发明申请
- 专利标题： MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
- 专利标题（中）： 半导体器件的制造方法
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申请号： US12706237申请日： 2010-02-16
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公开(公告)号： US20100210097A1公开(公告)日： 2010-08-19
- 发明人: Hiroshi Sato , Kenji Matsumoto , Hitoshi Itoh
- 申请人： Hiroshi Sato , Kenji Matsumoto , Hitoshi Itoh
- 申请人地址： JP Tokyo
- 专利权人： TOKYO ELECTRON LIMITED
- 当前专利权人： TOKYO ELECTRON LIMITED
- 当前专利权人地址： JP Tokyo
- 优先权： JP2009-037062 20090219
- 主分类号： H01L21/28
- IPC分类号： H01L21/28
摘要：
Provided is a manufacturing method of a semiconductor device including a gate insulating film which can be formed into a thin film and of which film composition is easy to be controlled. The manufacturing method includes: forming a manganese oxide film for serving as a gate insulating film on a semiconductor substrate, on which a transistor is formed; forming a conductive film for serving as a gate electrode on the manganese oxide film; and forming a gate electrode and a gate insulating film by processing the conductive film and the manganese oxide film.
公开/授权文献
- US08119510B2 Manufacturing method of semiconductor device 公开/授权日：2012-02-21
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