发明申请
US20100216317A1 Methods for Forming Conformal Oxide Layers on Semiconductor Devices
有权
在半导体器件上形成共形氧化层的方法
- 专利标题： Methods for Forming Conformal Oxide Layers on Semiconductor Devices
- 专利标题（中）： 在半导体器件上形成共形氧化层的方法
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申请号： US12691969申请日： 2010-01-22
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公开(公告)号： US20100216317A1公开(公告)日： 2010-08-26
- 发明人: Agus S. Tjandra , Christopher S. Olsen , Johanes F. Swenberg , Yoshitaka Yokota
- 申请人： Agus S. Tjandra , Christopher S. Olsen , Johanes F. Swenberg , Yoshitaka Yokota
- 申请人地址： US CA Santa Clara
- 专利权人： Applied Materials, Inc.
- 当前专利权人： Applied Materials, Inc.
- 当前专利权人地址： US CA Santa Clara
- 主分类号： H01L21/316
- IPC分类号： H01L21/316
摘要：
Methods and apparatus for forming an oxide layer on a semiconductor substrate are disclosed. In one or more embodiments, plasma oxidation is used to form a conformal oxide layer by controlling the temperature of the semiconductor substrate at below about 100° C. Methods for controlling the temperature of the semiconductor substrate according to one or more embodiments include utilizing an electrostatic chuck and a coolant and gas convection.
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