发明申请
US20100206482A1 PLASMA PROCESSING APPARATUS AND TEMPERATURE MEASURING METHOD AND APPARATUS USED THEREIN
有权
等离子体加工装置和温度测量方法及其使用的装置
- 专利标题: PLASMA PROCESSING APPARATUS AND TEMPERATURE MEASURING METHOD AND APPARATUS USED THEREIN
- 专利标题(中): 等离子体加工装置和温度测量方法及其使用的装置
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申请号: US12698616申请日: 2010-02-02
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公开(公告)号: US20100206482A1公开(公告)日: 2010-08-19
- 发明人: Tatsuo MATSUDO , Chishio Koshimizu , Jun Abe
- 申请人: Tatsuo MATSUDO , Chishio Koshimizu , Jun Abe
- 申请人地址: JP Tokyo
- 专利权人: TOKYO ELECTRON LIMITED
- 当前专利权人: TOKYO ELECTRON LIMITED
- 当前专利权人地址: JP Tokyo
- 优先权: JP2009-021205 20090202; JP2009-074603 20090325
- 主分类号: C23F1/08
- IPC分类号: C23F1/08 ; G01J5/08 ; G01K1/00 ; C23C16/00
摘要:
A plasma processing apparatus includes a temperature measuring unit; airtightly sealed temperature measuring windows provided in a mounting table, for optically communicating to transmit a measurement beam through a top surface and a bottom surface of the mounting table; and one or more connection members for connecting the mounting table and a base plate, which is provided in a space between the mounting table and the base plate. In the plasma processing apparatus, a space above the mounting table is set to be maintained under a vacuum atmosphere, and a space between the mounting table and the base plate is set to be maintained under a normal pressure atmosphere, and each collimator is fixed to the base plate at a position corresponding to each temperature measuring window, thereby measuring a temperature of the substrate via the temperature measuring windows by the temperature measuring unit.
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