发明申请
- 专利标题: SEMICONDUCTOR CHIPS WITH REDUCED STRESS FROM UNDERFILL AT EDGE OF CHIP
- 专利标题(中): 具有降低应力的半导体芯片
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申请号: US12762404申请日: 2010-04-19
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公开(公告)号: US20100203685A1公开(公告)日: 2010-08-12
- 发明人: Timothy Harrison Daubenspeck , Jeffrey Peter Gambino , Christopher David Muzzy , Wolfgang Sauter
- 申请人: Timothy Harrison Daubenspeck , Jeffrey Peter Gambino , Christopher David Muzzy , Wolfgang Sauter
- 申请人地址: US NY Armonk
- 专利权人: INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人: INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人地址: US NY Armonk
- 主分类号: H01L21/56
- IPC分类号: H01L21/56
摘要:
Structures and methods for forming the same. A semiconductor chip includes a semiconductor substrate and a transistor on the semiconductor substrate. The chip further includes N interconnect layers on top of the semiconductor substrate and being electrically coupled to the transistor, N being a positive integer. The chip further includes a first dielectric layer on top of the N interconnect layers, and a second dielectric layer on top of the first dielectric layer. The second dielectric layer is in direct physical contact with each interconnect layer of the N interconnect layers. The chip further includes an underfill layer on top of the second dielectric layer. The second dielectric layer is sandwiched between the first dielectric layer and the underfill layer. The chip further includes a laminate substrate on top of the underfill layer. The underfill layer is sandwiched between the second dielectric layer and the laminate substrate.
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