发明申请
- 专利标题： LATERAL BIPOLAR JUNCTION TRANSISTOR
- 专利标题（中）： 侧向双极晶体管
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申请号： US12389378申请日： 2009-02-20
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公开(公告)号： US20100213504A1公开(公告)日： 2010-08-26
- 发明人: Ching-Chung Ko , Tung-Hsing Lee
- 申请人： Ching-Chung Ko , Tung-Hsing Lee
- 主分类号： H01L29/739
- IPC分类号： H01L29/739 ; H01L21/331
摘要：
A lateral bipolar junction transistor includes an emitter region; a base region surrounding the emitter region; a gate disposed at least over a portion of the base region; and a collector region surrounding the base region; wherein the portion of the base region under the gate does not under go a threshold voltage implant process.
公开/授权文献
- US08674454B2 Lateral bipolar junction transistor 公开/授权日：2014-03-18
信息查询
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