发明申请
- 专利标题： Nanoelectronic structure and method of producing such
- 专利标题（中）： 纳米电子结构及其制造方法
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申请号： US12662962申请日： 2010-05-13
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公开(公告)号： US20100221882A1公开(公告)日： 2010-09-02
- 发明人: Lars Ivar Samuelson , Patrick Svensson , Jonas Ohlsson , Truls Lowgren
- 申请人： Lars Ivar Samuelson , Patrick Svensson , Jonas Ohlsson , Truls Lowgren
- 专利权人： QuNano AB
- 当前专利权人： QuNano AB
- 优先权： SE0602840-1 20061222
- 主分类号： H01L21/336
- IPC分类号： H01L21/336
摘要：
The present invention relates to semiconductor devices comprising semiconductor nanoelements. In particular the invention relates to devices having a volume element having a larger diameter than the nanoelement arranged in epitaxial connection to the nanoelement. The volume element is being doped in order to provide a high charge carrier injection into the nanoelement and a low access resistance in an electrical connection. The nanoelement may be upstanding from a semiconductor substrate. A concentric layer of low resistivity material forms on the volume element forms a contact.
公开/授权文献
- US08067299B2 Nanoelectronic structure and method of producing such 公开/授权日：2011-11-29
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