Invention Application
- Patent Title: ELECTROPLATING METHODS AND CHEMISTRIES FOR DEPOSITION OF COPPER-INDIUM-GALLIUM CONTAINING THIN FILMS
- Patent Title (中): 用于沉积含薄膜的铜箔的电镀方法和化学
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Application No.: US12642709Application Date: 2009-12-18
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Publication No.: US20100200050A1Publication Date: 2010-08-12
- Inventor: Serdar Aksu , Mustafa Pinarbasi , Jiaxiong Wang
- Applicant: Serdar Aksu , Mustafa Pinarbasi , Jiaxiong Wang
- Applicant Address: US CA San Jose
- Assignee: SoloPower, Inc.
- Current Assignee: SoloPower, Inc.
- Current Assignee Address: US CA San Jose
- Main IPC: C25D5/10
- IPC: C25D5/10 ; H01L31/02
Abstract:
The present invention provides a method and precursor structure to form a Group IBIIIAIVA solar cell absorber layer. The method includes forming a Group IBIIIAVIA compound layer on a base by forming a precursor layer on the base through electrodepositing three different films, and then reacting the precursor layer with selenium to form the Group IBIIIAVIA compound layer on the base. The three films, described by the precursor layer, include in one embodiment a first alloy film comprising copper, indium and gallium, a second alloy film comprising copper and selenium formed on the first alloy film; and a selenium film formed on the second alloy film.
Public/Granted literature
- US08409418B2 Enhanced plating chemistries and methods for preparation of group IBIIIAVIA thin film solar cell absorbers Public/Granted day:2013-04-02
Information query
