发明申请
- 专利标题: CARBON NANOTUBE GROWING PROCESS, AND CARBON NANOTUBE BUNDLE FORMED SUBSTRATE
- 专利标题(中): 碳纳米管生长工艺和碳纳米管组成基材
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申请号: US12689515申请日: 2010-01-19
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公开(公告)号: US20100209704A1公开(公告)日: 2010-08-19
- 发明人: Yuichi Yamazaki , Tadashi Sakai , Naoshi Sakuma , Masayuki Katagiri , Mariko Suzuki , Shintaro Sato
- 申请人: Yuichi Yamazaki , Tadashi Sakai , Naoshi Sakuma , Masayuki Katagiri , Mariko Suzuki , Shintaro Sato
- 申请人地址: JP Tokyo
- 专利权人: KABUSHIKI KAISHA TOSHIBA
- 当前专利权人: KABUSHIKI KAISHA TOSHIBA
- 当前专利权人地址: JP Tokyo
- 优先权: JP2009-008437 20090119
- 主分类号: B32B27/02
- IPC分类号: B32B27/02 ; C23C4/04
摘要:
In the growth of carbon nanotubes, the aggregation of catalytic fine particles therefor is a problem. In order to realize the growth of carbon nanotubes into a high density, the carbon nanotube growing process includes a first plasma treatment step of treating a surface having catalytic fine particles with a plasma species generated from a gas which contains at least hydrogen or a rare gas without carbon element, a second plasma treatment step of forming a carbon layer on the surface of the catalytic fine particles by a plasma generated from a gas which contains at least a hydrocarbon after the first plasma treatment step, and a carbon nanotube growing step of growing carbon nanotubes by use of a plasma generated from a gas which contains at least a hydrocarbon after the second plasma treatment step.