发明申请
- 专利标题： SEMICONDUCTOR DEVICE
- 专利标题（中）： 半导体器件
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申请号： US12764763申请日： 2010-04-21
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公开(公告)号： US20100200936A1公开(公告)日： 2010-08-12
- 发明人: Wataru SAITO , Syotaro Ono , Masakatsu Takashita , Yasuto Sumi , Masaru Izumisawa , Hiroshi Ohta , Wataru Sekine
- 申请人： Wataru SAITO , Syotaro Ono , Masakatsu Takashita , Yasuto Sumi , Masaru Izumisawa , Hiroshi Ohta , Wataru Sekine
- 申请人地址： JP Minato-ku
- 专利权人： KABUSHIKI KAISHA TOSHIBA
- 当前专利权人： KABUSHIKI KAISHA TOSHIBA
- 当前专利权人地址： JP Minato-ku
- 优先权： JP2006-137050 20060516; JP2006-170689 20060620; JP2007-100460 20070406
- 主分类号： H01L29/78
- IPC分类号： H01L29/78
摘要：
A semiconductor device includes: a semiconductor layer of a first conductivity type; a first semiconductor pillar region of the first conductivity type provided on a major surface of the semiconductor layer; a second semiconductor pillar region of a second conductivity type provided adjacent to the first semiconductor pillar region on the major surface of the semiconductor layer, the second semiconductor pillar region forming a periodic arrangement structure substantially parallel to the major surface of the semiconductor layer together with the first semiconductor pillar region; a first main electrode; a first semiconductor region of the second conductivity type; a second semiconductor region of the first conductivity type; a second main electrode; a control electrode; and a high-resistance semiconductor layer provided on the semiconductor layer in an edge termination section surrounding the first semiconductor pillar region and the second semiconductor pillar region. The high-resistance semiconductor layer has a lower dopant concentration than the first semiconductor pillar region. A boundary region is provided between a device central region and the edge termination section. The first semiconductor pillar region and the second semiconductor pillar region adjacent to the high-resistance semiconductor layer in the boundary region have a depth decreasing stepwise toward the edge termination section.