有机酸盐，和水。
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