公开(公告)号：US20150206927A1

公开(公告)日：2015-07-23

申请号：US14408469

申请日：2012-06-20

申请人： Kazuo Kuroda ,  Hideo Kudo ,  Hiroshi Ohata ,  Toshiharu Uchida ,  Yohei Tanaka

发明人： Kazuo Kuroda ,  Hideo Kudo ,  Hiroshi Ohata ,  Toshiharu Uchida ,  Yohei Tanaka

IPC分类号： H01L27/32 ,  H01L51/52 ,  H01L51/00

CPC分类号： H01L27/3246 ,  H01L27/3283 ,  H01L51/0096 ,  H01L51/5215 ,  H01L51/5221 ,  H01L51/5275 ,  H05B33/28

摘要： An organic EL device includes at least one insulating bank disposed on a translucent substrate, a translucent electrode in contact with the bank, an organic layer containing a light-emitting layer and formed on the translucent electrode, and a reflection electrode formed on the organic layer. The bank is made from a translucent dielectric material having a low refractive index that is equal to or less than that of the organic layer. The bank has a side face that is a slope inclined with respect to the translucent substrate. The side face has a concave surface shape that faces the light-emitting layer from a slope in contact with the light-emitting layer to a slope in contact with a portion of the organic layer in the vicinity of the reflection electrode.

摘要翻译： 一种有机EL器件，包括设置在透光性基板上的至少一个绝缘堤，与堤堤接触的透光性电极，形成在透光性电极上的含有发光层的有机层，形成在有机层上的反射电极 。 该堤由具有等于或小于有机层的折射率的低折射率的半透明介电材料制成。 堤岸具有相对于半透明基板倾斜的斜面的侧面。 侧面具有从与发光层接触的倾斜面到与反射电极附近的有机层的一部分接触的斜面的发光层的凹面形状。

公开(公告)号：US08492879B2

公开(公告)日：2013-07-23

申请号：US12681576

申请日：2008-10-06

申请人： Tadahiro Ohmi ,  Akinobu Teramoto ,  Tomoyuki Suwa ,  Rihito Kuroda ,  Hideo Kudo ,  Yoshinori Hayamizu

发明人： Tadahiro Ohmi ,  Akinobu Teramoto ,  Tomoyuki Suwa ,  Rihito Kuroda ,  Hideo Kudo ,  Yoshinori Hayamizu

IPC分类号： H01L29/04

CPC分类号： H01L29/045 ,  H01L21/02381 ,  H01L21/02433 ,  H01L29/78

摘要： On a surface of a semiconductor substrate, a plurality of terraces formed stepwise by an atomic step are formed in the substantially same direction. Using the semiconductor substrate, a MOS transistor is formed so that no step exists in a carrier traveling direction (source-drain direction).

摘要翻译： 在半导体基板的表面上，以大致相同的方向形成有以原子台阶逐步形成的多个台阶。 使用半导体衬底，形成MOS晶体管，使得在载流子行进方向（源 - 漏方向）上不存在台阶。

公开(公告)号：US06841218B2

公开(公告)日：2005-01-11

申请号：US10436368

申请日：2003-05-13

申请人： Yasuo Hosoda ,  Satoshi Jinno ,  Ayumi Mitsumori ,  Hideo Kudo

发明人： Yasuo Hosoda ,  Satoshi Jinno ,  Ayumi Mitsumori ,  Hideo Kudo

IPC分类号： B41M5/26 ,  G11B7/0045 ,  G11B7/24 ,  G11B7/243 ,  B32B3/02

CPC分类号： G11B7/24 ,  G11B7/00454 ,  G11B7/243 ,  G11B7/258 ,  G11B2007/24308 ,  G11B2007/24312 ,  G11B2007/24314 ,  G11B2007/24316 ,  Y10T428/21

摘要： An object of the present invention is to provide a phase-change optical recording medium of an amorphous recording mark type. The optical recording medium is a write once type medium capable of decreasing the degradation of an information signal which has been already recorded. The recording layer of the optical recording medium according to the present invention includes a first recording layer and a second recording layer. The first recording layer comprises a first composition which can be changed into another composition more stable in an amorphous state by combining with a component included in the second recording layer.

摘要翻译： 本发明的目的是提供一种非晶体记录标记型的相变光学记录介质。 光记录介质是能够减少已经记录的信息信号的劣化的一次写入型介质。 根据本发明的光记录介质的记录层包括第一记录层和第二记录层。 第一记录层包括第一组合物，其可以通过与包含在第二记录层中的组分组合而被改变为在非晶状态下更稳定的另一种组合物。

公开(公告)号：US5891353A

公开(公告)日：1999-04-06

申请号：US915579

申请日：1997-08-21

申请人： Hisashi Masumura ,  Kiyoshi Suzuki ,  Hideo Kudo ,  Teruaki Fukami

发明人： Hisashi Masumura ,  Kiyoshi Suzuki ,  Hideo Kudo ,  Teruaki Fukami

IPC分类号： B24B37/00 ,  C09K3/14 ,  H01L21/02 ,  H01L21/302 ,  H01L21/304 ,  H01L21/306 ,  B44C1/22

CPC分类号： H01L21/02024 ,  H01L21/30625 ,  Y10T428/21

摘要： A semiconductor wafer polishing agent contains mainly a silica containing polishing agent and is added with a polyolefin type fine particle material. The novel semiconductor wafer polishing agent is capable of low brightness polishing to the back face of the wafer, sensor detection of the front and back faces of the wafer, and suppression of dust to be generated by chipping of the back face of the wafer, thereby to increase the yield of semiconductor devices. A polishing method using the polishing agent and a novel semiconductor wafer having a back face with an unconventional surface shape are also disclosed.

公开(公告)号：US5866226A

公开(公告)日：1999-02-02

申请号：US670258

申请日：1996-06-20

申请人： Hisashi Masumura ,  Kiyoshi Suzuki ,  Hideo Kudo ,  Teruaki Fukami

发明人： Hisashi Masumura ,  Kiyoshi Suzuki ,  Hideo Kudo ,  Teruaki Fukami

IPC分类号： B24B37/00 ,  C09K3/14 ,  H01L21/02 ,  H01L21/302 ,  H01L21/304 ,  H01L21/306 ,  B32B3/02 ,  H01L29/00

CPC分类号： H01L21/02024 ,  H01L21/30625 ,  Y10T428/21

摘要： A semiconductor wafer polishing agent contains mainly a silica containing polishing agent and is added with a polyolefin type fine particle material. The novel semiconductor wafer polishing agent is capable of low brightness polishing to the back face of the wafer, sensor detection of the front and back faces of the wafer, and suppression of dust to be generated by chipping of the back face of the wafer, thereby to increase the yield of semiconductor devices. A polishing method using the polishing agent and a novel semiconductor wafer having a back face with an unconventional surface shape are also disclosed.

摘要翻译： 半导体晶片抛光剂主要含有含二氧化硅的抛光剂，并加入聚烯烃型细粒材料。 该新颖的半导体晶片抛光剂能够对晶片的背面进行低亮度抛光，对晶片的正面和背面进行传感器检测，并且抑制由于晶片背面的碎裂而产生的灰尘，由此 以提高半导体器件的产量。 还公开了使用抛光剂的抛光方法和具有非常规表面形状的背面的新型半导体晶片。

公开(公告)号：US5821167A

公开(公告)日：1998-10-13

申请号：US773379

申请日：1996-12-26

申请人： Teruaki Fukami ,  Hisashi Masumura ,  Kiyoshi Suzuki ,  Hideo Kudo

发明人： Teruaki Fukami ,  Hisashi Masumura ,  Kiyoshi Suzuki ,  Hideo Kudo

IPC分类号： B24B37/00 ,  H01L21/302 ,  H01L21/304 ,  H01L21/306

CPC分类号： H01L21/02024

摘要： A method of manufacturing semiconductor mirror wafers includes a double side primary mirror polishing step, a back side low brightness polishing step and a front side final mirror polishing step, wherein a silica containing polishing agent is used together with a polyolefin type fine particle material for the back side low brightness polishing. The method is capable of low brightness polishing of the back side, sensor detection of the front and back sides, suppression of generation of fine dust or particles from back side, thereby to increase the yield of semiconductor devices, manufacturing mirror wafers with higher flatness level, and higher productivity due to simplification of processes.

摘要翻译： 制造半导体镜面晶片的方法包括双面主镜抛光步骤，背面低亮度抛光步骤和前侧最终镜面抛光步骤，其中将含二氧化硅的抛光剂与聚烯烃型细颗粒材料一起用于 背面低亮度抛光。 该方法能够对背面进行低亮度抛光，前后传感器检测，抑制从背面产生细小灰尘或微粒，从而提高半导体器件的产量，制造具有较高平坦度水平的镜面晶片 ，并且由于工艺的简化而提高了生产率。

公开(公告)号：US5800725A

公开(公告)日：1998-09-01

申请号：US789798

申请日：1997-01-28

申请人： Tadahiro Kato ,  Hisashi Masumura ,  Hideo Kudo

发明人： Tadahiro Kato ,  Hisashi Masumura ,  Hideo Kudo

IPC分类号： H01L21/306 ,  H01L21/302 ,  H01L21/304 ,  B44C1/22 ,  C03C15/00

CPC分类号： H01L21/02008

摘要： A method of manufacturing semiconductor wafers includes a double side primary polishing step, a back side etching step and a single side mirror polishing step. This method is capable of easy sensor detection of the front and back sides of the wafer, wafer processing of higher flatness level by forming etched rough surface at the back side of the double side polished wafer and setting up of wafer manufacturing process including a double side polishing step.

摘要翻译： 制造半导体晶片的方法包括双面一次抛光步骤，背面蚀刻步骤和单面镜面抛光步骤。 该方法能够容易地传感器检测晶片的正面和背面，通过在双面抛光晶片的背面形成蚀刻的粗糙表面并设置包括双面的晶片制造工艺，从而提高平坦度的晶片处理 抛光步骤

公开(公告)号：US5679212A

公开(公告)日：1997-10-21

申请号：US534926

申请日：1995-09-28

申请人： Tadahiro Kato ,  Hideo Kudo

发明人： Tadahiro Kato ,  Hideo Kudo

IPC分类号： B24B1/00 ,  B24B7/22 ,  B24B37/00 ,  H01L21/304 ,  H01L21/306

CPC分类号： B24B7/228

摘要： The work of grinding of a silicon wafer is carried out in an etchant containing no loose abrasive and permitting selective etching of deformed layers existent in the surface part of said wafer. The removal of the deformed layers and the heavy metals from the wafer is effected simultaneously and quickly owing to the execution of the work of grinding in the etchant and the consequent synergism of the work of grinding and etching.

摘要翻译： 研磨硅晶片的工作是在不含松散研磨剂的蚀刻剂中进行的，并且允许在所述晶片的表面部分中存在变形层的选择性蚀刻。 由于在蚀刻剂中研磨的作用以及随之而来的磨削和蚀刻工作的协同作用，从晶片中去除变形的层和重金属同时且快速地实现。

公开(公告)号：US5179547A

公开(公告)日：1993-01-12

申请号：US706164

申请日：1991-05-28

申请人： Toshihiro Komaki ,  Hideo Kudo ,  Tomonori Ishizuki ,  Ryoichi Hirota ,  Masahiro Katsumura ,  Seishi Maita

发明人： Toshihiro Komaki ,  Hideo Kudo ,  Tomonori Ishizuki ,  Ryoichi Hirota ,  Masahiro Katsumura ,  Seishi Maita

IPC分类号： G11B7/00 ,  G11B7/007 ,  G11B7/013 ,  G11B7/24 ,  G11B7/26 ,  G11B7/30

CPC分类号： G11B7/24085 ,  G11B7/24 ,  G11B7/26

摘要： On the phase change optical information recording medium, a plurality of protection pits each smaller than one pit on the pre-pit region are provided over the entire data region of the recording film at least on its surface. Therefore, even when overwriting is repeatedly performed, the reproduced data waveform is distorted less frequently and data error is reduced. By forming the group of protection pits, the adhesive strength between the phase change recording film and the protective film can be increased, and the reliability of exfoliating strength can be improved.

公开(公告)号：US5117590A

公开(公告)日：1992-06-02

申请号：US381984

申请日：1989-07-19

申请人： Hideo Kudo ,  Makoto Takaoka

发明人： Hideo Kudo ,  Makoto Takaoka

IPC分类号： B24B9/06 ,  B24B41/00 ,  B24B51/00

CPC分类号： B24B9/065 ,  B24B41/005 ,  B24B51/00

摘要： A method of automatically chamfering a wafer and an apparatus therefor are disclosed. The method comprises the steps of supplying a wafer, positioning and setting the wafer on working stages, chamfer-machining the wafer on the working stages, and recovering the wafer, all the steps being continuously performed on a full-automatic basis. The apparatus comprises a wafer supply means, a wafer positioning and setting means, a chamfer-machining means for the wafer, a wafer recovering means, and a wafer transferring means. Since the method and apparatus therefor enables performance of a series of those operations on a continuous and full-automatic basis, it is possible to enhance the operating efficiency and machining ability and, at the same time, to achieve manpower reduction.