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发明申请
US20100209622A1 Thin Film of Aluminum Nitride and Process for Producing the Thin Film of Aluminum Nitride 有权
氮化铝薄膜和生产氮化铝薄膜的方法

Thin Film of Aluminum Nitride and Process for Producing the Thin Film of Aluminum Nitride
摘要：
Flat, thin AlN membranes and methods of their manufacture are made available.An AlN thin film (2) contains between 0.001 wt. % and 10 wt. % additive atomic element of one or more type selected from Group-III atoms, Group-IV atoms and Group-V atoms. Onto a base material (1), the AlN thin film (2) is formable utilizing a plasma generated by setting inside a vacuum chamber an sintered AlN ceramic containing between 0.001 wt. % and 10 wt. % additive atomic element of one or more type selected from Group-III atoms, Group-IV atoms and Group-V atoms, and with the base material having been set within the vacuum chamber, irradiating the sintered AlN ceramic with a laser.
摘要（中）：

扁平，薄的AlN膜及其制造方法可用。 AlN薄膜（2）含有0.001重量％ ％和10wt。 选自III族原子，IV族原子和V族原子的一种或多种类型的添加剂原子元素。 在基材（1）上，AlN薄膜（2）可以利用通过在真空室内设置包含0.001重量％的烧结AlN陶瓷而产生的等离子体， ％和10wt。 选自III族原子，IV族原子和V族原子的一种或多种类型的添加剂原子元素，并将基材设置在真空室内，用激光照射烧结的AlN陶瓷。

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