METHOD OF FORMING SILICON OXIDE FILM AND METHOD OF PRODUCTION OF SEMICONDUCTOR MEMORY DEVICE USING THIS METHOD

Invention Application

US20100184267A1 METHOD OF FORMING SILICON OXIDE FILM AND METHOD OF PRODUCTION OF SEMICONDUCTOR MEMORY DEVICE USING THIS METHOD 有权

Title translation: 形成硅氧烷膜的方法和使用该方法生产半导体存储器件的方法

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Patent Title: METHOD OF FORMING SILICON OXIDE FILM AND METHOD OF PRODUCTION OF SEMICONDUCTOR MEMORY DEVICE USING THIS METHOD
Patent Title (中): 形成硅氧烷膜的方法和使用该方法生产半导体存储器件的方法
Application No.: US12550788

Application Date: 2009-08-31
Publication No.: US20100184267A1

Publication Date: 2010-07-22
Inventor: Yoshiro Kabe , Junichi Kitagawa , Kikuo Yamabe
Applicant: Yoshiro Kabe , Junichi Kitagawa , Kikuo Yamabe
Applicant Address: JP Tokyo JP Ibaraki
Assignee: TOKYO ELECTRON LIMITED,University of Tsukuba
Current Assignee: TOKYO ELECTRON LIMITED,University of Tsukuba
Current Assignee Address: JP Tokyo JP Ibaraki
Priority: JP2009-011027 20090121
Main IPC: H01L21/316
IPC: H01L21/316 ; H01L21/762

METHOD OF FORMING SILICON OXIDE FILM AND METHOD OF PRODUCTION OF SEMICONDUCTOR MEMORY DEVICE USING THIS METHOD

Abstract:

To form a good quality silicon oxide film provided with both a superior Qbd characteristic and Rd characteristic, a wafer W is loaded into a plasma treatment apparatus where the surface of a silicon layer 501 of the wafer W is treated by plasma oxidation to form on the silicon layer 501 to a film thickness T1 a silicon oxide film 503. Next, the wafer W on which the silicon oxide film 503 is formed is transferred to a thermal oxidation treatment apparatus where the silicon oxide film 503 is treated by thermal oxidation to thereby form a silicon oxide film 505 having a target film thickness T2.

Abstract(Chinese):

为了形成具有优异的Qbd特性和Rd特性的优质氧化硅膜，将晶片W装载到等离子体处理装置中，其中通过等离子体氧化处理晶片W的硅层501的表面以形成在硅层501形成膜厚T1，形成氧化硅膜503.接着，将形成有氧化硅膜503的晶片W转移到热氧化处理装置中，通过热氧化处理氧化硅膜503，形成具有目标膜厚度T2的氧化硅膜505。

Public/Granted literature

US08026187B2 Method of forming silicon oxide film and method of production of semiconductor memory device using this method Public/Granted day:2011-09-27

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IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/18	...器件有由周期表Ⅳ族元素或含有/不含有杂质的AⅢBⅤ族化合物构成的半导体，如掺杂材料
H01L21/30	....用H01L21/20至H01L21/26各组不包含的方法或设备处理半导体材料的（在半导体材料上制作电极的入H01L21/28）
H01L21/31	.....在半导体材料上形成绝缘层的，例如用于掩膜的或应用光刻技术的（密封层入H01L21/56）；以及这些层的后处理；这些层的材料的选择
H01L21/314	......无机层（H01L21/3105，H01L21/32优先）
H01L21/316	.......由氧化物或玻璃状氧化物或以氧化物为基础的玻璃组成的无机层