发明申请
- 专利标题： REDUCING PHOTORESIST LAYER DEGRADATION IN PLASMA IMMERSION ION IMPLANTATION
- 专利标题（中）： 降低等离子体沉积物植入中的光电层降解
-
申请号： US12550142申请日： 2009-08-28
-
公开(公告)号： US20100190324A1公开(公告)日： 2010-07-29
- 发明人: MARTIN A. HILKENE , Kartik Santhanam , Yen B. Ta , Peter I. Porshnev , Majeed A. Foad
- 申请人： MARTIN A. HILKENE , Kartik Santhanam , Yen B. Ta , Peter I. Porshnev , Majeed A. Foad
- 申请人地址： US CA Santa Clara
- 专利权人： Applied Materials, Inc.
- 当前专利权人： Applied Materials, Inc.
- 当前专利权人地址： US CA Santa Clara
- 主分类号： H01L21/265
- IPC分类号： H01L21/265
摘要：
A method of plasma immersion ion implantation of a workpiece having a photoresist mask on its top surface prevents photoresist failure from carbonization of the photoresist. The method includes performing successive ion implantation sub-steps, each of the ion implantation sub-steps having a time duration over which only a fractional top portion of the photoresist layer is damaged by ion implantation. After each one of the successive ion implantation sub-steps, the fractional top portion of the photoresist is removed while leaving the remaining portion of the photoresist layer in place by performing an ashing sub-step. The number of the successive ion implantation sub-steps is sufficient to reach a predetermined ion implantation dose in the workpiece.
公开/授权文献
信息查询
IPC分类:
