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21 条记录 (耗时 0.027 秒)

    LATERAL BIPOLAR JUNCTION TRANSISTOR
    2.
    发明申请
    LATERAL BIPOLAR JUNCTION TRANSISTOR 有权
    侧向双极晶体管

    公开(公告)号：US20100213504A1

    公开(公告)日：2010-08-26

    申请号：US12389378

    申请日：2009-02-20

    申请人： Ching-Chung Ko ,  Tung-Hsing Lee

    发明人： Ching-Chung Ko ,  Tung-Hsing Lee

    IPC分类号： H01L29/739 ,  H01L21/331

    CPC分类号： H01L27/0623 ,  H01L21/8249 ,  H01L29/0649 ,  H01L29/0692 ,  H01L29/0821 ,  H01L29/6625 ,  H01L29/735

    摘要： A lateral bipolar junction transistor includes an emitter region; a base region surrounding the emitter region; a gate disposed at least over a portion of the base region; and a collector region surrounding the base region; wherein the portion of the base region under the gate does not under go a threshold voltage implant process.

    摘要翻译： 横向双极结晶体管包括发射极区域; 围绕发射极区域的基极区域; 设置在所述基部区域的至少一部分上的栅极; 以及围绕所述基底区域的收集器区域; 其中所述栅极下方的所述基极区域的所述部分未经过阈值电压注入工艺。

    INTEGRATED INDUCTOR
    3.
    发明申请
    INTEGRATED INDUCTOR 有权
    集成电感器

    公开(公告)号：US20090261937A1

    公开(公告)日：2009-10-22

    申请号：US12493245

    申请日：2009-06-29

    申请人： Ching-Chung Ko ,  Tung-Hsing Lee ,  Kuei-Ti Chan ,  Tao Cheng ,  Ming-Tzong Yang

    发明人： Ching-Chung Ko ,  Tung-Hsing Lee ,  Kuei-Ti Chan ,  Tao Cheng ,  Ming-Tzong Yang

    IPC分类号： H01F5/00

    CPC分类号： H01L23/5227 ,  H01L28/10 ,  H01L2924/0002 ,  H01L2924/00

    摘要： An integrated inductor includes a winding consisting of an aluminum layer atop a passivation layer, wherein the aluminum layer does not extend into the passivation layer and has a thickness that is not less than about 2.0 micrometers. The passivation layer has a thickness not less than about 0.8 micrometers. By eliminating copper from the integrated inductor and increasing the thickness of the passivation layer, the distance between the bottom surface of the inductor structure and the main surface of the semiconductor substrate is increased, thus the parasitic substrate coupling may be reduced and the Q-factor may be improved. Besides, the increased thickness of the aluminum layer may help improve the Q-factor as well.

    摘要翻译： 集成电感器包括由钝化层顶部的铝层组成的绕组，其中铝层不延伸到钝化层中，并且具有不小于约2.0微米的厚度。 钝化层的厚度不小于约0.8微米。 通过从集成电感器中消除铜并增加钝化层的厚度，电感器结构的底表面与半导体衬底的主表面之间的距离增加，因此寄生衬底耦合可能会降低，Q因子 可以改进。 此外，铝层的增加的厚度也可以有助于改善Q因子。

    Integrated inductor
    4.
    发明授权
    Integrated inductor 有权
    集成电感

    公开(公告)号：US08860544B2

    公开(公告)日：2014-10-14

    申请号：US12493245

    申请日：2009-06-29

    申请人： Ching-Chung Ko ,  Tung-Hsing Lee ,  Kuei-Ti Chan ,  Tao Cheng ,  Ming-Tzong Yang

    发明人： Ching-Chung Ko ,  Tung-Hsing Lee ,  Kuei-Ti Chan ,  Tao Cheng ,  Ming-Tzong Yang

    IPC分类号： H01F5/00

    CPC分类号： H01L23/5227 ,  H01L28/10 ,  H01L2924/0002 ,  H01L2924/00

    摘要： An integrated inductor includes a winding consisting of an aluminum layer atop a passivation layer, wherein the aluminum layer does not extend into the passivation layer and has a thickness that is not less than about 2.0 micrometers. The passivation layer has a thickness not less than about 0.8 micrometers. By eliminating copper from the integrated inductor and increasing the thickness of the passivation layer, the distance between the bottom surface of the inductor structure and the main surface of the semiconductor substrate is increased, thus the parasitic substrate coupling may be reduced and the Q-factor may be improved. Besides, the increased thickness of the aluminum layer may help improve the Q-factor as well.

    摘要翻译： 集成电感器包括由钝化层顶部的铝层组成的绕组，其中铝层不延伸到钝化层中，并且具有不小于约2.0微米的厚度。 钝化层的厚度不小于约0.8微米。 通过从集成电感器中消除铜并增加钝化层的厚度，电感器结构的底表面与半导体衬底的主表面之间的距离增加，因此寄生衬底耦合可能会降低，Q因子 可以改进。 此外，铝层的增加的厚度也可以有助于改善Q因子。

    Lateral bipolar junction transistor
    5.
    发明授权
    Lateral bipolar junction transistor 有权
    侧面双极结晶体管

    公开(公告)号：US07932581B2

    公开(公告)日：2011-04-26

    申请号：US12464107

    申请日：2009-05-12

    申请人： Ming-Tzong Yang ,  Ching-Chung Ko ,  Tung-Hsing Lee ,  Zheng Zeng

    发明人： Ming-Tzong Yang ,  Ching-Chung Ko ,  Tung-Hsing Lee ,  Zheng Zeng

    IPC分类号： H01L29/66

    CPC分类号： H01L29/735 ,  H01L21/8249 ,  H01L27/0623 ,  H01L29/0692 ,  H01L29/6625

    摘要： A lateral bipolar junction transistor includes an emitter region; a base region surrounding the emitter region; a gate disposed at least over a portion of the base region; a collector region surrounding the base region with an offset between an edge of the gate and the collector region; a lightly doped drain region between the edge of the gate and the collector region; a salicide block layer disposed on or over the lightly doped drain region; and a collector salicide formed on at least a portion of the collector region.

    摘要翻译： 横向双极结晶体管包括发射极区域; 围绕发射极区域的基极区域; 设置在所述基部区域的至少一部分上的栅极; 集电极区域，围绕所述基极区域，在所述栅极的边缘和所述集电极区域之间具有偏移; 在栅极的边缘和集电极区域之间的轻掺杂漏极区; 设置在所述轻掺杂漏极区域上或上部的自对准硅化物阻挡层; 以及形成在所述收集器区域的至少一部分上的收集器自对准硅化物。

    Lateral bipolar junction transistor with reduced base resistance
    6.
    发明授权
    Lateral bipolar junction transistor with reduced base resistance 有权
    具有降低的基极电阻的横向双极结晶体管

    公开(公告)号：US07897995B2

    公开(公告)日：2011-03-01

    申请号：US12420046

    申请日：2009-04-07

    申请人： Ming-Tzong Yang ,  Tao Cheng ,  Ching-Chung Ko ,  Tung-Hsing Lee

    发明人： Ming-Tzong Yang ,  Tao Cheng ,  Ching-Chung Ko ,  Tung-Hsing Lee

    IPC分类号： H01L29/735

    CPC分类号： H01L29/735 ,  H01L29/0692 ,  H01L29/423

    摘要： A lateral bipolar junction transistor formed in a semiconductor substrate includes an emitter region; a base region surrounding the emitter region; a gate disposed at least over a portion of the base region; a collector region having at least one open side and being disposed about a periphery of the base region; a shallow trench isolation (STI) region disposed about a periphery of the collector region; a base contact region disposed about a periphery of the STI region; and an extension region merging with the base contact region and laterally extending to the gate on the open side of the collector region.

    摘要翻译： 形成在半导体衬底中的横向双极结型晶体管包括发射极区域; 围绕发射极区域的基极区域; 设置在所述基部区域的至少一部分上的栅极; 具有至少一个开放侧并且围绕所述基底区域的周边设置的收集器区域; 设置在集电极区域周围的浅沟槽隔离（STI）区域; 设置在所述STI区域周围的基极接触区域; 以及与所述基极接触区域合并并横向延伸到所述集电极区域的开放侧的栅极的延伸区域。

    LATERAL BIPOLAR JUNCTION TRANSISTOR
    7.
    发明申请
    LATERAL BIPOLAR JUNCTION TRANSISTOR 有权
    侧向双极晶体管

    公开(公告)号：US20100289058A1

    公开(公告)日：2010-11-18

    申请号：US12464107

    申请日：2009-05-12

    申请人： Ming-Tzong Yang ,  Ching-Chung Ko ,  Tung-Hsing Lee ,  Zheng Zeng

    发明人： Ming-Tzong Yang ,  Ching-Chung Ko ,  Tung-Hsing Lee ,  Zheng Zeng

    IPC分类号： H01L29/739 ,  H01L21/331

    CPC分类号： H01L29/735 ,  H01L21/8249 ,  H01L27/0623 ,  H01L29/0692 ,  H01L29/6625

    摘要： A lateral bipolar junction transistor includes an emitter region; a base region surrounding the emitter region; a gate disposed at least over a portion of the base region; a collector region surrounding the base region with an offset between an edge of the gate and the collector region; a lightly doped drain region between the edge of the gate and the collector region; a salicide block layer disposed on or over the lightly doped drain region; and a collector salicide formed on at least a portion of the collector region.

    摘要翻译： 横向双极结晶体管包括发射极区域; 围绕发射极区域的基极区域; 设置在所述基部区域的至少一部分上的栅极; 集电极区域，围绕所述基极区域，在所述栅极的边缘和所述集电极区域之间具有偏移; 在栅极的边缘和集电极区域之间的轻掺杂漏极区; 设置在所述轻掺杂漏极区域上或上部的自对准硅化物阻挡层; 以及形成在所述收集器区域的至少一部分上的收集器自对准硅化物。

    LATERAL BIPOLAR JUNCTION TRANSISTOR WITH REDUCED BASE RESISTANCE
    8.
    发明申请
    LATERAL BIPOLAR JUNCTION TRANSISTOR WITH REDUCED BASE RESISTANCE 有权
    具有降低基极电阻的侧向双极晶体管

    公开(公告)号：US20100252860A1

    公开(公告)日：2010-10-07

    申请号：US12420046

    申请日：2009-04-07

    申请人： Ming-Tzong Yang ,  Tao Cheng ,  Ching-Chung Ko ,  Tung-Hsing Lee

    发明人： Ming-Tzong Yang ,  Tao Cheng ,  Ching-Chung Ko ,  Tung-Hsing Lee

    IPC分类号： H01L29/735

    CPC分类号： H01L29/735 ,  H01L29/0692 ,  H01L29/423

    摘要： A lateral bipolar junction transistor formed in a semiconductor substrate includes an emitter region; a base region surrounding the emitter region; a gate disposed at least over a portion of the base region; a collector region having at least one open side and being disposed about a periphery of the base region; a shallow trench isolation (STI) region disposed about a periphery of the collector region; a base contact region disposed about a periphery of the STI region; and an extension region merging with the base contact region and laterally extending to the gate on the open side of the collector region.

    摘要翻译： 形成在半导体衬底中的横向双极结型晶体管包括发射极区域; 围绕发射极区域的基极区域; 设置在所述基部区域的至少一部分上的栅极; 具有至少一个开放侧并且围绕所述基底区域的周边设置的收集器区域; 设置在集电极区域周围的浅沟槽隔离（STI）区域; 设置在所述STI区域周围的基极接触区域; 以及与所述基极接触区域合并并横向延伸到所述集电极区域的开放侧的栅极的延伸区域。