发明申请
- 专利标题: SEMICONDUCTOR DEVICE
- 专利标题(中): 半导体器件
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申请号: US12787154申请日: 2010-05-25
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公开(公告)号: US20100231304A1公开(公告)日: 2010-09-16
- 发明人: Iwamichi Kohjiro , Yasuhiro Nunogawa , Sakae Kikuchi , Shizuo Kondo , Tetsuaki Adachi , Osamu Kagaya , Kenji Sekine , Eiichi Hase , Kiichi Yamashita
- 申请人: Iwamichi Kohjiro , Yasuhiro Nunogawa , Sakae Kikuchi , Shizuo Kondo , Tetsuaki Adachi , Osamu Kagaya , Kenji Sekine , Eiichi Hase , Kiichi Yamashita
- 申请人地址: JP Tokyo
- 专利权人: RENESAS TECHNOLOGY CORP.
- 当前专利权人: RENESAS TECHNOLOGY CORP.
- 当前专利权人地址: JP Tokyo
- 优先权: JP10190809 19980706; JP1141045 19990219
- 主分类号: H03F3/04
- IPC分类号: H03F3/04
摘要:
In a semiconductor device such as a high-frequency power amplifier module, a plurality of amplifying means are formed on a semiconductor chip which is mounted on a main surface of a wiring substrate, and electrodes of the semiconductor chip are electrically connected by wires to electrodes of the wiring substrate. In order to make the high-frequency power amplifier module small in size, a substrate-side bonding electrode electrically connected to a wire set at a fixed reference electric potential is place at a location farther from a side of the semiconductor chip than a substrate-side output electrode electrically connected to an output wire. A substrate-side input electrode electrically connected to an input wire is located at a distance from the side of the semiconductor chip about equal to the distance from the side of the semiconductor chip to the substrate-side output electrode, or at a location farther from the side of the semiconductor chip than the substrate-side bonding electrode is.
公开/授权文献
- US08295057B2 Semiconductor device 公开/授权日:2012-10-23