发明申请
- 专利标题： SEMICONDUCTOR DEVICE
- 专利标题（中）： 半导体器件
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申请号： US12716668申请日： 2010-03-03
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公开(公告)号： US20100187497A1公开(公告)日： 2010-07-29
- 发明人: Hajime NAGO , Koichi Tachibana , Shinji Saito , Yoshiyuki Harada , Shinya Nunoue
- 申请人： Hajime NAGO , Koichi Tachibana , Shinji Saito , Yoshiyuki Harada , Shinya Nunoue
- 优先权： JP2008-221471 20080829
- 主分类号： H01L33/32
- IPC分类号： H01L33/32
摘要：
A semiconductor device includes an underlying layer, and a light emitting layer which is formed on the underlying layer and in which a barrier layer made of InAlGaN and a quantum well layer made of InGaN are alternately stacked.
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