发明申请
- 专利标题: PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD
- 专利标题(中): 等离子体加工设备和等离子体处理方法
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申请号: US12663764申请日: 2008-06-11
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公开(公告)号: US20100183827A1公开(公告)日: 2010-07-22
- 发明人: Masaki Hirayama , Tadahiro Ohmi , Takahiro Horiguchi
- 申请人: Masaki Hirayama , Tadahiro Ohmi , Takahiro Horiguchi
- 申请人地址: JP Tokyo JP Sendai-shi, Miyagi
- 专利权人: TOKYO ELECTRON LIMITED,TOHOKU UNIVERSITY
- 当前专利权人: TOKYO ELECTRON LIMITED,TOHOKU UNIVERSITY
- 当前专利权人地址: JP Tokyo JP Sendai-shi, Miyagi
- 优先权: JP2007-153580 20070611
- 国际申请: PCT/JP2008/060692 WO 20080611
- 主分类号: H05H1/46
- IPC分类号: H05H1/46 ; C23C16/511
摘要:
A plasma processing apparatus capable of reducing the use amount of a dielectric member is provided. The plasma processing apparatus 1 includes a metal processing chamber 4 configured to accommodate therein a substrate G to be plasma-processed; an electromagnetic wave source 34 that supplies an electromagnetic wave necessary to excite plasma in the processing chamber 4; one or more dielectric members 25 provided on a bottom surface of a cover 3 of the processing chamber 4 and configured to transmit the electromagnetic wave supplied from the electromagnetic wave source 34 into the inside of the processing chamber 4, a portion of each dielectric member 25 being exposed to the inside of the processing chamber 4; and a surface wave propagating section 51 installed adjacent to the dielectric member 25 and configured to propagate the electromagnetic wave along a metal surface exposed to the inside of the processing chamber 4.
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