发明申请
- 专利标题： SEMICONDUCTOR SUBSTRATE AND SEMICONDUCTOR DEVICE
- 专利标题（中）： 半导体衬底和半导体器件
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申请号： US12681576申请日： 2008-10-06
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公开(公告)号： US20100213516A1公开(公告)日： 2010-08-26
- 发明人: Tadahiro Ohmi , Akinobu Teramoto , Tomoyuki Suwa , Rihito Kuroda , Hideo Kudo , Yoshinori Hayamizu
- 申请人： Tadahiro Ohmi , Akinobu Teramoto , Tomoyuki Suwa , Rihito Kuroda , Hideo Kudo , Yoshinori Hayamizu
- 专利权人： National University Corporation Tohoku University,Shin-Etsu Handotai Co., Ltd.
- 当前专利权人： National University Corporation Tohoku University,Shin-Etsu Handotai Co., Ltd.
- 优先权： JP2007-261096 20071004
- 国际申请： PCT/JP2008/068183 WO 20081006
- 主分类号： H01L29/04
- IPC分类号： H01L29/04 ; H01L29/786
摘要：
On a surface of a semiconductor substrate, a plurality of terraces formed stepwise by an atomic step are formed in the substantially same direction. Using the semiconductor substrate, a MOS transistor is formed so that no step exists in a carrier traveling direction (source-drain direction).
公开/授权文献
- US08492879B2 Semiconductor substrate and semiconductor device 公开/授权日：2013-07-23
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