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    REDUCING PHOTORESIST LAYER DEGRADATION IN PLASMA IMMERSION ION IMPLANTATION
    1.
    发明申请
    REDUCING PHOTORESIST LAYER DEGRADATION IN PLASMA IMMERSION ION IMPLANTATION 失效
    降低等离子体沉积物植入中的光电层降解

    公开(公告)号：US20100190324A1

    公开(公告)日：2010-07-29

    申请号：US12550142

    申请日：2009-08-28

    申请人： MARTIN A. HILKENE ,  Kartik Santhanam ,  Yen B. Ta ,  Peter I. Porshnev ,  Majeed A. Foad

    发明人： MARTIN A. HILKENE ,  Kartik Santhanam ,  Yen B. Ta ,  Peter I. Porshnev ,  Majeed A. Foad

    IPC分类号： H01L21/265

    CPC分类号： H01L21/2236 ,  H01L21/31138

    摘要： A method of plasma immersion ion implantation of a workpiece having a photoresist mask on its top surface prevents photoresist failure from carbonization of the photoresist. The method includes performing successive ion implantation sub-steps, each of the ion implantation sub-steps having a time duration over which only a fractional top portion of the photoresist layer is damaged by ion implantation. After each one of the successive ion implantation sub-steps, the fractional top portion of the photoresist is removed while leaving the remaining portion of the photoresist layer in place by performing an ashing sub-step. The number of the successive ion implantation sub-steps is sufficient to reach a predetermined ion implantation dose in the workpiece.

    摘要翻译： 在其顶表面上具有光致抗蚀剂掩模的工件的等离子体浸没离子注入的方法防止光致抗蚀剂从光致抗蚀剂的碳化失效。 该方法包括执行连续的离子注入子步骤，每个离子注入子步骤具有仅通过离子注入损坏光致抗蚀剂层的仅部分顶部的持续时间。 在连续离子注入子步骤中的每一个之后，去除光致抗蚀剂的分数顶部，同时通过执行灰化子步骤留下光致抗蚀剂层的剩余部分就位。 连续离子注入子步骤的数量足以在工件中达到预定的离子注入剂量。

    INTEGRATED PLATFORM FOR IN-SITU DOPING AND ACTIVATION OF SUBSTRATES
    3.
    发明申请
    INTEGRATED PLATFORM FOR IN-SITU DOPING AND ACTIVATION OF SUBSTRATES 审中-公开
    集成平台，用于基站的排除和激活

    公开(公告)号：US20120088356A1

    公开(公告)日：2012-04-12

    申请号：US13227034

    申请日：2011-09-07

    申请人： KARTIK SANTHANAM ,  MARTIN A. HILKENE ,  MATTHEW D. SCOTNEY-CASTLE ,  PETER I. PORSHNEV ,  SWAMINATHAN SRINIVASAN ,  SUNDAR RAMAMURTHY

    发明人： KARTIK SANTHANAM ,  MARTIN A. HILKENE ,  MATTHEW D. SCOTNEY-CASTLE ,  PETER I. PORSHNEV ,  SWAMINATHAN SRINIVASAN ,  SUNDAR RAMAMURTHY

    IPC分类号： H01L21/265

    CPC分类号： H01L21/2236 ,  H01L21/324 ,  H01L21/67207

    摘要： An integrated platform for processing substrates, comprising: a vacuum substrate transfer chamber; a doping chamber coupled to the vacuum substrate transfer chamber, the doping chamber configured to implant or deposit dopant elements in or on a surface of a substrate; a dopant activation chamber coupled to the vacuum substrate transfer chamber, the dopant activation chamber configured to anneal the substrate and activate the dopant elements; and a controller configured to control the integrated platform, the controller comprising a computer readable media having instructions stored thereon that, when executed by the controller, causes the integrated platform to perform a method, the method comprising: doping a substrate with one or more dopant elements in the doping chamber; transferring the substrate under vacuum to the dopant activation chamber; and annealing the substrate in the dopant activation chamber to activate the dopant elements.

    摘要翻译： 一种用于处理衬底的集成平台，包括：真空衬底传送室; 耦合到所述真空衬底传送室的掺杂室，所述掺杂室被配置为将掺杂元素注入或沉积在衬底的表面中或其上; 掺杂剂激活室，其耦合到所述真空衬底传送室，所述掺杂剂激活室被配置为退火所述衬底并激活所述掺杂元素; 以及控制器，其被配置为控制所述集成平台，所述控制器包括具有存储在其上的指令的计算机可读介质，当由所述控制器执行时，所述控制器使所述集成平台执行方法，所述方法包括：将衬底与一个或多个掺杂剂 掺杂室中的元素; 将衬底真空转移到掺杂剂活化室; 以及退火所述掺杂剂激活室中的所述衬底以激活所述掺杂元素。

    METHODS FOR QUANTITATIVE MEASUREMENT OF A PLASMA IMMERSION PROCESS
    4.
    发明申请
    METHODS FOR QUANTITATIVE MEASUREMENT OF A PLASMA IMMERSION PROCESS 有权
    用于定量测量等离子体浸没过程的方法

    公开(公告)号：US20130137197A1

    公开(公告)日：2013-05-30

    申请号：US13307319

    申请日：2011-11-30

    申请人： DAPING YAO ,  PETER I. PORSHNEV ,  MARTIN A. HILKENE ,  MATTHEW D. SCOTNEY-CASTLE ,  MANOJ VELLAIKAL

    发明人： DAPING YAO ,  PETER I. PORSHNEV ,  MARTIN A. HILKENE ,  MATTHEW D. SCOTNEY-CASTLE ,  MANOJ VELLAIKAL

    IPC分类号： H01L21/66

    CPC分类号： H01L22/12 ,  H01L21/3115

    摘要： Methods for quantitatively measuring the performance of a plasma immersion process are provided herein. In some embodiments, a method of quantitatively measuring the performance of a plasma immersion process, using a first substrate comprising an oxide layer deposited atop a silicon layer, may include subjecting the first substrate to a plasma immersion process in a first plasma immersion chamber to form a doped oxide layer atop the first substrate; and determining a thickness of the doped oxide layer by shining a beam of light upon a reflective surface of the doped oxide layer; detecting reflected beams of light off of the reflective surface of the doped oxide layer; and analyzing the reflected beams of light to determine the thickness of the doped oxide layer on the first substrate.

    摘要翻译： 本文提供了定量测量等离子浸渍工艺性能的方法。 在一些实施例中，使用包括沉积在硅层上方的氧化物层的第一衬底定量测量等离子体浸渍工艺的性能的方法可包括使第一衬底经受第一等离子体浸没室中的等离子体浸入工艺以形成 在第一衬底顶上的掺杂氧化物层; 以及通过在所述掺杂氧化物层的反射表面上照射光束来确定所述掺杂氧化物层的厚度; 检测来自掺杂氧化物层的反射表面的反射光束; 以及分析反射光束以确定第一衬底上的掺杂氧化物层的厚度。

    METHODS AND APPARATUS FOR CONTROLLING POWER DISTRIBUTION IN SUBSTRATE PROCESSING SYSTEMS
    5.
    发明申请
    METHODS AND APPARATUS FOR CONTROLLING POWER DISTRIBUTION IN SUBSTRATE PROCESSING SYSTEMS 审中-公开
    用于控制基板处理系统中功率分配的方法和装置

    公开(公告)号：US20130014894A1

    公开(公告)日：2013-01-17

    申请号：US13190985

    申请日：2011-07-26

    申请人： CANFENG LAI ,  DAVID E. ABERLE ,  MICHAEL P. KAMP ,  HENRY BARANDICA ,  MARTIN A. HILKENE ,  MATTHEW D. SCOTNEY-CASTLE ,  JEFFREY TOBIN ,  DOUGLAS H. BURNS ,  LARA HAWRYLCHAK ,  PETER I. PORSHNEV

    发明人： CANFENG LAI ,  DAVID E. ABERLE ,  MICHAEL P. KAMP ,  HENRY BARANDICA ,  MARTIN A. HILKENE ,  MATTHEW D. SCOTNEY-CASTLE ,  JEFFREY TOBIN ,  DOUGLAS H. BURNS ,  LARA HAWRYLCHAK ,  PETER I. PORSHNEV

    IPC分类号： C23F1/08 ,  C23C16/52 ,  C23C16/505

    CPC分类号： H01J37/32082 ,  H01J37/321 ,  H01J37/32155 ,  H01J37/32174

    摘要： Methods and apparatus for controlling power distribution in a substrate processing system are provided. In some embodiments, a substrate processing system including a process chamber having a substrate support and a processing region disposed above the substrate support; a first conduit disposed above the processing region to provide a portion of a first toroidal path that extends through the first conduit and across the processing region; a second conduit disposed above the processing region to provide a portion of a second toroidal path that extends through the second conduit and across the processing region; an RF generator coupled to the first and second conduits to provide RF energy having a first frequency to each of the first and second conduits; an impedance matching network disposed between the RF generator and the first and second conduits; and a power divider to control the amount of RF energy provided to the first and second conduits from the RF generator.

    摘要翻译： 提供了一种用于控制基板处理系统中的配电的方法和装置。 在一些实施例中，衬底处理系统包括具有衬底支撑件的处理室和设置在衬底支架上方的处理区域; 设置在所述处理区域上方以提供延伸穿过所述第一管道并横跨所述处理区域的第一环形路径的一部分的第一管道; 设置在所述处理区域上方的第二导管，以提供延伸穿过所述第二导管并横跨所述处理区域的第二环形路径的一部分; 耦合到所述第一和第二导管的RF发生器，以向所述第一和第二导管中的每一个提供具有第一频率的RF能量; 设置在所述RF发生器与所述第一和第二管道之间的阻抗匹配网络; 以及功率分配器，用于控制从RF发生器提供给第一和第二导管的RF能量的量。