公开(公告)号：US07659184B2

公开(公告)日：2010-02-09

申请号：US12072495

申请日：2008-02-25

申请人： Manoj Vellaikal ,  Kartik Santhanam ,  Yen B. Ta ,  Martin A. Hilkene ,  Matthew D. Scotney-Castle ,  Canfeng Lai ,  Peter I. Porshnev ,  Majeed A. Foad

发明人： Manoj Vellaikal ,  Kartik Santhanam ,  Yen B. Ta ,  Martin A. Hilkene ,  Matthew D. Scotney-Castle ,  Canfeng Lai ,  Peter I. Porshnev ,  Majeed A. Foad

IPC分类号： H01L21/20

CPC分类号： H01J37/32477 ,  H01J37/32412 ,  H01J2237/0213 ,  H01J2237/022 ,  H01J2237/16

摘要： In a plasma immersion ion implantation process, the thickness of a pre-implant chamber seasoning layer is increased (to permit implantation of a succession of wafers without replacing the seasoning layer) without loss of wafer clamping electrostatic force due to increased seasoning layer thickness. This is accomplished by first plasma-discharging residual electrostatic charge from the thick seasoning layer. The number of wafers which can be processed using the same seasoning layer is further increased by fractionally supplementing the seasoning layer after each wafer is processed, which may be followed by a brief plasma discharging of the supplemented seasoning before processing the next wafer.

摘要翻译： 在等离子体浸没离子注入工艺中，增加了植入前调节层的厚度（允许植入一系列晶片而不更换调味料层），而不会因调节层厚度的增加而损失晶片夹紧静电力。 这是通过首先等离子体排出来自厚调味层的残留静电电荷来实现的。 在处理每个晶片之后，可以通过分批补充调味层来进一步增加可以使用相同调味料处理的晶片数量，其后可以在加工下一个晶片之前进行补充调味料的短暂等离子体放电。

公开(公告)号：US20090280628A1

公开(公告)日：2009-11-12

申请号：US12503697

申请日：2009-07-15

申请人： Manoj Vellaikal ,  Kartik Santhanam ,  Yen B. Ta ,  Martin A. Hilkene ,  Matthew D. Scotney-Castle ,  Canfeng Lai ,  Peter I. Porshnev ,  Majeed A. Foad

发明人： Manoj Vellaikal ,  Kartik Santhanam ,  Yen B. Ta ,  Martin A. Hilkene ,  Matthew D. Scotney-Castle ,  Canfeng Lai ,  Peter I. Porshnev ,  Majeed A. Foad

IPC分类号： H01L21/26

CPC分类号： H01J37/32477 ,  H01J37/32412 ,  H01J2237/0213 ,  H01J2237/022 ,  H01J2237/16

摘要： In a plasma immersion ion implantation process, the thickness of a pre-implant chamber seasoning layer is increased (to permit implantation of a succession of wafers without replacing the seasoning layer) without loss of wafer clamping electrostatic force due to increased seasoning layer thickness. This is accomplished by first plasma-discharging residual electrostatic charge from the thick seasoning layer. The number of wafers which can be processed using the same seasoning layer is further increased by fractionally supplementing the seasoning layer after each wafer is processed, which may be followed by a brief plasma discharging of the supplemented seasoning before processing the next wafer.

摘要翻译： 在等离子体浸没离子注入工艺中，增加了植入前调节层的厚度（允许植入一系列晶片而不更换调味料层），而不会因调节层厚度的增加而损失晶片夹紧静电力。 这是通过首先等离子体排出来自厚调味层的残留静电电荷来实现的。 在处理每个晶片之后，可以通过分批补充调味层来进一步增加可以使用相同调味料处理的晶片数量，其后可以在加工下一个晶片之前进行补充调味料的短暂等离子体放电。

公开(公告)号：US07968401B2

公开(公告)日：2011-06-28

申请号：US12550142

申请日：2009-08-28

申请人： Martin A. Hilkene ,  Kartik Santhanam ,  Yen B. Ta ,  Peter I. Porshnev ,  Majeed A. Foad

发明人： Martin A. Hilkene ,  Kartik Santhanam ,  Yen B. Ta ,  Peter I. Porshnev ,  Majeed A. Foad

IPC分类号： H01L21/3065 ,  H01L21/336 ,  H01L21/425 ,  H01L21/8238

CPC分类号： H01L21/2236 ,  H01L21/31138

摘要： A method of plasma immersion ion implantation of a workpiece having a photoresist mask on its top surface prevents photoresist failure from carbonization of the photoresist. The method includes performing successive ion implantation sub-steps, each of the ion implantation sub-steps having a time duration over which only a fractional top portion of the photoresist layer is damaged by ion implantation. After each one of the successive ion implantation sub-steps, the fractional top portion of the photoresist is removed while leaving the remaining portion of the photoresist layer in place by performing an ashing sub-step. The number of the successive ion implantation sub-steps is sufficient to reach a predetermined ion implantation dose in the workpiece.

摘要翻译： 在其顶表面上具有光致抗蚀剂掩模的工件的等离子体浸没离子注入的方法防止光致抗蚀剂从光致抗蚀剂的碳化失效。 该方法包括执行连续的离子注入子步骤，每个离子注入子步骤具有仅通过离子注入损坏光致抗蚀剂层的仅部分顶部的持续时间。 在连续离子注入子步骤中的每一个之后，去除光致抗蚀剂的分数顶部，同时通过执行灰化子步骤留下光致抗蚀剂层的剩余部分就位。 连续离子注入子步骤的数量足以在工件中达到预定的离子注入剂量。

公开(公告)号：US20090215251A1

公开(公告)日：2009-08-27

申请号：US12072495

申请日：2008-02-25

申请人： Manoj Vellaikal ,  Kartik Santhanam ,  Yen B. Ta ,  Martin A. Hilkene ,  Matthew D. Scotney-Castle ,  Canfeng Lai ,  Peter I. Porshnev ,  Majeed A. Foad

发明人： Manoj Vellaikal ,  Kartik Santhanam ,  Yen B. Ta ,  Martin A. Hilkene ,  Matthew D. Scotney-Castle ,  Canfeng Lai ,  Peter I. Porshnev ,  Majeed A. Foad

IPC分类号： H01L21/62 ,  G21K5/10

CPC分类号： H01J37/32477 ,  H01J37/32412 ,  H01J2237/0213 ,  H01J2237/022 ,  H01J2237/16

摘要： In a plasma immersion ion implantation process, the thickness of a pre-implant chamber seasoning layer is increased (to permit implantation of a succession of wafers without replacing the seasoning layer) without loss of wafer clamping electrostatic force due to increased seasoning layer thickness. This is accomplished by first plasma-discharging residual electrostatic charge from the thick seasoning layer. The number of wafers which can be processed using the same seasoning layer is further increased by fractionally supplementing the seasoning layer after each wafer is processed, which may be followed by a brief plasma discharging of the supplemented seasoning before processing the next wafer.

公开(公告)号：US20120302048A1

公开(公告)日：2012-11-29

申请号：US13461476

申请日：2012-05-01

申请人： Kartik Santhanam ,  Yen B. Ta ,  Matthew D. Scotney-Castle ,  Manoj Vellaikal ,  Martin A. Hilkene ,  Peter I. Porshnev ,  Majeed A. Foad

发明人： Kartik Santhanam ,  Yen B. Ta ,  Matthew D. Scotney-Castle ,  Manoj Vellaikal ,  Martin A. Hilkene ,  Peter I. Porshnev ,  Majeed A. Foad

IPC分类号： H01L21/265

CPC分类号： H01L21/2236 ,  H01J37/32412 ,  H01L21/32155

摘要： Methods for implanting ions into a substrate by a plasma immersion ion implanting process are provided. In one embodiment, the method for implanting ions into a substrate by a plasma immersion ion implantation process includes providing a substrate into a processing chamber, flowing a gas mixture including a hydride dopant gas and a fluorine-containing dopant gas into the processing chamber, wherein the hydride dopant gas comprises P-type hydride dopant gas, N-type hydride dopant gas, or a combination thereof, and the fluorine-containing dopant gas comprises a P-type or N-type dopant atom, generating a plasma from the gas mixture, and co-implanting ions from the gas mixture into a surface of the substrate.

摘要翻译： 提供了通过等离子体浸没离子注入工艺将离子注入衬底的方法。 在一个实施例中，通过等离子体浸入离子注入工艺将离子注入衬底的方法包括将衬底提供到处理室中，将包括氢化物掺杂剂气体和含氟掺杂剂气体的气体混合物流入处理室，其中 氢化物掺杂剂气体包括P型氢化物掺杂气体，N型氢化物掺杂气体或其组合，并且含氟掺杂剂气体包括P型或N型掺杂剂原子，从气体混合物产生等离子体 并且将来自气体混合物的离子共注入到衬底的表面中。

公开(公告)号：US08003500B2

公开(公告)日：2011-08-23

申请号：US12503697

申请日：2009-07-15

申请人： Manoj Vellaikal ,  Kartik Santhanam ,  Yen B. Ta ,  Martin A. Hilkene ,  Matthew D. Scotney-Castle ,  Canfeng Lai ,  Peter I. Porshnev ,  Majeed A. Foad

发明人： Manoj Vellaikal ,  Kartik Santhanam ,  Yen B. Ta ,  Martin A. Hilkene ,  Matthew D. Scotney-Castle ,  Canfeng Lai ,  Peter I. Porshnev ,  Majeed A. Foad

IPC分类号： H01L21/42

CPC分类号： H01J37/32477 ,  H01J37/32412 ,  H01J2237/0213 ,  H01J2237/022 ,  H01J2237/16

摘要： In a plasma immersion ion implantation process, the thickness of a pre-implant chamber seasoning layer is increased (to permit implantation of a succession of wafers without replacing the seasoning layer) without loss of wafer clamping electrostatic force due to increased seasoning layer thickness. This is accomplished by first plasma-discharging residual electrostatic charge from the thick seasoning layer. The number of wafers which can be processed using the same seasoning layer is further increased by fractionally supplementing the seasoning layer after each wafer is processed, which may be followed by a brief plasma discharging of the supplemented seasoning before processing the next wafer.

摘要翻译： 在等离子体浸没离子注入工艺中，增加了植入前调节层的厚度（允许植入一系列晶片而不更换调味料层），而不会因调节层厚度的增加而损失晶片夹紧静电力。 这是通过首先等离子体排出来自厚调味层的残留静电电荷来实现的。 在处理每个晶片之后，可以通过分批补充调味层来进一步增加可以使用相同调味料处理的晶片数量，其后可以在加工下一个晶片之前进行补充调味料的短暂等离子体放电。

公开(公告)号：US20100190324A1

公开(公告)日：2010-07-29

申请号：US12550142

申请日：2009-08-28

申请人： MARTIN A. HILKENE ,  Kartik Santhanam ,  Yen B. Ta ,  Peter I. Porshnev ,  Majeed A. Foad

发明人： MARTIN A. HILKENE ,  Kartik Santhanam ,  Yen B. Ta ,  Peter I. Porshnev ,  Majeed A. Foad

IPC分类号： H01L21/265

CPC分类号： H01L21/2236 ,  H01L21/31138

摘要： A method of plasma immersion ion implantation of a workpiece having a photoresist mask on its top surface prevents photoresist failure from carbonization of the photoresist. The method includes performing successive ion implantation sub-steps, each of the ion implantation sub-steps having a time duration over which only a fractional top portion of the photoresist layer is damaged by ion implantation. After each one of the successive ion implantation sub-steps, the fractional top portion of the photoresist is removed while leaving the remaining portion of the photoresist layer in place by performing an ashing sub-step. The number of the successive ion implantation sub-steps is sufficient to reach a predetermined ion implantation dose in the workpiece.

摘要翻译： 在其顶表面上具有光致抗蚀剂掩模的工件的等离子体浸没离子注入的方法防止光致抗蚀剂从光致抗蚀剂的碳化失效。 该方法包括执行连续的离子注入子步骤，每个离子注入子步骤具有仅通过离子注入损坏光致抗蚀剂层的仅部分顶部的持续时间。 在连续离子注入子步骤中的每一个之后，去除光致抗蚀剂的分数顶部，同时通过执行灰化子步骤留下光致抗蚀剂层的剩余部分就位。 连续离子注入子步骤的数量足以在工件中达到预定的离子注入剂量。

公开(公告)号：US08354035B2

公开(公告)日：2013-01-15

申请号：US12821400

申请日：2010-06-23

申请人： Martin A. Hilkene ,  Majeed A. Foad ,  Matthew D. Scotney-Castle ,  Roman Gouk ,  Steven Verhaverbeke ,  Peter I. Porshnev

发明人： Martin A. Hilkene ,  Majeed A. Foad ,  Matthew D. Scotney-Castle ,  Roman Gouk ,  Steven Verhaverbeke ,  Peter I. Porshnev

IPC分类号： B44C1/22

CPC分类号： G11B5/84 ,  G03F7/427

摘要： A method of removing resist material from a substrate having a magnetically active surface is provided. The substrate is disposed in a processing chamber and exposed to a fluorine-containing plasma formed from a gas mixture having a reagent, an oxidizing agent, and a reducing agent. A cleaning agent may also be included. The substrate may be cooled by back-side cooling or by a cooling process wherein a cooling medium is provided to the processing chamber while the plasma treatment is suspended. Substrates may be flipped over for two-sided processing, and multiple substrates may be processed concurrently.

摘要翻译： 提供了从具有磁性活性表面的基板去除抗蚀剂材料的方法。 将基板设置在处理室中并暴露于由具有试剂，氧化剂和还原剂的气体混合物形成的含氟等离子体。 还可以包括清洁剂。 衬底可以通过背面冷却或通过冷却过程冷却，其中在等离子体处理被暂停时将冷却介质提供给处理室。 衬底可以翻转以进行双面处理，并且可以同时处理多个衬底。

公开(公告)号：US20110006034A1

公开(公告)日：2011-01-13

申请号：US12821400

申请日：2010-06-23

申请人： Martin A. Hilkene ,  Majeed A. Foad ,  Matthew D. Scotney-Castle ,  Roman Gouk ,  Steven Verhaverbeke ,  Peter I. Porshnev

发明人： Martin A. Hilkene ,  Majeed A. Foad ,  Matthew D. Scotney-Castle ,  Roman Gouk ,  Steven Verhaverbeke ,  Peter I. Porshnev

IPC分类号： G11B5/84

CPC分类号： G11B5/84 ,  G03F7/427

摘要： A method of removing resist material from a substrate having a magnetically active surface is provided. The substrate is disposed in a processing chamber and exposed to a fluorine-containing plasma formed from a gas mixture having a reagent, an oxidizing agent, and a reducing agent. A cleaning agent may also be included. The substrate may be cooled by back-side cooling or by a cooling process wherein a cooling medium is provided to the processing chamber while the plasma treatment is suspended. Substrates may be flipped over for two-sided processing, and multiple substrates may be processed concurrently.

摘要翻译： 提供了从具有磁性活性表面的基板去除抗蚀剂材料的方法。 将基板设置在处理室中并暴露于由具有试剂，氧化剂和还原剂的气体混合物形成的含氟等离子体。 还可以包括清洁剂。 衬底可以通过背面冷却或通过冷却过程冷却，其中在等离子体处理被暂停时将冷却介质提供给处理室。 衬底可以翻转以进行双面处理，并且可以同时处理多个衬底。

公开(公告)号：US20110127156A1

公开(公告)日：2011-06-02

申请号：US12955619

申请日：2010-11-29

申请人： Majeed A. Foad ,  Martin A. Hilkene ,  Peter I. Porshnev ,  Jose Antonio Marin ,  Matthew D. Scotney-Castle

发明人： Majeed A. Foad ,  Martin A. Hilkene ,  Peter I. Porshnev ,  Jose Antonio Marin ,  Matthew D. Scotney-Castle

IPC分类号： C23C14/34

CPC分类号： G11B5/8404

摘要： An apparatus for forming a magnetic pattern in a magnetic storage substrate. A chamber comprises a chamber wall that defines an internal volume, a substrate support in the internal volume of the chamber, a gas distributor disposed in a wall region of the chamber facing the substrate support, a compact energy source for ionizing a portion of the process gas provided to the chamber, and a throttle valve having a z-actuated gate member with a sealing surface for covering an outlet portal of the chamber. Ions are accelerated toward the substrate support by an electrical bias, amplifying the ion density of the process gas. A substrate disposed on the substrate support is bombarded by the ions to alter a magnetic property of the substrate surface.

摘要翻译： 一种用于在磁存储基板中形成磁图案的装置。 室包括限定内部容积的室壁，室的内部体积中的衬底支撑件，布置在面向衬底支撑件的腔室的壁区域中的气体分配器，用于使过程的一部分电离的紧凑能量源 提供给腔室的气体以及具有z致动门构件的节流阀，其具有用于覆盖腔室出口的密封表面。 离子通过电偏压加速朝向衬底支撑，从而放大工艺气体的离子密度。 设置在基板支撑体上的基板被离子轰击以改变基板表面的磁性。