公开(公告)号：US07817437B2

公开(公告)日：2010-10-19

申请号：US12394421

申请日：2009-02-27

申请人： Iwamichi Kohjiro ,  Yasuhiro Nunogawa ,  Sakae Kikuchi ,  Shizuo Kondo ,  Tetsuaki Adachi ,  Osamu Kagaya ,  Kenji Sekine ,  Eiichi Hase ,  Kiichi Yamashita

发明人： Iwamichi Kohjiro ,  Yasuhiro Nunogawa ,  Sakae Kikuchi ,  Shizuo Kondo ,  Tetsuaki Adachi ,  Osamu Kagaya ,  Kenji Sekine ,  Eiichi Hase ,  Kiichi Yamashita

IPC分类号： H05K7/02 ,  H05K7/06 ,  H05K7/08 ,  H05K7/10

CPC分类号： H01L25/16 ,  H01L23/49844 ,  H01L23/552 ,  H01L23/645 ,  H01L23/66 ,  H01L24/06 ,  H01L24/48 ,  H01L24/49 ,  H01L2223/6611 ,  H01L2223/6644 ,  H01L2224/05554 ,  H01L2224/05599 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48799 ,  H01L2224/49113 ,  H01L2224/49175 ,  H01L2224/49433 ,  H01L2224/85399 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01078 ,  H01L2924/01082 ,  H01L2924/09701 ,  H01L2924/10161 ,  H01L2924/10253 ,  H01L2924/1305 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/15153 ,  H01L2924/1517 ,  H01L2924/19105 ,  H01L2924/19107 ,  H01L2924/30107 ,  H01L2924/3025 ,  H03F1/56 ,  H03F3/195 ,  H03F3/213 ,  H03F3/604 ,  H03F2200/12 ,  H03F2200/168 ,  H03F2200/222 ,  H03F2200/318 ,  H03F2200/387 ,  H03F2200/408 ,  H03F2200/451 ,  H03H7/383 ,  H01L2924/00 ,  H01L2224/45099

摘要： In a semiconductor device such as a high-frequency power amplifier module, a plurality of amplifying means are formed on a semiconductor chip which is mounted on a main surface of a wiring substrate, and electrodes of the semiconductor chip are electrically connected by wires to electrodes of the wiring substrate. In order to make the high-frequency power amplifier module small in size, a substrate-side bonding electrode electrically connected to a wire set at a fixed reference electric potential is place at a location farther from a side of the semiconductor chip than a substrate-side output electrode electrically connected to an output wire. A substrate-side input electrode electrically connected to an input wire is located at a distance from the side of the semiconductor chip about equal to the distance from the side of the semiconductor chip to the substrate-side output electrode, or at a location farther from the side of the semiconductor chip than the substrate-side bonding electrode is.

摘要翻译： 在诸如高频功率放大器模块的半导体器件中，在安装在布线基板的主表面上的半导体芯片上形成多个放大装置，并且半导体芯片的电极通过导线电连接到电极 的布线基板。 为了使高频功率放大器模块尺寸变小，将电连接到固定基准电位的导线的基板侧接合电极位于距离半导体芯片的一侧更靠近基板侧接合电极的位置， 电连接到输出线。 电连接到输入线的基板侧输入电极位于与半导体芯片的侧面相距一定距离处，等于从半导体芯片侧到基板侧输出电极的距离，或者距离半导体芯片 半导体芯片的侧面比基板侧接合电极为止。

公开(公告)号：US07015761B2

公开(公告)日：2006-03-21

申请号：US10975431

申请日：2004-10-29

申请人： Hidetoshi Matsumoto ,  Tomonori Tanoue ,  Satoshi Tanaka ,  Kiichi Yamashita

发明人： Hidetoshi Matsumoto ,  Tomonori Tanoue ,  Satoshi Tanaka ,  Kiichi Yamashita

IPC分类号： H03F3/68 ,  H03G3/20

CPC分类号： H03F1/56 ,  H03F1/0222 ,  H03F1/0261 ,  H03F1/0266 ,  H03F1/301 ,  H03F1/302 ,  H03F1/306 ,  H03F3/19 ,  H03F3/1935 ,  H03F2200/318 ,  H03F2200/453

摘要： A CDMA system is provided which includes a power amplifier module have a DC current amplifier. The DC and current amplifier detects a DC component of an input signal and amplifies this detected DC component. The power amplifier module also includes an amplifier which receives the current amplified by the DC current amplifier as an input current. The input signal supplied to the DC current amplifier changes in response to an input power level.

摘要翻译： 提供了一种CDMA系统，其包括具有DC电流放大器的功率放大器模块。 直流和电流放大器检测输入信号的直流分量，并放大该检测到的直流分量。 功率放大器模块还包括放大器，其接收由直流电流放大器放大的电流作为输入电流。 提供给DC电流放大器的输入信号响应于输入功率电平而改变。

公开(公告)号：US07001819B2

公开(公告)日：2006-02-21

申请号：US10750772

申请日：2004-01-05

申请人： Kazuhiro Mochizuki ,  Tohru Oka ,  Isao Ohbu ,  Kiichi Yamashita

发明人： Kazuhiro Mochizuki ,  Tohru Oka ,  Isao Ohbu ,  Kiichi Yamashita

IPC分类号： H01L21/8222

CPC分类号： H01L21/8252 ,  H01L27/0605 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/09701 ,  H01L2924/12032 ,  H01L2924/1305 ,  H01L2924/1423 ,  H01L2924/15153 ,  H01L2924/1517 ,  H01L2924/16152 ,  H01L2924/19041 ,  H01L2924/30107 ,  H03F1/302 ,  H01L2924/00014 ,  H01L2924/00

摘要： A semiconductor device comprising a plurality of heterojunction bipolar transistors with their base layer made of GaAsSb or InGaAs, a GaAs substrate, and a buffer layer placed between the base layer and the substrate is fabricated. The substrate and the buffer layer that lie directly under the intrinsic regions of a part or all of the plurality of heterojunction bipolar transistors are removed. Thereby, a semiconductor device using HBTs that can operate with a power supply voltage of 2V or below can be provided at reduced cost as a well-reliable product, and a power amplifier with high power conversion efficiency can be provided.

公开(公告)号：US20050146067A1

公开(公告)日：2005-07-07

申请号：US11025152

申请日：2004-12-30

申请人： Kiichi Yamashita ,  Tatsuya Wakamori ,  Masahito Mori ,  Mutsuhisa Miyamoto

发明人： Kiichi Yamashita ,  Tatsuya Wakamori ,  Masahito Mori ,  Mutsuhisa Miyamoto

IPC分类号： B29C31/04 ,  B29C39/10 ,  B29C39/24 ,  B29C39/44 ,  B29C44/42 ,  B29C44/58 ,  B29C67/24 ,  B60R13/08 ,  B29C44/12

CPC分类号： B60R13/08 ,  B29C31/041 ,  B29C39/10 ,  B29C39/24 ,  B29C39/44 ,  B29C44/424 ,  B29C44/581 ,  B29C67/246 ,  B29K2075/00 ,  B29K2105/04 ,  Y10T428/24273 ,  Y10T428/249953 ,  Y10T428/249976 ,  Y10T428/249981

摘要： An apparatus is disclosed for injecting an expandable or foaming material in a closed sectional structure of a body. The apparatus is suitable for mass-producing vehicles, such as automobiles efficiently. This apparatus is provided with a manipulator (38) movable to a desired position, a injector (50) fixed to the manipulator, a device (56) for supplying the expandable or foaming material to the injector, and a controller (40) adapted to control the position of the manipulator (10) so that the injector is set in a position in which the foaming material can be supplied to the closed sectional structure of the vehicle body through an injection port of the same closed sectional structure, and also adapted to control the supply device so that the foaming material can be injected and filled in the closed sectional structure thereof by only such an amount that was set in accordance with the volume of the inside of the sectional structure.

摘要翻译： 公开了一种用于将可膨胀或发泡材料注射到主体的封闭截面结构中的装置。 该装置适用于有效地大量生产车辆，如汽车。 该装置设置有可移动到期望位置的操纵器（38），固定到操纵器的注射器（50），用于将可膨胀或发泡材料供应到喷射器的装置（56），以及适于 控制所述操纵器（10）的位置，使得所述喷射器通过相同的封闭截面结构的喷射口设定在所述发泡材料能够供应到所述车身的所述封闭截面结构的位置，并且还适于 控制供应装置，使得发泡材料可以仅通过根据截面结构的内部体积设定的量被注入和填充在封闭的截面结构中。

公开(公告)号：US06731171B2

公开(公告)日：2004-05-04

申请号：US10080558

申请日：2002-02-25

申请人： Kiichi Yamashita

发明人： Kiichi Yamashita

IPC分类号： H03G330

CPC分类号： H03F3/3435 ,  H03F1/301 ,  H03F1/302 ,  H03F3/189 ,  H03F3/345

摘要： A power amplifier module includes a bias circuit to produce an idling current and a power amplifier of which the gain is controlled by the idling current produced by the bias circuit. Effects of changes of control voltage and ambient temperature of the power amplifier module can be removed by a first detector in the bias circuit to detect changes of the control voltage and a second detector in the bias circuit to detect changes of the ambient temperature. The bias circuit may further include a differential circuit to make error amplification with the first detector provided to perform as a standard voltage source for ambient temperature detection of the second detector and the second detector provided to perform as a standard voltage source for control-voltage detection of the first detector. Thus, they serve as detection circuits or standard voltage sources mutually.

摘要翻译： 功率放大器模块包括产生怠速电流的偏置电路和由偏置电路产生的空载电流来控制增益的功率放大器。 功率放大器模块的控制电压和环境温度的变化的影响可以通过偏置电路中的第一检测器去除，以检测控制电压的变化和偏置电路中的第二检测器，以检测环境温度的变化。 偏置电路还可以包括差分电路，以便利用第一检测器进行误差放大，以提供作为用于第二检测器和第二检测器的环境温度检测的标准电压源，所述第二检测器被提供用于执行用于控制电压检测的标准电压源 的第一个检测器。 因此，它们用作检测电路或标准电压源。

公开(公告)号：US20090161329A1

公开(公告)日：2009-06-25

申请号：US12394421

申请日：2009-02-27

申请人： Iwamichi Kohjiro ,  Yasuhiro Nunogawa ,  Sakae Kikuchi ,  Shizuo Kondo ,  Tetsuaki Adachi ,  Osamu Kagaya ,  Kenji Sekine ,  Eiichi Hase ,  Kiichi Yamashita

发明人： Iwamichi Kohjiro ,  Yasuhiro Nunogawa ,  Sakae Kikuchi ,  Shizuo Kondo ,  Tetsuaki Adachi ,  Osamu Kagaya ,  Kenji Sekine ,  Eiichi Hase ,  Kiichi Yamashita

IPC分类号： H01L23/66

CPC分类号： H01L25/16 ,  H01L23/49844 ,  H01L23/552 ,  H01L23/645 ,  H01L23/66 ,  H01L24/06 ,  H01L24/48 ,  H01L24/49 ,  H01L2223/6611 ,  H01L2223/6644 ,  H01L2224/05554 ,  H01L2224/05599 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48799 ,  H01L2224/49113 ,  H01L2224/49175 ,  H01L2224/49433 ,  H01L2224/85399 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01078 ,  H01L2924/01082 ,  H01L2924/09701 ,  H01L2924/10161 ,  H01L2924/10253 ,  H01L2924/1305 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/15153 ,  H01L2924/1517 ,  H01L2924/19105 ,  H01L2924/19107 ,  H01L2924/30107 ,  H01L2924/3025 ,  H03F1/56 ,  H03F3/195 ,  H03F3/213 ,  H03F3/604 ,  H03F2200/12 ,  H03F2200/168 ,  H03F2200/222 ,  H03F2200/318 ,  H03F2200/387 ,  H03F2200/408 ,  H03F2200/451 ,  H03H7/383 ,  H01L2924/00 ,  H01L2224/45099

摘要： In a semiconductor device such as a high-frequency power amplifier module, a plurality of amplifying means are formed on a semiconductor chip which is mounted on a main surface of a wiring substrate, and electrodes of the semiconductor chip are electrically connected by wires to electrodes of the wiring substrate. In order to make the high-frequency power amplifier module small in size, a substrate-side bonding electrode electrically connected to a wire set at a fixed reference electric potential is place at a location farther from a side of the semiconductor chip than a substrate-side output electrode electrically connected to an output wire. A substrate-side input electrode electrically connected to an input wire is located at a distance from the side of the semiconductor chip about equal to the distance from the side of the semiconductor chip to the substrate-side output electrode, or at a location farther from the side of the semiconductor chip than the substrate-side bonding electrode is.

摘要翻译： 在诸如高频功率放大器模块的半导体器件中，在安装在布线基板的主表面上的半导体芯片上形成多个放大装置，并且半导体芯片的电极通过导线电连接到电极 的布线基板。 为了使高频功率放大器模块尺寸变小，将电连接到固定基准电位的导线的基板侧接合电极位于距离半导体芯片的一侧更靠近基板侧接合电极的位置， 电连接到输出线。 电连接到输入线的基板侧输入电极位于距离半导体芯片侧的距离大约等于从半导体芯片的侧面到基板侧输出电极的距离处，或者位于距离半导体芯片 半导体芯片的侧面比基板侧接合电极为止。

公开(公告)号：US20070001300A1

公开(公告)日：2007-01-04

申请号：US11451579

申请日：2006-06-13

申请人： Iwamichi Kohjiro ,  Yasuhiro Nunogawa ,  Sakae Kikuchi ,  Shizuo Kondo ,  Tetsuaki Adachi ,  Osamu Kagaya ,  Kenji Sekine ,  Eiichi Hase ,  Kiichi Yamashita

发明人： Iwamichi Kohjiro ,  Yasuhiro Nunogawa ,  Sakae Kikuchi ,  Shizuo Kondo ,  Tetsuaki Adachi ,  Osamu Kagaya ,  Kenji Sekine ,  Eiichi Hase ,  Kiichi Yamashita

IPC分类号： H01L23/34

CPC分类号： H01L24/06 ,  H01L23/04 ,  H01L23/49805 ,  H01L23/49822 ,  H01L23/49838 ,  H01L23/49844 ,  H01L23/552 ,  H01L23/645 ,  H01L23/66 ,  H01L24/48 ,  H01L24/49 ,  H01L25/16 ,  H01L2223/6611 ,  H01L2223/6627 ,  H01L2223/6644 ,  H01L2223/6655 ,  H01L2224/05553 ,  H01L2224/05554 ,  H01L2224/05599 ,  H01L2224/45139 ,  H01L2224/45147 ,  H01L2224/4554 ,  H01L2224/45669 ,  H01L2224/48011 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/484 ,  H01L2224/48799 ,  H01L2224/49111 ,  H01L2224/49113 ,  H01L2224/4912 ,  H01L2224/49175 ,  H01L2224/49433 ,  H01L2224/73265 ,  H01L2224/85399 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01021 ,  H01L2924/01023 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01047 ,  H01L2924/01051 ,  H01L2924/01078 ,  H01L2924/09701 ,  H01L2924/10161 ,  H01L2924/10253 ,  H01L2924/1305 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/15153 ,  H01L2924/1517 ,  H01L2924/15173 ,  H01L2924/15313 ,  H01L2924/15787 ,  H01L2924/16152 ,  H01L2924/19032 ,  H01L2924/19105 ,  H01L2924/19107 ,  H01L2924/30107 ,  H01L2924/3011 ,  H01L2924/3025 ,  H03F1/56 ,  H03F3/195 ,  H03F3/213 ,  H03F3/604 ,  H03F2200/12 ,  H03F2200/168 ,  H03F2200/222 ,  H03F2200/255 ,  H03F2200/318 ,  H03F2200/387 ,  H03F2200/408 ,  H03F2200/411 ,  H03F2200/423 ,  H03F2200/451 ,  H03F2200/543 ,  H03H7/383 ,  H05K1/0243 ,  H05K1/0298 ,  H05K1/183 ,  H05K3/403 ,  H01L2924/05432 ,  H01L2924/2065 ,  H01L2224/45099 ,  H01L2924/00

摘要： In a semiconductor device such as a high-frequency power amplifier module, a plurality of amplifying means are formed on a semiconductor chip which is mounted on a main surface of a wiring substrate, and electrodes of the semiconductor chip are electrically connected by wires to electrodes of the wiring substrate. In order to make the high-frequency power amplifier module small in size, a substrate-side bonding electrode electrically connected to a wire set at a fixed reference electric potential is place at a location farther from a side of the semiconductor chip than a substrate-side output electrode electrically connected to an output wire. A substrate-side input electrode electrically connected to an input wire is located at a distance from the side of the semiconductor chip about equal to the distance from the side of the semiconductor chip to the substrate-side output electrode, or at a location farther from the side of the semiconductor chip than the substrate-side bonding electrode is.

摘要翻译： 在诸如高频功率放大器模块的半导体器件中，在安装在布线基板的主表面上的半导体芯片上形成多个放大装置，并且半导体芯片的电极通过导线电连接到电极 的布线基板。 为了使高频功率放大器模块尺寸变小，将电连接到固定基准电位的导线的基板侧接合电极位于距离半导体芯片的一侧更靠近基板侧接合电极的位置， 电连接到输出线。 电连接到输入线的基板侧输入电极位于距离半导体芯片侧的距离大约等于从半导体芯片的侧面到基板侧输出电极的距离处，或者位于距离半导体芯片 半导体芯片的侧面比基板侧接合电极为止。

公开(公告)号：US20060028277A1

公开(公告)日：2006-02-09

申请号：US11247185

申请日：2005-10-12

申请人： Kiichi Yamashita ,  Tomonori Tanoue ,  Shizuo Kondo

发明人： Kiichi Yamashita ,  Tomonori Tanoue ,  Shizuo Kondo

IPC分类号： H03G3/10

CPC分类号： H03F1/02 ,  H03F1/30 ,  H03F3/21 ,  H03G7/001 ,  H03G7/06

摘要： The present invention provides a power amplifier module featuring that: its output power characteristic smoothly changes as the input control Voltage changes; and its control sensitivity is stable over a wide dynamic range. By same means, idling current for gain setting is supplied to a single amplifier element or all of multiple stages of amplifier elements of the power amplifier module. By making this idling current behave so as to exponentially change, relative to input control voltage, the invention enables output power control proportional to the input control voltage.

摘要翻译： 本发明提供了一种功率放大器模块，其特征在于：其输出功率特性随着输入控制电压的变化而平滑地变化; 其控制灵敏度在宽动态范围内稳定。 通过同样的方式，用于增益设定的空载电流被提供给功率放大器模块的单个放大器元件或放大器元件的多个级的全部。 通过使该怠速电流相对于输入控制电压发生指数变化，本发明实现与输入控制电压成比例的输出功率控制。

公开(公告)号：US06952565B1

公开(公告)日：2005-10-04

申请号：US10110345

申请日：1999-10-13

申请人： Eriko Takeda ,  Kiichi Yamashita ,  Kenji Sekine ,  Ken Takei

发明人： Eriko Takeda ,  Kiichi Yamashita ,  Kenji Sekine ,  Ken Takei

IPC分类号： H04B1/3822 ,  H04B1/40

CPC分类号： H04B1/40

摘要： The present invention provides a communication terminal that enables precise communications with optimum receive sensitivity at any time regardless of any change in peripheral environments of an antenna thereof. The communication terminal including means for transmitting and receiving radio waves is provided with a training mechanism for enabling the communication terminal itself to conduct training mode for tuning receive sensitivity, and switching mechanism for switching between normal communication mode and the training mode. The communication terminal is particularly useful as a communication terminal for automobile in the Intelligent Transport System or the like.

摘要翻译： 本发明提供了一种通信终端，其能够在任何时候实现具有最佳接收灵敏度的精确通信，而不管其天线的外围环境如何变化。 通信终端包括用于发送和接收无线电波的装置，设置有用于使通信终端本身能够进行用于调整接收灵敏度的训练模式的训练机制，以及用于在正常通信模式和训练模式之间切换的切换机制。 通信终端在智能交通系统等中作为汽车的通信终端特别有用。

公开(公告)号：US06816017B2

公开(公告)日：2004-11-09

申请号：US09931877

申请日：2001-08-20

申请人： Kiichi Yamashita ,  Tomonori Tanoue ,  Isao Ohbu ,  Kenji Sekine

发明人： Kiichi Yamashita ,  Tomonori Tanoue ,  Isao Ohbu ,  Kenji Sekine

IPC分类号： H03F152

CPC分类号： H03F3/19 ,  H03F1/0261 ,  H03F1/302 ,  H03F3/347 ,  H03F2200/444

摘要： A power amplifier module is provided with a function of protecting an amplifying device against destruction caused by a standing wave by reflection from an antenna end in load variation. Increase in base current from idling current of a final stage amplifying portion GaAs-HBT in load variation is detected and canceled and collector current is restrained to thereby prevent an increase in output and prevent destruction of GaAs-RET. By also using a function of successively lowering idling current when power source voltage is elevated and a clipping function of diodes connected in parallel with output stage GaAs-RET, voltage as well as current more than necessary are avoided from being applied on the output stage GaAs-RET.

摘要翻译： 功率放大器模块具有保护放大装置的功能，以防止由负载变化引起的天线反射引起的驻波的破坏。 检测并抵消了负载变化中的最终级放大部分GaAs-HBT的空载电流的基极电流的增加，并抑制集电极电流，从而防止输出增加并防止GaAs-RET的破坏。 通过使用在电源电压升高时连续降低空载电流并且与输出级GaAs-RET并联连接的二极管的限幅功能也被避免施加在输出级GaAs上的功能。 -RET。