公开(公告)号：US08295057B2

公开(公告)日：2012-10-23

申请号：US12787154

申请日：2010-05-25

申请人： Iwamichi Kohjiro ,  Yasuhiro Nunogawa ,  Sakae Kikuchi ,  Shizuo Kondo ,  Tetsuaki Adachi ,  Osamu Kagaya ,  Kenji Sekine ,  Eiichi Hase ,  Kiichi Yamashita

发明人： Iwamichi Kohjiro ,  Yasuhiro Nunogawa ,  Sakae Kikuchi ,  Shizuo Kondo ,  Tetsuaki Adachi ,  Osamu Kagaya ,  Kenji Sekine ,  Eiichi Hase ,  Kiichi Yamashita

IPC分类号： H05K7/02 ,  H05K7/06 ,  H05K7/08 ,  H05K7/10

CPC分类号： H01L25/16 ,  H01L23/49844 ,  H01L23/552 ,  H01L23/645 ,  H01L23/66 ,  H01L24/06 ,  H01L24/48 ,  H01L24/49 ,  H01L2223/6611 ,  H01L2223/6644 ,  H01L2224/05554 ,  H01L2224/05599 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48799 ,  H01L2224/49113 ,  H01L2224/49175 ,  H01L2224/49433 ,  H01L2224/85399 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01078 ,  H01L2924/01082 ,  H01L2924/09701 ,  H01L2924/10161 ,  H01L2924/10253 ,  H01L2924/1305 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/15153 ,  H01L2924/1517 ,  H01L2924/19105 ,  H01L2924/19107 ,  H01L2924/30107 ,  H01L2924/3025 ,  H03F1/56 ,  H03F3/195 ,  H03F3/213 ,  H03F3/604 ,  H03F2200/12 ,  H03F2200/168 ,  H03F2200/222 ,  H03F2200/318 ,  H03F2200/387 ,  H03F2200/408 ,  H03F2200/451 ,  H03H7/383 ,  H01L2924/00 ,  H01L2224/45099

摘要： In a semiconductor device such as a high-frequency power amplifier module, a plurality of amplifying means are formed on a semiconductor chip which is mounted on a main surface of a wiring substrate, and electrodes of the semiconductor chip are electrically connected by wires to electrodes of the wiring substrate. In order to make the high-frequency power amplifier module small in size, a substrate-side bonding electrode electrically connected to a wire set at a fixed reference electric potential is place at a location farther from a side of the semiconductor chip than a substrate-side output electrode electrically connected to an output wire. A substrate-side input electrode electrically connected to an input wire is located at a distance from the side of the semiconductor chip about equal to the distance from the side of the semiconductor chip to the substrate-side output electrode, or at a location farther from the side of the semiconductor chip than the substrate-side bonding electrode is.

摘要翻译： 在诸如高频功率放大器模块的半导体器件中，在安装在布线基板的主表面上的半导体芯片上形成多个放大装置，并且半导体芯片的电极通过导线电连接到电极 的布线基板。 为了使高频功率放大器模块尺寸变小，将电连接到固定基准电位的导线的基板侧接合电极位于距离半导体芯片的一侧更靠近基板侧接合电极的位置， 电连接到输出线。 电连接到输入线的基板侧输入电极位于距离半导体芯片侧的距离大约等于从半导体芯片的侧面到基板侧输出电极的距离处，或者位于距离半导体芯片 半导体芯片的侧面比基板侧接合电极为止。

公开(公告)号：US07262480B2

公开(公告)日：2007-08-28

申请号：US10433986

申请日：2001-03-21

申请人： Toshihiko Kyogoku ,  Tadashi Kodu ,  Kiyoharu Mochiduki ,  Sakae Kikuchi ,  Akio Ishidu ,  Yoshihiko Kobayashi ,  Masashi Maruyama ,  Iwamichi Kojiro ,  Susumu Sato

发明人： Toshihiko Kyogoku ,  Tadashi Kodu ,  Kiyoharu Mochiduki ,  Sakae Kikuchi ,  Akio Ishidu ,  Yoshihiko Kobayashi ,  Masashi Maruyama ,  Iwamichi Kojiro ,  Susumu Sato

IPC分类号： H01L29/00

CPC分类号： H01L23/645 ,  H01F17/02 ,  H01F27/292 ,  H01L23/66 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L2223/6644 ,  H01L2224/45015 ,  H01L2224/45147 ,  H01L2224/48227 ,  H01L2224/49175 ,  H01L2924/00014 ,  H01L2924/01012 ,  H01L2924/01015 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01078 ,  H01L2924/09701 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/15313 ,  H01L2924/19041 ,  H01L2924/19104 ,  H01L2924/19105 ,  H01L2924/30107 ,  H01L2924/3011 ,  H01L2924/3025 ,  H03F3/24 ,  H03F3/602 ,  H03F3/72 ,  H03F2200/429 ,  H03F2203/7236 ,  H04B2001/0408 ,  H05K1/181 ,  H05K13/028 ,  Y02P70/611 ,  H01L2924/00 ,  H01L2924/2076 ,  H01L2224/05599

摘要： A high frequency power amplifying device has two amplifying lines. Each amplifying line has a configuration in which a plurality of amplifying stages are connected in cascade having two source voltage terminals, of which one is connected to the first amplifying stage of one amplifying line and to the remaining amplifying stages of the other amplifying line, and the other, to the first amplifying stage of the latter amplifying line and to the remaining amplifying stages of the former amplifying line. An air core coil with a low D.C. resistance, formed by spirally winding a copper wire of about 0.1 mm in diameter, is connected in series between the final amplifying stage of each amplifying line and the source voltage terminal.

摘要翻译： 高频功率放大装置具有两条放大线。 每个放大线具有其中多个放大级串联连接的配置，其中两个源极电压端子连接到一个放大线路的第一放大级和另一个放大线路的剩余放大级， 另一个到后一放大线的第一放大级和前一放大线的剩余放大级。 通过螺旋卷绕直径约0.1mm的铜线形成的具有低直流电阻的空芯线圈串联连接在每个放大线的最终放大级与源极电压端子之间。

公开(公告)号：US07119004B2

公开(公告)日：2006-10-10

申请号：US10486707

申请日：2002-05-28

申请人： Tsutomu Ida ,  Yoshihiko Kobayashi ,  Masakazu Hashizume ,  Yoshinori Shiokawa ,  Sakae Kikuchi

发明人： Tsutomu Ida ,  Yoshihiko Kobayashi ,  Masakazu Hashizume ,  Yoshinori Shiokawa ,  Sakae Kikuchi

IPC分类号： H01L21/44

CPC分类号： H01L25/0655 ,  H01L23/13 ,  H01L23/66 ,  H01L24/06 ,  H01L24/29 ,  H01L24/32 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L24/83 ,  H01L24/85 ,  H01L2223/6644 ,  H01L2224/0401 ,  H01L2224/05553 ,  H01L2224/05554 ,  H01L2224/05639 ,  H01L2224/05647 ,  H01L2224/291 ,  H01L2224/29101 ,  H01L2224/32225 ,  H01L2224/45015 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48639 ,  H01L2224/48647 ,  H01L2224/49113 ,  H01L2224/49171 ,  H01L2224/49175 ,  H01L2224/73265 ,  H01L2224/81143 ,  H01L2224/83192 ,  H01L2224/83801 ,  H01L2224/85 ,  H01L2224/85205 ,  H01L2224/92247 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01029 ,  H01L2924/01032 ,  H01L2924/01047 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/0132 ,  H01L2924/014 ,  H01L2924/09701 ,  H01L2924/10161 ,  H01L2924/10329 ,  H01L2924/12041 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/13064 ,  H01L2924/14 ,  H01L2924/15151 ,  H01L2924/15153 ,  H01L2924/15165 ,  H01L2924/1517 ,  H01L2924/15313 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01L2924/19105 ,  H01L2924/20752 ,  H01L2924/30105 ,  H01L2924/30107 ,  H01L2924/3011 ,  H01L2924/3025 ,  H01L2224/78 ,  H01L2924/00 ,  H01L2924/01031 ,  H01L2924/01033 ,  H01L2924/00012

摘要： The variation of the parasitic inductance generated at the output terminal of a transistor in the final stage of a multistage amplifier unit is reduced. One side of the semiconductor chip that includes the final stage transistor is put in contact with the inner wall of a square recess formed in a wiring substrate. The semiconductor chip is positioned and fixed accurately at the bottom of the recess, whereby the drain wire of the transistor is fixed. Then, a chip edge at which the drain electrode is disposed on top of the chip is put in contact with the inner wall of the recess, which is closer to the drain bonding pad. A metallized layer is formed of the same size as that of the chip at the bottom of the recess and a fusion bonding material is supplied on the metallized layer.

摘要翻译： 在多级放大器单元的最后级中的晶体管的输出端产生的寄生电感的变化减小。 包括末级晶体管的半导体芯片的一侧与形成在布线基板中的正方形凹部的内壁接触。 将半导体芯片精确地定位并固定在凹部的底部，由此使晶体管的漏极线固定。 然后，将漏电极设置在芯片顶部的芯片边缘与更靠近漏极焊盘的凹部的内壁接触。 金属化层与凹槽底部的芯片的尺寸相同，并且在金属化层上提供熔接材料。

公开(公告)号：US20050269590A1

公开(公告)日：2005-12-08

申请号：US11194701

申请日：2005-08-02

申请人： Iwamichi Kohjiro ,  Yasuhiro Nunogawa ,  Sakae Kikuchi ,  Shizuo Kondo ,  Tetsuaki Adachi ,  Osamu Kagaya ,  Kenji Sekine ,  Eiichi Hase ,  Kiichi Yamashita

发明人： Iwamichi Kohjiro ,  Yasuhiro Nunogawa ,  Sakae Kikuchi ,  Shizuo Kondo ,  Tetsuaki Adachi ,  Osamu Kagaya ,  Kenji Sekine ,  Eiichi Hase ,  Kiichi Yamashita

IPC分类号： H01L23/04 ,  H01L23/49 ,  H01L23/498 ,  H01L23/552 ,  H01L23/66 ,  H01L29/22 ,  H03F3/195 ,  H03F3/60 ,  H05K1/00 ,  H05K1/02 ,  H05K1/18 ,  H05K3/40

CPC分类号： H01L24/06 ,  H01L23/04 ,  H01L23/49805 ,  H01L23/49822 ,  H01L23/49838 ,  H01L23/49844 ,  H01L23/552 ,  H01L23/645 ,  H01L23/66 ,  H01L24/48 ,  H01L24/49 ,  H01L25/16 ,  H01L2223/6611 ,  H01L2223/6627 ,  H01L2223/6644 ,  H01L2223/6655 ,  H01L2224/05553 ,  H01L2224/05554 ,  H01L2224/05599 ,  H01L2224/45139 ,  H01L2224/45147 ,  H01L2224/4554 ,  H01L2224/45669 ,  H01L2224/48011 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/484 ,  H01L2224/48799 ,  H01L2224/49111 ,  H01L2224/49113 ,  H01L2224/4912 ,  H01L2224/49175 ,  H01L2224/49433 ,  H01L2224/73265 ,  H01L2224/85399 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01021 ,  H01L2924/01023 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01047 ,  H01L2924/01051 ,  H01L2924/01078 ,  H01L2924/09701 ,  H01L2924/10161 ,  H01L2924/10253 ,  H01L2924/1305 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/15153 ,  H01L2924/1517 ,  H01L2924/15173 ,  H01L2924/15313 ,  H01L2924/15787 ,  H01L2924/16152 ,  H01L2924/19032 ,  H01L2924/19105 ,  H01L2924/19107 ,  H01L2924/30107 ,  H01L2924/3011 ,  H01L2924/3025 ,  H03F1/56 ,  H03F3/195 ,  H03F3/213 ,  H03F3/604 ,  H03F2200/12 ,  H03F2200/168 ,  H03F2200/222 ,  H03F2200/255 ,  H03F2200/318 ,  H03F2200/387 ,  H03F2200/408 ,  H03F2200/411 ,  H03F2200/423 ,  H03F2200/451 ,  H03F2200/543 ,  H03H7/383 ,  H05K1/0243 ,  H05K1/0298 ,  H05K1/183 ,  H05K3/403 ,  H01L2924/05432 ,  H01L2924/2065 ,  H01L2224/45099 ,  H01L2924/00

摘要： In a semiconductor device such as a high-frequency power amplifier module, a plurality of amplifying means are formed on a semiconductor chip which is mounted on a main surface of a wiring substrate, and electrodes of the semiconductor chip are electrically connected by wires to electrodes of the wiring substrate. In order to make the high-frequency power amplifier module small in size, a substrate-side bonding electrode electrically connected to a wire set at a fixed reference electric potential is place at a location farther from a side of the semiconductor chip than a substrate-side output electrode electrically connected to an output wire. A substrate-side input electrode electrically connected to an input wire is located at a distance from the side of the semiconductor chip about equal to the distance from the side of the semiconductor chip to the substrate-side output electrode, or at a location farther from the side of the semiconductor chip than the substrate-side bonding electrode is.

摘要翻译： 在诸如高频功率放大器模块的半导体器件中，在安装在布线基板的主表面上的半导体芯片上形成多个放大装置，并且半导体芯片的电极通过导线电连接到电极 的布线基板。 为了使高频功率放大器模块尺寸变小，将电连接到固定基准电位的导线的基板侧接合电极位于距离半导体芯片的一侧更靠近基板侧接合电极的位置， 电连接到输出线。 电连接到输入线的基板侧输入电极位于距离半导体芯片侧的距离大约等于从半导体芯片的侧面到基板侧输出电极的距离处，或者位于距离半导体芯片 半导体芯片的侧面比基板侧接合电极为止。

公开(公告)号：US4107727A

公开(公告)日：1978-08-15

申请号：US819053

申请日：1977-07-26

申请人： Ryuichi Ikezawa ,  Atsushi Sasayama ,  Sakae Kikuchi

发明人： Ryuichi Ikezawa ,  Atsushi Sasayama ,  Sakae Kikuchi

IPC分类号： H01L23/29 ,  H01L23/28 ,  H01L23/31 ,  H01L23/433 ,  H01L23/495

CPC分类号： H01L23/49562 ,  H01L23/3121 ,  H01L23/4334 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/49171 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L2924/01014 ,  H01L2924/01079

摘要： A semiconductor device is disclosed wherein a semiconductor pellet is attached on a heat sink of a flange, leads are connected to corresponding electrodes of the semiconductor pellet directly or through wires, the semiconductor pellet and portions of the leads are sealed by resin mold on the flange and top outer periphery of the heat sink is formed with a projection to prevent peel-off of the resin mold and cracking of the resin mold which would otherwise occur due to difference between coefficients of thermal expansion of the flange and the resin mold.

摘要翻译： 公开了一种半导体器件，其中将半导体芯片附接在凸缘的散热片上，引线直接或通过导线连接到半导体芯片的相应电极，半导体芯片和引线的部分通过树脂模密封在凸缘上 并且散热器的顶部外周形成有突起，以防止由于凸缘和树脂模具的热膨胀系数之间的差异而导致的树脂模具的剥离和树脂模具的开裂。

公开(公告)号：US20100231304A1

公开(公告)日：2010-09-16

申请号：US12787154

申请日：2010-05-25

申请人： Iwamichi Kohjiro ,  Yasuhiro Nunogawa ,  Sakae Kikuchi ,  Shizuo Kondo ,  Tetsuaki Adachi ,  Osamu Kagaya ,  Kenji Sekine ,  Eiichi Hase ,  Kiichi Yamashita

发明人： Iwamichi Kohjiro ,  Yasuhiro Nunogawa ,  Sakae Kikuchi ,  Shizuo Kondo ,  Tetsuaki Adachi ,  Osamu Kagaya ,  Kenji Sekine ,  Eiichi Hase ,  Kiichi Yamashita

IPC分类号： H03F3/04

CPC分类号： H01L25/16 ,  H01L23/49844 ,  H01L23/552 ,  H01L23/645 ,  H01L23/66 ,  H01L24/06 ,  H01L24/48 ,  H01L24/49 ,  H01L2223/6611 ,  H01L2223/6644 ,  H01L2224/05554 ,  H01L2224/05599 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48799 ,  H01L2224/49113 ,  H01L2224/49175 ,  H01L2224/49433 ,  H01L2224/85399 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01078 ,  H01L2924/01082 ,  H01L2924/09701 ,  H01L2924/10161 ,  H01L2924/10253 ,  H01L2924/1305 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/15153 ,  H01L2924/1517 ,  H01L2924/19105 ,  H01L2924/19107 ,  H01L2924/30107 ,  H01L2924/3025 ,  H03F1/56 ,  H03F3/195 ,  H03F3/213 ,  H03F3/604 ,  H03F2200/12 ,  H03F2200/168 ,  H03F2200/222 ,  H03F2200/318 ,  H03F2200/387 ,  H03F2200/408 ,  H03F2200/451 ,  H03H7/383 ,  H01L2924/00 ,  H01L2224/45099

摘要： In a semiconductor device such as a high-frequency power amplifier module, a plurality of amplifying means are formed on a semiconductor chip which is mounted on a main surface of a wiring substrate, and electrodes of the semiconductor chip are electrically connected by wires to electrodes of the wiring substrate. In order to make the high-frequency power amplifier module small in size, a substrate-side bonding electrode electrically connected to a wire set at a fixed reference electric potential is place at a location farther from a side of the semiconductor chip than a substrate-side output electrode electrically connected to an output wire. A substrate-side input electrode electrically connected to an input wire is located at a distance from the side of the semiconductor chip about equal to the distance from the side of the semiconductor chip to the substrate-side output electrode, or at a location farther from the side of the semiconductor chip than the substrate-side bonding electrode is.

摘要翻译： 在诸如高频功率放大器模块的半导体器件中，在安装在布线基板的主表面上的半导体芯片上形成多个放大装置，并且半导体芯片的电极通过导线电连接到电极 的布线基板。 为了使高频功率放大器模块尺寸变小，将电连接到固定基准电位的导线的基板侧接合电极位于距离半导体芯片的一侧更靠近基板侧接合电极的位置， 电连接到输出线。 电连接到输入线的基板侧输入电极位于与半导体芯片的侧面相距一定距离处，等于从半导体芯片侧到基板侧输出电极的距离，或者距离半导体芯片 半导体芯片的侧面比基板侧接合电极为止。

公开(公告)号：US07525813B2

公开(公告)日：2009-04-28

申请号：US11905421

申请日：2007-10-01

申请人： Iwamichi Kohjiro ,  Yasuhiro Nunogawa ,  Sakae Kikuchi ,  Shizuo Kondo ,  Tetsuaki Adachi ,  Osamu Kagaya ,  Kenji Sekine ,  Eiichi Hase ,  Kiichi Yamashita

发明人： Iwamichi Kohjiro ,  Yasuhiro Nunogawa ,  Sakae Kikuchi ,  Shizuo Kondo ,  Tetsuaki Adachi ,  Osamu Kagaya ,  Kenji Sekine ,  Eiichi Hase ,  Kiichi Yamashita

IPC分类号： H05K7/02 ,  H05K7/06 ,  H05K7/08 ,  H05K7/10

CPC分类号： H01L25/16 ,  H01L23/49844 ,  H01L23/552 ,  H01L23/645 ,  H01L23/66 ,  H01L24/06 ,  H01L24/48 ,  H01L24/49 ,  H01L2223/6611 ,  H01L2223/6644 ,  H01L2224/05554 ,  H01L2224/05599 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48799 ,  H01L2224/49113 ,  H01L2224/49175 ,  H01L2224/49433 ,  H01L2224/85399 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01078 ,  H01L2924/01082 ,  H01L2924/09701 ,  H01L2924/10161 ,  H01L2924/10253 ,  H01L2924/1305 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/15153 ,  H01L2924/1517 ,  H01L2924/19105 ,  H01L2924/19107 ,  H01L2924/30107 ,  H01L2924/3025 ,  H03F1/56 ,  H03F3/195 ,  H03F3/213 ,  H03F3/604 ,  H03F2200/12 ,  H03F2200/168 ,  H03F2200/222 ,  H03F2200/318 ,  H03F2200/387 ,  H03F2200/408 ,  H03F2200/451 ,  H03H7/383 ,  H01L2924/00 ,  H01L2224/45099

摘要： In a semiconductor device such as a high-frequency power amplifier module, a plurality of amplifying means are formed on a semiconductor chip which is mounted on a main surface of a wiring substrate, and electrodes of the semiconductor chip are electrically connected by wires to electrodes of the wiring substrate. In order to make the high-frequency power amplifier module small in size, a substrate-side bonding electrode electrically connected to a wire set at a fixed reference electric potential is place at a location farther from a side of the semiconductor chip than a substrate-side output electrode electrically connected to an output wire. A substrate-side input electrode electrically connected to an input wire is located at a distance from the side of the semiconductor chip about equal to the distance from the side of the semiconductor chip to the substrate-side output electrode, or at a location farther from the side of the semiconductor chip than the substrate-side bonding electrode is.

公开(公告)号：US20060118970A1

公开(公告)日：2006-06-08

申请号：US11326341

申请日：2006-01-06

申请人： Tsutomu Ida ,  Yoshihiko Kobayashi ,  Masakazu Hashizume ,  Yoshinori Shiokawa ,  Sakae Kikuchi

发明人： Tsutomu Ida ,  Yoshihiko Kobayashi ,  Masakazu Hashizume ,  Yoshinori Shiokawa ,  Sakae Kikuchi

IPC分类号： H01L23/48 ,  H01L23/52 ,  H01L23/34

CPC分类号： H01L25/0655 ,  H01L23/13 ,  H01L23/66 ,  H01L24/06 ,  H01L24/29 ,  H01L24/32 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L24/83 ,  H01L24/85 ,  H01L2223/6644 ,  H01L2224/0401 ,  H01L2224/05553 ,  H01L2224/05554 ,  H01L2224/05639 ,  H01L2224/05647 ,  H01L2224/291 ,  H01L2224/29101 ,  H01L2224/32225 ,  H01L2224/45015 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48639 ,  H01L2224/48647 ,  H01L2224/49113 ,  H01L2224/49171 ,  H01L2224/49175 ,  H01L2224/73265 ,  H01L2224/81143 ,  H01L2224/83192 ,  H01L2224/83801 ,  H01L2224/85 ,  H01L2224/85205 ,  H01L2224/92247 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01029 ,  H01L2924/01032 ,  H01L2924/01047 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/0132 ,  H01L2924/014 ,  H01L2924/09701 ,  H01L2924/10161 ,  H01L2924/10329 ,  H01L2924/12041 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/13064 ,  H01L2924/14 ,  H01L2924/15151 ,  H01L2924/15153 ,  H01L2924/15165 ,  H01L2924/1517 ,  H01L2924/15313 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01L2924/19105 ,  H01L2924/20752 ,  H01L2924/30105 ,  H01L2924/30107 ,  H01L2924/3011 ,  H01L2924/3025 ,  H01L2224/78 ,  H01L2924/00 ,  H01L2924/01031 ,  H01L2924/01033 ,  H01L2924/00012

摘要： The variation of the parasitic inductance generated at the output terminal of a transistor in the final stage of a multistage amplifier unit is reduced. One side of the semiconductor chip that includes the final stage transistor is put in contact with the inner wall of a square recess formed in a wiring substrate. The semiconductor chip is positioned and fixed accurately at the bottom of the recess, whereby the drain wire of the transistor is fixed. Then, a chip edge at which the drain electrode is disposed on top of the chip is put in contact with the inner wall of the recess, which is closer to the drain bonding pad. A metallized layer is formed of the same size as that of the chip at the bottom of the recess and a fusion bonding material is supplied on the metallized layer.

摘要翻译： 在多级放大器单元的最后级中的晶体管的输出端产生的寄生电感的变化减小。 包括末级晶体管的半导体芯片的一侧与形成在布线基板中的正方形凹部的内壁接触。 将半导体芯片精确地定位并固定在凹部的底部，由此使晶体管的漏极线固定。 然后，将漏电极设置在芯片顶部的芯片边缘与更靠近漏极焊盘的凹部的内壁接触。 金属化层与凹槽底部的芯片的尺寸相同，并且在金属化层上提供熔接材料。

公开(公告)号：US06489680B2

公开(公告)日：2002-12-03

申请号：US09970668

申请日：2001-10-05

申请人： Iwamichi Kohjiro ,  Yasuhiro Nunogawa ,  Sakae Kikuchi ,  Shizuo Kondo ,  Tetsuaki Adachi ,  Osamu Kagaya ,  Kenji Sekine ,  Eiichi Hase ,  Kiichi Yamashita

发明人： Iwamichi Kohjiro ,  Yasuhiro Nunogawa ,  Sakae Kikuchi ,  Shizuo Kondo ,  Tetsuaki Adachi ,  Osamu Kagaya ,  Kenji Sekine ,  Eiichi Hase ,  Kiichi Yamashita

IPC分类号： H01L2348

CPC分类号： H01L24/06 ,  H01L23/04 ,  H01L23/49805 ,  H01L23/49822 ,  H01L23/49838 ,  H01L23/49844 ,  H01L23/552 ,  H01L23/645 ,  H01L23/66 ,  H01L24/48 ,  H01L24/49 ,  H01L25/16 ,  H01L2223/6611 ,  H01L2223/6627 ,  H01L2223/6644 ,  H01L2223/6655 ,  H01L2224/05553 ,  H01L2224/05554 ,  H01L2224/05599 ,  H01L2224/45139 ,  H01L2224/45147 ,  H01L2224/4554 ,  H01L2224/45669 ,  H01L2224/48011 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/484 ,  H01L2224/48799 ,  H01L2224/49111 ,  H01L2224/49113 ,  H01L2224/4912 ,  H01L2224/49175 ,  H01L2224/49433 ,  H01L2224/73265 ,  H01L2224/85399 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01021 ,  H01L2924/01023 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01047 ,  H01L2924/01051 ,  H01L2924/01078 ,  H01L2924/09701 ,  H01L2924/10161 ,  H01L2924/10253 ,  H01L2924/1305 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/15153 ,  H01L2924/1517 ,  H01L2924/15173 ,  H01L2924/15313 ,  H01L2924/15787 ,  H01L2924/16152 ,  H01L2924/19032 ,  H01L2924/19105 ,  H01L2924/19107 ,  H01L2924/30107 ,  H01L2924/3011 ,  H01L2924/3025 ,  H03F1/56 ,  H03F3/195 ,  H03F3/213 ,  H03F3/604 ,  H03F2200/12 ,  H03F2200/168 ,  H03F2200/222 ,  H03F2200/255 ,  H03F2200/318 ,  H03F2200/387 ,  H03F2200/408 ,  H03F2200/411 ,  H03F2200/423 ,  H03F2200/451 ,  H03F2200/543 ,  H03H7/383 ,  H05K1/0243 ,  H05K1/0298 ,  H05K1/183 ,  H05K3/403 ,  H01L2924/05432 ,  H01L2924/2065 ,  H01L2224/45099 ,  H01L2924/00

摘要： In a semiconductor device such as a high-frequency power amplifier module, a plurality of amplifying means are formed on a semiconductor chip which is mounted on a main surface of a wiring substrate, and electrodes of the semiconductor chip are electrically connected by wires to electrodes of the wiring substrate. In order to make the high-frequency power amplifier module small in size, a substrate-side bonding electrode electrically connected to a wire set at a fixed reference electric potential is place at a location farther from a side of the semiconductor chip than a substrate-side output electrode electrically connected to an output wire. A substrate-side input electrode electrically connected to an input wire is located at a distance from the side of the semiconductor chip about equal to the distance from the side of the semiconductor chip to the substrate-side output electrode, or at a location farther from the side of the semiconductor chip than the substrate-side bonding electrode is.

摘要翻译： 在诸如高频功率放大器模块的半导体器件中，在安装在布线基板的主表面上的半导体芯片上形成多个放大装置，并且半导体芯片的电极通过导线电连接到电极 的布线基板。 为了使高频功率放大器模块尺寸变小，将电连接到固定基准电位的导线的基板侧接合电极位于距离半导体芯片的一侧更靠近基板侧接合电极的位置， 电连接到输出线。 电连接到输入线的基板侧输入电极位于距离半导体芯片侧的距离大约等于从半导体芯片的侧面到基板侧输出电极的距离处，或者位于距离半导体芯片 半导体芯片的侧面比基板侧接合电极为止。

公开(公告)号：US06330165B1

公开(公告)日：2001-12-11

申请号：US09345505

申请日：1999-07-01

申请人： Iwamichi Kohjiro ,  Yasuhiro Nunogawa ,  Sakae Kikuchi ,  Shizuo Kondo ,  Tetsuaki Adachi ,  Osamu Kagaya ,  Kenji Sekine ,  Eiichi Hase ,  Kiichi Yamashita

发明人： Iwamichi Kohjiro ,  Yasuhiro Nunogawa ,  Sakae Kikuchi ,  Shizuo Kondo ,  Tetsuaki Adachi ,  Osamu Kagaya ,  Kenji Sekine ,  Eiichi Hase ,  Kiichi Yamashita

IPC分类号： H05K702

CPC分类号： H01L24/06 ,  H01L23/04 ,  H01L23/49805 ,  H01L23/49822 ,  H01L23/49838 ,  H01L23/49844 ,  H01L23/552 ,  H01L23/645 ,  H01L23/66 ,  H01L24/48 ,  H01L24/49 ,  H01L25/16 ,  H01L2223/6611 ,  H01L2223/6627 ,  H01L2223/6644 ,  H01L2223/6655 ,  H01L2224/05553 ,  H01L2224/05554 ,  H01L2224/05599 ,  H01L2224/45139 ,  H01L2224/45147 ,  H01L2224/4554 ,  H01L2224/45669 ,  H01L2224/48011 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/484 ,  H01L2224/48799 ,  H01L2224/49111 ,  H01L2224/49113 ,  H01L2224/4912 ,  H01L2224/49175 ,  H01L2224/49433 ,  H01L2224/73265 ,  H01L2224/85399 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01021 ,  H01L2924/01023 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01047 ,  H01L2924/01051 ,  H01L2924/01078 ,  H01L2924/09701 ,  H01L2924/10161 ,  H01L2924/10253 ,  H01L2924/1305 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/15153 ,  H01L2924/1517 ,  H01L2924/15173 ,  H01L2924/15313 ,  H01L2924/15787 ,  H01L2924/16152 ,  H01L2924/19032 ,  H01L2924/19105 ,  H01L2924/19107 ,  H01L2924/30107 ,  H01L2924/3011 ,  H01L2924/3025 ,  H03F1/56 ,  H03F3/195 ,  H03F3/213 ,  H03F3/604 ,  H03F2200/12 ,  H03F2200/168 ,  H03F2200/222 ,  H03F2200/255 ,  H03F2200/318 ,  H03F2200/387 ,  H03F2200/408 ,  H03F2200/411 ,  H03F2200/423 ,  H03F2200/451 ,  H03F2200/543 ,  H03H7/383 ,  H05K1/0243 ,  H05K1/0298 ,  H05K1/183 ,  H05K3/403 ,  H01L2924/05432 ,  H01L2924/2065 ,  H01L2224/45099 ,  H01L2924/00

摘要： In a semiconductor device such as a high-frequency power amplifier module, a plurality of amplifying means are formed on a semiconductor chip which is mounted on a main surface of a wiring substrate, and electrodes of the semiconductor chip are electrically connected by wires to electrodes of the wiring substrate. In order to make the high-frequency power amplifier module small in size, a substrate-side bonding electrode electrically connected to a wire set at a fixed reference electric potential is place at a location farther from a side of the semiconductor chip than a substrate-side output electrode electrically connected to an output wire. A substrate-side input electrode electrically connected to an input wire is located at a distance from the side of the semiconductor chip about equal to the distance from the side of the semiconductor chip to the substrate-side output electrode, or at a location farther from the side of the semiconductor chip than the substrate-side bonding electrode is.

摘要翻译： 在诸如高频功率放大器模块的半导体器件中，在安装在布线基板的主表面上的半导体芯片上形成多个放大装置，并且半导体芯片的电极通过导线电连接到电极 的布线基板。 为了使高频功率放大器模块尺寸变小，将电连接到固定基准电位的导线的基板侧接合电极位于距离半导体芯片的一侧更靠近基板侧接合电极的位置， 电连接到输出线。 电连接到输入线的基板侧输入电极位于距离半导体芯片侧的距离大约等于从半导体芯片的侧面到基板侧输出电极的距离处，或者位于距离半导体芯片 半导体芯片的侧面比基板侧接合电极为止。