发明申请
- 专利标题: Bipolar Junction Transistors and Methods of Fabrication Thereof
- 专利标题(中): 双极结晶体管及其制造方法
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申请号: US12618425申请日: 2009-11-13
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公开(公告)号: US20100187656A1公开(公告)日: 2010-07-29
- 发明人: Po-Yao Ke , Tao-Wen Chung , Shine Chung , Fu-Lung Hsueh
- 申请人: Po-Yao Ke , Tao-Wen Chung , Shine Chung , Fu-Lung Hsueh
- 主分类号: H01L29/73
- IPC分类号: H01L29/73
摘要:
Design and methods for fabricating bipolar junction transistors are described. In one embodiment, a semiconductor device includes a first fin comprising a first emitter region, a first base region, and a first collector region. The first emitter region, the first base region, and the first collector region form a bipolar junction transistor. A second fin is disposed adjacent and parallel to the first fin. The second fin includes a first contact to the first base region.
公开/授权文献
- US08258602B2 Bipolar junction transistors having a fin 公开/授权日:2012-09-04