发明申请
- 专利标题： Crack Stop and Moisture Barrier
- 专利标题（中）： 破裂停止和防潮
-
申请号： US12766709申请日： 2010-04-23
-
公开(公告)号： US20100203701A1公开(公告)日： 2010-08-12
- 发明人: Sun-Oo Kim , O Seo Park
- 申请人： Sun-Oo Kim , O Seo Park
- 主分类号： H01L21/78
- IPC分类号： H01L21/78 ; H01L21/76
摘要：
A design for a crack stop and moisture barrier for a semiconductor device includes a plurality of discrete conductive features formed at the edge of an integrated circuit proximate a scribe line. The discrete conductive features may comprise a plurality of staggered lines, a plurality of horseshoe-shaped lines, or a combination of both.
公开/授权文献
- US08004066B2 Crack stop and moisture barrier 公开/授权日：2011-08-23
信息查询
IPC分类:
