发明申请
- 专利标题： TEST PATTERN STRUCTURE
- 专利标题（中）： 测试图案结构
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申请号： US12397662申请日： 2009-03-04
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公开(公告)号： US20100227131A1公开(公告)日： 2010-09-09
- 发明人: Da-Jiang Yang , Chih-Ping Lee , Rui-Huang Cheng , Xing-Hua Zhang , Xu Ma , Xiao-Fei Han , Hong Ma , Hong Liao , Yuan-Li Ding
- 申请人： Da-Jiang Yang , Chih-Ping Lee , Rui-Huang Cheng , Xing-Hua Zhang , Xu Ma , Xiao-Fei Han , Hong Ma , Hong Liao , Yuan-Li Ding
- 申请人地址： TW Hsinchu
- 专利权人： United Microelectronics Corp.
- 当前专利权人： United Microelectronics Corp.
- 当前专利权人地址： TW Hsinchu
- 主分类号： B32B3/10
- IPC分类号： B32B3/10
摘要：
A test pattern structure including a first conductive layer and a second conductive layer is provided. The second conductive layer is directly disposed on the first conductive layer and connected to the first conductive layer through a plurality of connection interfaces. The test pattern structure of the present invention can detect the interconnection failure quickly and correctly without SEM identification.
公开/授权文献
- US07989804B2 Test pattern structure 公开/授权日：2011-08-02
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