公开(公告)号：US08435906B2

公开(公告)日：2013-05-07

申请号：US12691969

申请日：2010-01-22

申请人： Agus S. Tjandra ,  Christopher S. Olsen ,  Johanes F. Swenberg ,  Yoshitaka Yokota

发明人： Agus S. Tjandra ,  Christopher S. Olsen ,  Johanes F. Swenberg ,  Yoshitaka Yokota

IPC分类号： H01L21/31

CPC分类号： H01L21/02238 ,  H01J37/321 ,  H01J37/32137 ,  H01J37/32724 ,  H01L21/0223 ,  H01L21/02252 ,  H01L21/28273 ,  H01L21/28282 ,  H01L21/3165 ,  H01L21/31662 ,  H01L21/67109 ,  H01L21/76224 ,  H01L29/7881

摘要： Methods and apparatus for forming an oxide layer on a semiconductor substrate are disclosed. In one or more embodiments, plasma oxidation is used to form a conformal oxide layer by controlling the temperature of the semiconductor substrate at below about 100° C. Methods for controlling the temperature of the semiconductor substrate according to one or more embodiments include utilizing an electrostatic chuck and a coolant and gas convection.

摘要翻译： 公开了在半导体衬底上形成氧化物层的方法和装置。 在一个或多个实施例中，等离子体氧化用于通过将半导体衬底的温度控制在低于约100℃来形成保形氧化物层。根据一个或多个实施例的用于控制半导体衬底的温度的方法包括利用静电 卡盘和冷却液和气体对流。

公开(公告)号：US20100216317A1

公开(公告)日：2010-08-26

申请号：US12691969

申请日：2010-01-22

申请人： Agus S. Tjandra ,  Christopher S. Olsen ,  Johanes F. Swenberg ,  Yoshitaka Yokota

发明人： Agus S. Tjandra ,  Christopher S. Olsen ,  Johanes F. Swenberg ,  Yoshitaka Yokota

IPC分类号： H01L21/316

CPC分类号： H01L21/02238 ,  H01J37/321 ,  H01J37/32137 ,  H01J37/32724 ,  H01L21/0223 ,  H01L21/02252 ,  H01L21/28273 ,  H01L21/28282 ,  H01L21/3165 ,  H01L21/31662 ,  H01L21/67109 ,  H01L21/76224 ,  H01L29/7881

摘要： Methods and apparatus for forming an oxide layer on a semiconductor substrate are disclosed. In one or more embodiments, plasma oxidation is used to form a conformal oxide layer by controlling the temperature of the semiconductor substrate at below about 100° C. Methods for controlling the temperature of the semiconductor substrate according to one or more embodiments include utilizing an electrostatic chuck and a coolant and gas convection.

摘要翻译： 公开了在半导体衬底上形成氧化物层的方法和装置。 在一个或多个实施例中，等离子体氧化用于通过将半导体衬底的温度控制在低于约100℃来形成保形氧化物层。根据一个或多个实施例的用于控制半导体衬底的温度的方法包括利用静电 卡盘和冷却液和气体对流。

公开(公告)号：US20110061812A1

公开(公告)日：2011-03-17

申请号：US12720926

申请日：2010-03-10

申请人： Udayan Ganguly ,  Yoshitaka Yokota ,  Christopher S. Olsen ,  Matthew D. Scotney-Castle ,  Vicky Nguyen ,  Swaminathan Srinivasan ,  Wei Liu ,  Johanes F. Swenberg ,  Jose A. Marin ,  Aijit Balakrishna ,  Jacob Newman ,  Stephen C. Hickerson

发明人： Udayan Ganguly ,  Yoshitaka Yokota ,  Christopher S. Olsen ,  Matthew D. Scotney-Castle ,  Vicky Nguyen ,  Swaminathan Srinivasan ,  Wei Liu ,  Johanes F. Swenberg ,  Jose A. Marin ,  Aijit Balakrishna ,  Jacob Newman ,  Stephen C. Hickerson

IPC分类号： H01L21/465

CPC分类号： H01L21/0223 ,  H01L21/67109 ,  H01L21/67115 ,  H01L21/67167 ,  H01L21/6719 ,  H01L21/67207 ,  H01L21/68785 ,  H01L21/76232 ,  H01L27/11521

摘要： Apparatus and methods for the manufacture of semiconductor devices suitable for narrow pitch applications and methods of fabrication thereof are described herein. Disclosed are various single chambers configured to form and/or shape a material layer by oxidizing a surface of a material layer to form an oxide layer; removing at least some of the oxide layer by an etching process; and cyclically repeating the oxidizing and removing processes until the material layer is formed to a desired shape. In some embodiments, the material layer may be a floating gate of a semiconductor device.

公开(公告)号：US20110065276A1

公开(公告)日：2011-03-17

申请号：US12720942

申请日：2010-03-10

申请人： Udayan Ganguly ,  Joseph M. Ranish ,  Aaron M. Hunter ,  Jing Tang ,  Christopher S. Olsen ,  Matthew D. Scotney-Castle ,  Vicky Nguyen ,  Swaminathan Srinivasan ,  Wei Liu ,  Johanes F. Swenberg ,  Shiyu Sun

发明人： Udayan Ganguly ,  Joseph M. Ranish ,  Aaron M. Hunter ,  Jing Tang ,  Christopher S. Olsen ,  Matthew D. Scotney-Castle ,  Vicky Nguyen ,  Swaminathan Srinivasan ,  Wei Liu ,  Johanes F. Swenberg ,  Shiyu Sun

IPC分类号： H01L21/311 ,  H01L21/3065

CPC分类号： H01L21/76232 ,  H01L21/0223 ,  H01L21/67109 ,  H01L21/67115 ,  H01L21/67167 ,  H01L21/6719 ,  H01L21/67207 ,  H01L21/68785 ,  H01L27/11521

摘要： Apparatus and methods for the manufacture of semiconductor devices suitable for narrow pitch applications and methods of fabrication thereof are described herein. Disclosed are various single chambers configured to form and/or shape a material layer by oxidizing a surface of a material layer to form an oxide layer; removing at least some of the oxide layer by an etching process; and cyclically repeating the oxidizing and removing processes until the material layer is formed to a desired shape. In some embodiments, the material layer may be a floating gate of a semiconductor device.

公开(公告)号：US20140273530A1

公开(公告)日：2014-09-18

申请号：US14212425

申请日：2014-03-14

申请人： Victor Nguyen ,  Isabelita Roflox ,  Mihaela Balseanu ,  Li-Qun Xia ,  Heng Pan ,  Wei Liu ,  Malcolm J. Bevan ,  Christopher S. Olsen ,  Johanes F. Swenberg

发明人： Victor Nguyen ,  Isabelita Roflox ,  Mihaela Balseanu ,  Li-Qun Xia ,  Heng Pan ,  Wei Liu ,  Malcolm J. Bevan ,  Christopher S. Olsen ,  Johanes F. Swenberg

IPC分类号： H01L21/02

CPC分类号： H01L21/0217 ,  C23C16/045 ,  C23C16/345 ,  C23C16/45542 ,  C23C16/56 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/02329 ,  H01L21/0234 ,  H01L21/02348 ,  H01L29/7843

摘要： Provided are methods post deposition treatment of films comprising SiN. Certain methods pertain to providing a film comprising SiN; and exposing the film to an inductively coupled plasma, capacitively coupled plasma or a microwave plasma to provide a treated film with a modulated film stress and/or wet etch rate in dilute HF. Certain other methods comprise depositing a PEALD SiN film followed by exposure to a plasma nitridation process or a UV treatment to provide a treated film.

摘要翻译： 提供了沉积处理包括SiN的膜的方法。 某些方法涉及提供包含SiN的膜; 并将该膜暴露于电感耦合等离子体，电容耦合等离子体或微波等离子体，以在稀HF中提供具有调制薄膜应力和/或湿蚀刻速率的处理薄膜。 某些其它方法包括沉积PEALD SiN膜，然后暴露于等离子体氮化处理或UV处理以提供经处理的膜。

公开(公告)号：US20110061810A1

公开(公告)日：2011-03-17

申请号：US12720957

申请日：2010-03-10

申请人： Udayan Ganguly ,  Joseph M. Ranish ,  Aaron M. Hunter ,  Jing Tang ,  Christopher S. Olsen ,  Matthew D. Scotney-Castle ,  Vicky Nguyen ,  Swaminathan Srinivasan ,  Johanes F. Swenberg ,  Anchuan Wang ,  Nitin K. Ingle ,  Manish Hemkar ,  Jose A. Marin

发明人： Udayan Ganguly ,  Joseph M. Ranish ,  Aaron M. Hunter ,  Jing Tang ,  Christopher S. Olsen ,  Matthew D. Scotney-Castle ,  Vicky Nguyen ,  Swaminathan Srinivasan ,  Johanes F. Swenberg ,  Anchuan Wang ,  Nitin K. Ingle ,  Manish Hemkar ,  Jose A. Marin

IPC分类号： H01L21/3065

CPC分类号： H01L21/67115 ,  H01L21/0223 ,  H01L21/67109 ,  H01L21/67167 ,  H01L21/6719 ,  H01L21/67207 ,  H01L21/68785 ,  H01L21/76232 ,  H01L27/11521

摘要： Apparatus and methods for the manufacture of semiconductor devices suitable for narrow pitch applications and methods of fabrication thereof are described herein. Disclosed are various single chambers configured to form and/or shape a material layer by oxidizing a surface of a material layer to form an oxide layer; removing at least some of the oxide layer by an etching process; and cyclically repeating the oxidizing and removing processes until the material layer is formed to a desired shape. In some embodiments, the material layer may be a floating gate of a semiconductor device.

摘要翻译： 本文描述了用于制造适用于窄间距应用的半导体器件的装置和方法及其制造方法。 公开了通过氧化材料层的表面以形成氧化物层来形成和/或形成材料层的各种单室; 通过蚀刻工艺去除至少一些氧化物层; 并周期性地重复氧化和去除工艺，直到材料层形成所需的形状。 在一些实施例中，材料层可以是半导体器件的浮置栅极。

公开(公告)号：US20140302686A1

公开(公告)日：2014-10-09

申请号：US13858922

申请日：2013-04-08

申请人： Heng Pan ,  Matthew Scott Rogers ,  Johanes F. Swenberg ,  Christopher S. Olsen ,  Wei Liu ,  David Chu ,  Malcolm J. Bevan

发明人： Heng Pan ,  Matthew Scott Rogers ,  Johanes F. Swenberg ,  Christopher S. Olsen ,  Wei Liu ,  David Chu ,  Malcolm J. Bevan

IPC分类号： H01L21/02

CPC分类号： H01L21/02252 ,  H01L21/02112 ,  H01L21/02159 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02181 ,  H01L21/02323 ,  H01L21/02329 ,  H01L21/0234

摘要： Disclosed are apparatus and methods for processing a substrate. The substrate having a feature with a layer thereon is exposed to an inductively coupled plasma which forms a substantially conformal layer.

摘要翻译： 公开了用于处理基板的装置和方法。 具有其上具有层的特征的衬底暴露于形成基本上保形层的电感耦合等离子体。

公开(公告)号：US08062472B2

公开(公告)日：2011-11-22

申请号：US11960246

申请日：2007-12-19

申请人： Wei Liu ,  Johanes F. Swenberg ,  Hanh D. Nguyen ,  Son T. Nguyen ,  Roger Curtis ,  Philip A. Bottini

发明人： Wei Liu ,  Johanes F. Swenberg ,  Hanh D. Nguyen ,  Son T. Nguyen ,  Roger Curtis ,  Philip A. Bottini

IPC分类号： C23C16/00 ,  H01L21/306

CPC分类号： H01J37/321 ,  H01J37/3211 ,  H01J37/32174

摘要： The present invention generally provides apparatus and method for adjusting plasma density distribution in an inductively coupled plasma chamber. One embodiment of the present invention provides an apparatus configured for processing a substrate. The apparatus comprises a chamber body defining a process volume configured to process the substrate therein, and a coil assembly coupled to the chamber body outside the process volume, wherein the coil assembly comprises a coil mounting plate, a first coil antenna mounted on the coil mounting plate, and a coil adjusting mechanism configured to adjust the alignment of the first coil antenna relative to the process volume.

摘要翻译： 本发明通常提供了用于调整电感耦合等离子体室中的等离子体密度分布的装置和方法。 本发明的一个实施例提供了一种被配置用于处理衬底的装置。 该装置包括限定被配置成在其中处理衬底的处理体积的室主体和耦合到处理体积外的室主体的线圈组件，其中线圈组件包括线圈安装板，安装在线圈安装件上的第一线圈天线 板和线圈调整机构，被配置为调节第一线圈天线相对于处理体积的对准。

公开(公告)号：US20090162570A1

公开(公告)日：2009-06-25

申请号：US11960111

申请日：2007-12-19

申请人： Johanes F. Swenberg ,  Wei Liu ,  Hanh D. Nguyen ,  Son T. Nguyen ,  Roger Curtis ,  Philip A. Bottini ,  Michael J. Mark ,  Theresa Kramer Guarini ,  Woong Choi

发明人： Johanes F. Swenberg ,  Wei Liu ,  Hanh D. Nguyen ,  Son T. Nguyen ,  Roger Curtis ,  Philip A. Bottini ,  Michael J. Mark ,  Theresa Kramer Guarini ,  Woong Choi

IPC分类号： H05H1/24 ,  C23C16/503

CPC分类号： H01J37/321 ,  H01J37/3211 ,  H01J37/32174

摘要： The present invention generally provides apparatus and methods for processing a semiconductor substrate. Particularly, the present invention provides an inductively coupled plasma reactor having improved process uniformity. One embodiment of the present invention provides an apparatus for processing a substrate comprising a chamber body defining a process volume configured to process the substrate therein, an adjustable coil assembly coupled to the chamber body outside the process volume, a supporting pedestal disposed in the process volume and configured to support the substrate therein, and a gas injection assembly configured to supply a process gas towards a first process zone and a second process zone independently.

摘要翻译： 本发明通常提供了用于处理半导体衬底的装置和方法。 特别地，本发明提供了具有改进的工艺均匀性的电感耦合等离子体反应器。 本发明的一个实施例提供了一种用于处理衬底的装置，其包括限定被配置为在其中处理衬底的处理体积的室主体，耦合到处理体积外部的室主体的可调节线圈组件，设置在处理体积中的支撑座 并且被配置为在其中支撑衬底;以及气体注入组件，其构造成独立地朝向第一处理区域和第二处理区域提供处理气体。

公开(公告)号：US20090159425A1

公开(公告)日：2009-06-25

申请号：US11960246

申请日：2007-12-19

申请人： Wei Liu ,  Johanes F. Swenberg ,  Hanh D. Nguyen ,  Son T. Nguyen ,  Roger Curtis ,  Philip A. Bottini

发明人： Wei Liu ,  Johanes F. Swenberg ,  Hanh D. Nguyen ,  Son T. Nguyen ,  Roger Curtis ,  Philip A. Bottini

IPC分类号： H05H1/24

CPC分类号： H01J37/321 ,  H01J37/3211 ,  H01J37/32174

摘要： The present invention generally provides apparatus and method for adjusting plasma density distribution in an inductively coupled plasma chamber. One embodiment of the present invention provides an apparatus configured for processing a substrate. The apparatus comprises a chamber body defining a process volume configured to process the substrate therein, and a coil assembly coupled to the chamber body outside the process volume, wherein the coil assembly comprises a coil mounting plate, a first coil antenna mounted on the coil mounting plate, and a coil adjusting mechanism configured to adjust the alignment of the first coil antenna relative to the process volume.

摘要翻译： 本发明通常提供了用于调整电感耦合等离子体室中的等离子体密度分布的装置和方法。 本发明的一个实施例提供了一种被配置用于处理衬底的装置。 该装置包括限定被配置成在其中处理衬底的处理体积的室主体和耦合到处理体积外的室主体的线圈组件，其中线圈组件包括线圈安装板，安装在线圈安装件上的第一线圈天线 板和线圈调整机构，被配置为调节第一线圈天线相对于处理体积的对准。