发明申请
- 专利标题： SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
- 专利标题（中）： 半导体器件及其制造方法
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申请号： US12759858申请日： 2010-04-14
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公开(公告)号： US20100193863A1公开(公告)日： 2010-08-05
- 发明人: Hiroshi Inagawa , Nobuo Machida , Kentaro Ooishi
- 申请人： Hiroshi Inagawa , Nobuo Machida , Kentaro Ooishi
- 申请人地址： JP Tokyo JP Tokyo
- 专利权人： RENESAS TECHNOLOGY CORP.,HITACHI ULSI SYSTEMS, CO., LTD.
- 当前专利权人： RENESAS TECHNOLOGY CORP.,HITACHI ULSI SYSTEMS, CO., LTD.
- 当前专利权人地址： JP Tokyo JP Tokyo
- 主分类号： H01L29/78
- IPC分类号： H01L29/78
摘要：
Described is a method for fabricating a semiconductor device having an FET of a trench-gate structure obtained by disposing a conductive layer, which will be a gate, in a trench extended in the main surface of a semiconductor substrate, wherein the upper surface of the trench-gate conductive layer is formed equal to or higher than the main surface of the semiconductor substrate. In addition, the conductive layer of the trench gate is formed to have a substantially flat or concave upper surface and the upper surface is formed equal to or higher than the main surface of the semiconductor substrate. Moreover, after etching of the semiconductor substrate to form the upper surface of the conductive layer of the trench gate equal to or higher than the main surface of the semiconductor substrate, a channel region and a source region are formed by ion implantation. The semiconductor device thus fabricated according to the present invention is free from occurrence of a source offset.
公开/授权文献
- US07910985B2 Semiconductor device and method for fabricating the same 公开/授权日：2011-03-22
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