发明申请
- 专利标题： PRODUCTION METHOD FOR SEMICONDUCTOR DEVICE AND SUBSTRATE PROCESSING APPARATUS
- 专利标题（中）： 半导体器件和衬底加工设备的生产方法
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申请号： US12788697申请日： 2010-05-27
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公开(公告)号： US20100233887A1公开(公告)日： 2010-09-16
- 发明人: Hironobu Miya , Kazuyuki Toyoda , Norikazu Mizuno , Taketoshi Sato , Masanori Sakai , Masayuki Asai , Kazuyuki Okuda , Hideki Horita
- 申请人： Hironobu Miya , Kazuyuki Toyoda , Norikazu Mizuno , Taketoshi Sato , Masanori Sakai , Masayuki Asai , Kazuyuki Okuda , Hideki Horita
- 申请人地址： JP Tokyo
- 专利权人： HITACHI KOKUSAI ELECTRIC INC.
- 当前专利权人： HITACHI KOKUSAI ELECTRIC INC.
- 当前专利权人地址： JP Tokyo
- 优先权： JP2005-040501 20050217
- 主分类号： H01L21/314
- IPC分类号： H01L21/314 ; H01L21/316 ; H01L21/318
摘要：
A production method for a semiconductor device comprising the first step of supplying a first reaction material to a substrate housed in a processing chamber to subject to a ligand substitution reaction a ligand as a reaction site existing on the surface of the substrate and the ligand of the first reaction material, the second step of removing the excessive first reaction material from the processing chamber, the third step of supplying a second reaction material to the substrate to subject a ligand substituted by the first step to a ligand substitution reaction with respect to a reaction site, the fourth step of removing the excessive second reaction material from the processing chamber, and a fifth step of supplying a third reaction material excited by plasma to the substrate to subject a ligand, not subjected to a substitution reaction with respect to a reaction site in the third step, to a ligand substitution reaction with respect to a reaction site, wherein the steps 1-5 are repeated a specified number of times until a film of a desired thickness is formed on the substrate surface.
公开/授权文献
- US08039404B2 Production method for semiconductor device 公开/授权日：2011-10-18
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