发明申请
- 专利标题： NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR MANUFACTURING SAME
- 专利标题（中）： 非易失性半导体存储器件及其制造方法
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申请号： US12638480申请日： 2009-12-15
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公开(公告)号： US20100181612A1公开(公告)日： 2010-07-22
- 发明人: Masaru Kito , Masaru Kidoh , Tomoko Fujiwara , Yosuke Komori , Megumi Ishiduki , Hiroyasu Tanaka , Yoshiaki Fukuzumi , Ryota Katsumata , Ryouhei Kirisawa , Junya Matsunami , Hideaki Aochi
- 申请人： Masaru Kito , Masaru Kidoh , Tomoko Fujiwara , Yosuke Komori , Megumi Ishiduki , Hiroyasu Tanaka , Yoshiaki Fukuzumi , Ryota Katsumata , Ryouhei Kirisawa , Junya Matsunami , Hideaki Aochi
- 申请人地址： JP Tokyo
- 专利权人： KABUSHIKI KAISHA TOSHIBA
- 当前专利权人： KABUSHIKI KAISHA TOSHIBA
- 当前专利权人地址： JP Tokyo
- 优先权： JP2009-012052 20090122
- 主分类号： H01L29/788
- IPC分类号： H01L29/788 ; H01L21/205 ; H01L21/336
摘要：
A nonvolatile semiconductor memory device includes: forming a stacked body by alternately stacking a plurality of interlayer insulating films and a plurality of control gate electrodes; forming a through-hole extending in a stacking direction in the stacked body; etching a portion of the interlayer insulating film facing the through-hole via the through-hole to remove the portion; forming a removed portion; forming a first insulating film on inner faces of the through-hole and the portion in which the interlayer insulating films are removed; forming a floating gate electrode in the portion in which the interlayer insulating films are removed; forming a second insulating film so as to cover a portion of the floating gate electrode facing the through-hole; and burying a semiconductor pillar in the through-hole.
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