发明申请
US20100218822A1 COMPPSITE FILM FOR SUPERSTRATE SOLAR CELL, METHOD FOR PRODUCING THE COMPOSITE FILM FOR SUPERSTRATE SOLAR CELL, COMPOSITE FILM FOR SUBSTRATE SOLAR CELL, AND METHOD FOR PORDUCING THE COMPOSITE FILM FOR SUBSTRATE SOLAR CELL
有权
用于超级太阳能电池的组合膜，用于制造用于超级太阳能电池的复合膜的方法，用于衬底太阳能电池的复合膜，以及用于衬底太阳能电池的复合膜的方法
- 专利标题： COMPPSITE FILM FOR SUPERSTRATE SOLAR CELL, METHOD FOR PRODUCING THE COMPOSITE FILM FOR SUPERSTRATE SOLAR CELL, COMPOSITE FILM FOR SUBSTRATE SOLAR CELL, AND METHOD FOR PORDUCING THE COMPOSITE FILM FOR SUBSTRATE SOLAR CELL
- 专利标题（中）： 用于超级太阳能电池的组合膜，用于制造用于超级太阳能电池的复合膜的方法，用于衬底太阳能电池的复合膜，以及用于衬底太阳能电池的复合膜的方法
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申请号： US12733585申请日： 2008-09-12
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公开(公告)号： US20100218822A1公开(公告)日： 2010-09-02
- 发明人: Kazuhiko Yamasaki , Toshiharu Hayashi , Masahide Arai , Satoko Ogawa , Yoshiaki Takata
- 申请人： Kazuhiko Yamasaki , Toshiharu Hayashi , Masahide Arai , Satoko Ogawa , Yoshiaki Takata
- 申请人地址： JP Chiyoda-ku
- 专利权人： MITSUBISHI MATERIALS CORPORATION
- 当前专利权人： MITSUBISHI MATERIALS CORPORATION
- 当前专利权人地址： JP Chiyoda-ku
- 优先权： JP2007-236546 20070912; JP2008-205849 20080808; JP2008-205862 20080808; JP2008-205867 20080808; JP2008-205870 20080808; JP2008-224497 20080902; JP2008-224499 20080902; JP2008-224508 20080902; JP2008-224513 20080902; JP2008-224515 20080902
- 国际申请： PCT/JP2008/066605 WO 20080912
- 主分类号： H01L31/0256
- IPC分类号： H01L31/0256 ; B05D5/12
摘要：
A composite film for a superstrate solar cell or a substrate solar cell has a transparent conductive film and a conductive reflective film, wherein the transparent conductive film is formed by using a wet coating method to apply a transparent conductive film composition or dispersion containing microparticles of a conductive oxide, the conductive reflective film is formed by using a wet coating method to apply a conductive reflective film composition containing metal nanoparticles, the average diameter of holes occurring at the contact surface of the conductive reflective film on either the side of the photovoltaic layer or the side of the transparent conductive film is not more than 100 nm, the average depth at which the holes are positioned is not more than 100 nm, and the number density of the holes is not more than 30 holes/μm2.