发明申请
- 专利标题： FORMING INTEGRATED CIRCUITS WITH REPLACEMENT METAL GATE ELECTRODES
- 专利标题（中）： 形成具有更换金属门电极的集成电路
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申请号： US12781084申请日： 2010-05-17
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公开(公告)号： US20100219456A1公开(公告)日： 2010-09-02
- 发明人: Jack Kavalieros , Justin K. Brask , Mark L. Doczy , Matthew V. Metz , Suman Datta , Uday Shah , Robert S. Chau
- 申请人： Jack Kavalieros , Justin K. Brask , Mark L. Doczy , Matthew V. Metz , Suman Datta , Uday Shah , Robert S. Chau
- 主分类号： H01L29/78
- IPC分类号： H01L29/78 ; H01L21/283 ; H01L21/28
摘要：
In a metal gate replacement process, a stack of at least two polysilicon layers or other materials may be formed. Sidewall spacers may be formed on the stack. The stack may then be planarized. Next, the upper layer of the stack may be selectively removed. Then, the exposed portions of the sidewall spacers may be selectively removed. Finally, the lower portion of the stack may be removed to form a T-shaped trench which may be filled with the metal replacement.
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