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发明申请
US20100196592A1 METHODS OF FABRICATING CAPACITORS INCLUDING LOW-TEMPERATURE CAPPING LAYERS 审中-公开
制造电容器的方法，包括低温吸收层

METHODS OF FABRICATING CAPACITORS INCLUDING LOW-TEMPERATURE CAPPING LAYERS
摘要：
In a method of fabricating a capacitor, a lower electrode is formed, and a dielectric layer is formed on the lower electrode. An upper electrode is foamed on the dielectric layer opposite the lower electrode. A low-temperature capping layer is formed on the upper electrode at a temperature of less than about 300° C. Related devices and fabrication methods are also discussed.
摘要（中）：

在制造电容器的方法中，形成下电极，并且在下电极上形成电介质层。 上电极在与下电极相对的电介质层上发泡。 在小于约300℃的温度下，在上电极上形成低温覆盖层。还讨论了相关装置和制造方法。

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