公开(公告)号：US07934468B2

公开(公告)日：2011-05-03

申请号：US11762472

申请日：2007-06-13

申请人： Takahiro Horiguchi

发明人： Takahiro Horiguchi

IPC分类号： C23C16/00 ,  C23F1/00 ,  H01L21/306

CPC分类号： C23C16/511 ,  C23C16/45565 ,  H01J37/32192 ,  H01J37/32229

摘要： Microwaves propagated through the waveguide 30, a plurality of slots 31 and the dielectric members 33 in this order are supplied into the processing chamber U where they are used to excite a gas to plasma to be used to process a substrate G. Alumina 50 fills an area inside the waveguide 30 near an end surface C thereof, and the remaining area inside the waveguide is filled with Teflon 35. Since the alumina 50 has a smaller guide wavelength λg compared to the Teflon 35, the mechanical length measured from the end surface C of the waveguide 30 to the center of the closest slot is reduced compared to the mechanical length of a waveguide filled only with Teflon 35 while maintaining the physical characteristic length from the end surface C to the closest slot center at λg/4.

摘要翻译： 通过波导30传播的微波，多个狭缝31和电介质构件33依次被提供到处理室U中，在那里它们被用于激发用于处理衬底G的等离子体的气体。氧化铝50填充 波导管30的靠近其端面C的区域内，波导内的其余区域填充有特氟龙35.由于氧化铝50与特氟龙35相比具有较小的导向波长λg，所以从端面C测量的机械长度 相对于仅用特氟隆35填充的波导的机械长度，相对于最接近的槽的中心减小，同时保持从端面C到最接近的槽中心的物理特性长度为λg/ 4。

公开(公告)号：US06660097B2

公开(公告)日：2003-12-09

申请号：US09884985

申请日：2001-06-21

申请人： Takahiro Horiguchi

发明人： Takahiro Horiguchi

IPC分类号： C23C1600

CPC分类号： H01L21/67011 ,  C23C16/4581 ,  C23C16/4586

摘要： A single-substrate-processing apparatus includes an airtight process chamber in which a ceramic worktable is supported by a ceramic pedestal. The bottom of the pedestal is provided with a flange, which is attached to the bottom of the process chamber by a flange holder. The flange holder has upper and lower frames sandwiching the flange therebetween. The flange holder is detachably fixed by fixing bolts to the bottom of the process chamber from outside the process chamber.

摘要翻译： 单基板处理装置包括气密处理室，其中陶瓷工作台由陶瓷基座支撑。 基座的底部设有凸缘，凸缘通过凸缘保持器附接到处理室的底部。 凸缘保持器具有夹在其间的凸缘的上框架和下框架。 法兰座通过从处理室外部固定螺栓可拆卸地固定在处理室的底部。

公开(公告)号：US06506257B2

公开(公告)日：2003-01-14

申请号：US09870798

申请日：2001-06-01

申请人： Takahiro Horiguchi ,  Naofumi Oda ,  Hiroshi Kaneko

发明人： Takahiro Horiguchi ,  Naofumi Oda ,  Hiroshi Kaneko

IPC分类号： C23C1600

CPC分类号： H01L21/67017

摘要： A single-substrate-processing apparatus includes an airtight process chamber in which a worktable is supported by a pedestal. The worktable has a mount face on which a plurality of ventilation grooves are formed. A plurality of ventilation holes and three lifter holes for lifter pins are formed vertically through the worktable. The gap space between the wafer and the mount face communicates with the inner space of the process chamber around the worktable and the wafer, through the ventilation grooves, the ventilation holes, and the lifter holes.

公开(公告)号：US07723637B2

公开(公告)日：2010-05-25

申请号：US11592253

申请日：2006-11-03

申请人： Tadahiro Ohmi ,  Masaki Hirayama ,  Takahiro Horiguchi

发明人： Tadahiro Ohmi ,  Masaki Hirayama ,  Takahiro Horiguchi

IPC分类号： B23K10/00

CPC分类号： H05H1/46 ,  H01J37/32192 ,  H01J37/32229

摘要： The purpose of the present invention is to provide homogeneous plasma in longitudinal direction of a plasma processing apparatus applicable to multiple processes. A microwave waveguide 10 with a plurality of variable couplers 12 is placed in a vacuum chamber 21. The microwave generated in a microwave generator 23 is introduced into the microwave waveguide 10 via a waveguide 24. And a plasma 22 in the chamber 21 is generated by the microwave 25. Intensity distribution of the microwave 25 in the microwave waveguide 10 can be varied by moving a plurality of variable couplers 12 individually upward or downward as shown by two-way arrow.

摘要翻译： 本发明的目的是提供适用于多个工艺的等离子体处理装置的纵向均匀等离子体。 具有多个可变耦合器12的微波波导10被放置在真空室21中。在微波发生器23中产生的微波通过波导管24被引入微波波导10中。室21中的等离子体22由 微波25.微波25中的微波25的强度分布可以通过单独向上或向下移动多个可变耦合器12来改变，如双向箭头所示。

公开(公告)号：US07655111B2

公开(公告)日：2010-02-02

申请号：US11653895

申请日：2007-01-17

申请人： Takahiro Horiguchi

发明人： Takahiro Horiguchi

IPC分类号： C23C16/00 ,  C23F1/00 ,  H01L21/306

CPC分类号： H01J37/3244 ,  H01J37/32192

摘要： At a frame 26 in a microwave plasma processing apparatus 100, numerous horizontal spray gas nozzles 27 formed therein injection holes A and numerous vertical gas nozzles 28 formed therein injection holes B are fixed. A first gas supply means 50 injects argon gas through the injection holes A into an area near each dielectric parts 31a. A second gas supply means 55 injects silane gas and hydrogen gas through the injection holes B into a position at which the gases do not become over-dissociated. The gases injected as described above are raised to plasma with a microwave transmitted through each dielectric parts 31a. Since the vertical gas nozzles 28 are mounted at positions at which they do not block the flow of plasma traveling toward a substrate G, ions and electrons do not collide with the vertical gas nozzles 28 readily.

摘要翻译： 在微波等离子体处理装置100中的框架26处，固定有形成有喷射孔A的多个水平喷雾气体喷嘴27和形成在其中的多个垂直气体喷嘴28。 第一气体供给装置50通过喷射孔A将氩气注入到每个电介质部分31a附近的区域中。 第二气体供给装置55将硅烷气体和氢气通过喷射孔B喷射到不会过度离解气体的位置。 如上所述注入的气体通过每个电介质部分31a传输的微波升至等离子体。 由于垂直气体喷嘴28安装在不阻挡向衬底G行进的等离子体流动的位置，所以离子和电子不会容易地与垂直气体喷嘴28碰撞。

公开(公告)号：US07432468B2

公开(公告)日：2008-10-07

申请号：US11694102

申请日：2007-03-30

申请人： Shinsuke Oka ,  Takahiro Horiguchi ,  Kazuaki Nishimura ,  Masayuki Kitamura ,  Tadahiro Ohmi ,  Masaki Hirayama

发明人： Shinsuke Oka ,  Takahiro Horiguchi ,  Kazuaki Nishimura ,  Masayuki Kitamura ,  Tadahiro Ohmi ,  Masaki Hirayama

IPC分类号： B23K10/00

CPC分类号： H05H1/46 ,  H01J37/32192 ,  H01J37/32238

摘要： A microwave plasma processing apparatus 100 allows microwaves, passed through a plurality of slots 37, to be transmitted through a plurality of dielectric parts 31 supported by beams 26, raises a gas to plasma with the transmitted microwaves and processes a substrate G with the plasma. The beams 26 are made to project out toward the substrate so as to ensure that the plasma electron density Ne around the ends of the beams 26 is equal to or greater than a cutoff plasma electron density Nc. The projecting beams 26 inhibits interference attributable to surface waves generated with the electrical field energy of microwaves transmitted through adjacent dielectric parts 31 and interference attributable to electrons and ions propagated through the plasma generated under a given dielectric part 31 to reach the plasma generated under an adjacent dielectric part as the plasma generated under the individual dielectric parts 31 is diffused.

摘要翻译： 微波等离子体处理装置100允许通过多个狭槽37的微波透过由梁26支撑的多个电介质部分31，并使透射的微波将气体升高到等离子体并用等离子体处理衬底G. 使梁26朝向基板突出，以确保梁26的端部周围的等离子体电子密度Ne等于或大于截止等离子体电子密度Nc。 投影光束26抑制归因于通过相邻电介质部件31传播的微波的电场能产生的表面波的干扰，以及由在给定电介质部分31下产生的等离子体传播的电子和离子产生的干扰，以达到在相邻电介质部分31之下产生的等离子体 作为在各个电介质部31下产生的等离子体的介质部分扩散。

公开(公告)号：US20070235425A1

公开(公告)日：2007-10-11

申请号：US11694102

申请日：2007-03-30

申请人： Shinsuke Oka ,  Takahiro Horiguchi ,  Kazuaki Nishimura ,  Masayuki Kitamura ,  Tadahiro Ohmi ,  Masaki Hirayama

发明人： Shinsuke Oka ,  Takahiro Horiguchi ,  Kazuaki Nishimura ,  Masayuki Kitamura ,  Tadahiro Ohmi ,  Masaki Hirayama

IPC分类号： B23K9/00

CPC分类号： H05H1/46 ,  H01J37/32192 ,  H01J37/32238

摘要： A microwave plasma processing apparatus 100 allows microwaves, passed through a plurality of slots 37, to be transmitted through a plurality of dielectric parts 31 supported by beams 26, raises a gas to plasma with the transmitted microwaves and processes a substrate G with the plasma. The beams 26 are made to project out toward the substrate so as to ensure that the plasma electron density Ne around the ends of the beams 26 is equal to or greater than a cutoff plasma electron density Nc. The projecting beams 26 inhibits interference attributable to surface waves generated with the electrical field energy of microwaves transmitted through adjacent dielectric parts 31 and interference attributable to electrons and ions propagated through the plasma generated under a given dielectric part 31 to reach the plasma generated under an adjacent dielectric part as the plasma generated under the individual dielectric parts 31 is diffused.

摘要翻译： 微波等离子体处理装置100允许通过多个狭槽37的微波透过由梁26支撑的多个电介质部分31，并使透射的微波将气体升高到等离子体并用等离子体处理衬底G. 使梁26朝向基板突出，以确保梁26的端部周围的等离子体电子密度Ne等于或大于截止等离子体电子密度Nc。 投影光束26抑制归因于通过相邻电介质部件31传播的微波的电场能产生的表面波的干扰，以及由在给定电介质部分31下产生的等离子体传播的电子和离子产生的干扰，以达到在相邻电介质部分31之下产生的等离子体 作为在各个电介质部31下产生的等离子体的介质部分扩散。

公开(公告)号：US20070227661A1

公开(公告)日：2007-10-04

申请号：US11694011

申请日：2007-03-30

申请人： Takahiro HORIGUCHI

发明人： Takahiro HORIGUCHI

IPC分类号： B44C1/22 ,  C23F1/00 ,  C23C16/00

CPC分类号： C23C16/402 ,  C23C16/511 ,  H01J37/32192 ,  H01J37/32238 ,  H01J37/32522

摘要： A microwave plasma processing apparatus 100 includes a processing chamber U, a plurality of dielectric parts 31 that allow microwaves to be transmitted into the processing chamber U, a beam 27 that supports the dielectric parts 31 and a fixing means for fixing the beam 27 to a processing container from outside the processing chamber U. The fixing means includes a plurality of screws 56 that are inserted at a plurality of through holes 21b present at the processing chamber U from the outside of the processing chamber U to interlock with the beam 27. Since the beam 27 is fixed to the processing chamber U via the plurality of screws 56 from the outside of the processing chamber U, better smoothness and flatness is achieved at the surface S of the beam 27 which comes in contact with plasma.

摘要翻译： 微波等离子体处理装置100包括处理室U，允许微波传输到处理室U中的多个电介质部分31，支撑电介质部分31的光束27和用于将光束27固定到固定装置的固定装置 处理容器从处理室U的外部。固定装置包括多个螺钉56，多个螺钉56从处理室U的外部插入处理室U处的多个通孔21b，以与梁27互锁。 由于梁27从处理室U的外部经由多个螺钉56固定到处理室U，所以在与等离子体接触的梁27的表面S处获得更好的平滑度和平坦度。

公开(公告)号：US20070181531A1

公开(公告)日：2007-08-09

申请号：US11671787

申请日：2007-02-06

申请人： Takahiro Horiguchi ,  Tadahiro Ohmi ,  Masaki Hirayama

发明人： Takahiro Horiguchi ,  Tadahiro Ohmi ,  Masaki Hirayama

IPC分类号： C23F1/00 ,  H01L21/306 ,  H01L21/302 ,  H01L21/461 ,  B44C1/22

CPC分类号： C23C16/24 ,  C23C16/45568 ,  C23C16/511 ,  H01J37/32192 ,  H01J37/32238 ,  H01J37/3244

摘要： A microwave plasma processing apparatus 100 includes a plurality of dielectric parts 31, through which microwaves are transmitted via a slot, and gas nozzles 27 disposed at positions lower than the dielectric parts 31. The dielectric parts 31 and the gas nozzles 27 are each constituted with a porous portion and a dense portion. A first gas supply unit supplies argon gas into a processing chamber through porous portions 31P at the individual dielectric parts 31. A second gas supply unit supplies silane gas and hydrogen gas into the processing chamber through porous portions 27P at the gas nozzles 27. The gases decelerate as they travel through the porous portions and, as a result, excessive agitation in the gases can be inhibited. Consequently, uniform plasma is generated and a high quality amorphous silicon film can be formed with the plasma.

摘要翻译： 微波等离子体处理装置100包括多个电介质部31，微波经由狭槽传播，并且设置在低于介质部31的位置的气体喷嘴27。 电介质部31和气体喷嘴27分别由多孔部和致密部构成。 第一气体供给单元通过各个电介质部31的多孔部31 P将氩气供给到处理室。 第二气体供给单元通过气体喷嘴27处的多孔部分27 P向处理室供给硅烷气体和氢气。 气体在穿过多孔部分时减速，结果可以抑制气体中的过度搅动。 因此，产生均匀的等离子体，并且可以用等离子体形成高品质的非晶硅膜。

公开(公告)号：US20070163996A1

公开(公告)日：2007-07-19

申请号：US11653895

申请日：2007-01-17

申请人： Takahiro Horiguchi

发明人： Takahiro Horiguchi

IPC分类号： C23F1/00 ,  H01L21/302 ,  H01L21/306 ,  C03C15/00 ,  B44C1/22

CPC分类号： H01J37/3244 ,  H01J37/32192

摘要： At a frame 26 in a microwave plasma processing apparatus 100, numerous horizontal spray gas nozzles 27 formed therein injection holes A and numerous vertical gas nozzles 28 formed therein injection holes B are fixed. A first gas supply means 50 injects argon gas through the injection holes A into an area near each dielectric parts 31a. A second gas supply means 55 injects silane gas and hydrogen gas through the injection holes B into a position at which the gases do not become over-dissociated. The gases injected as described above are raised to plasma with a microwave transmitted through each dielectric parts 31a. Since the vertical gas nozzles 28 are mounted at positions at which they do not block the flow of plasma traveling toward a substrate G, ions and electrons do not collide with the vertical gas nozzles 28 readily.

摘要翻译： 在微波等离子体处理装置100中的框架26处，固定有形成有喷射孔A的多个水平喷雾气体喷嘴27和形成在其中的多个垂直气体喷嘴28。 第一气体供给装置50通过喷射孔A将氩气注入到每个电介质部分31a附近的区域中。 第二气体供给装置55将硅烷气体和氢气通过喷射孔B喷射到不会过度离解气体的位置。 如上所述注入的气体通过透过每个电介质部分31a的微波升至等离子体。 由于垂直气体喷嘴28安装在不阻挡向衬底G行进的等离子体流动的位置，所以离子和电子不会容易地与垂直气体喷嘴28碰撞。